• Corrosion Science and Technology
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• v.5 no.4
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• pp.137-140
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• 2006

The effect of pre-existing barrier-type film on porous aluminum oxide film formation during anodization was investigated to control the uniform film growth rate. Initial potential fluctuations during anodization indicated that the breakdown of barrier-film is preceded before the porous formation and the induction time for the porous film growth increases with the increases of pre-existing film thickness. The porous film growth mechanism is lot affected by the presence of barrier film on aluminum surface. In parallel, uniform growth of barrier film underneath the porous structure was attained by two-step anodization processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.447-450
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• 1995

Using Boltzmaan equation by introducing the potential barrier scattering which buit by Hall-effect, a possible origin of giant magnetoresistance in multilayers is proposed. The calculated results may be well explain the giant magnetoresistance observed in multilayers.

• Bulletin of the Korean Chemical Society
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• v.32 no.2
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• pp.510-514
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• 2011

Photodissociation dynamics of allyl alcohol ($H_2C$=CH-$CH_2OH$) has been investigated at 205 - 213 nm along the UV absorption band by measuring rotationally-resolved laser-induced fluorescence spectra of OH radicals. Observed energy partitioning of the available energy among products at all photon energies investigated was similar and the barrier energy for OH production is about 574.7 kJ/mol from the OH yield measurements. The potential energy surfaces for the $S_0$, $T_1$, and $S_1$ excited states along the dissociation coordinate were obtained by ab initio quantum chemical calculations. The observed energy partitioning was successfully modeled by the "barrier-impulsive model" with the reverse barrier and the geometry obtained by the calculated potential energy surfaces. The dissociation takes place on the $T_1$ excited state potential energy surface with an energy barrier in the exit channel and a large portion of the photon energy is distributed in the internal degrees of freedom of the polyatomic products.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.188-196
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• 1998

The sensing and electrical characteristics of $WO_{3}$-based n-type semiconductor gas sensors are investigated. In normal air condition, $TiO_{2}$(4 wt. %)-doped $WO_{3}$-based sensor fabricated without any binder shows the grain boundary ( GB ) potential barrier height of 0.26 V. Sensors fabricated with alumina, PVA and silica sol binders show 0.17, 0.22 and 0.26 V of GB potential barrier height, respectively. In the ambience of 120 ppm $NO_{x}$ concentration, the GB potential barrier height of the sensor fablicated without binder is increased to 0.59 V. The sensors were fabricated with alumina, PVA, silica sol binders show 0.43, 0.66 and 0.52 V of potential barrier, respectively. Thus the variation of the potential barrier at GB is largest in the sensor fabricated with the PVA binder. This is found to be the main reason why the sensor fabricated with the PVA binder shows the best sensitivity. It is also found that the decrease of sensitivity at a temperature higher than the optimum operation temperature is due to the temperature dependence of the sensor resistance in normal air condition rather than the desorption of the adsorbed $NO_{x}$ gas particles. In the ambience of 250 ppm CO concentration, the GB potential barrier heights of the sensors fabricated without binder and with PVA binder are about 0.2 V showing negligible change compared to the case of normal air ambience. This fact indicates that these sensors are good candidates for the selective detection of $NO_{x}$ gas in the mixture of CO and $NO_{x}$ gases.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.37-42
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• 1998

The barrier heights and carrier densities of ZnO varistors with various compositions were estimated using C-V, J-V and $\rho$-T relations. The barrier heights obtained from C-V and J-V plots were 0.73~5.98 eV and 0.25~2.70 eV, respectively. The carrier densities estimated from C-V plots were ~$10^{18}cm^{-3}$. Acceptable values of the barrier heights and the carrier densities were obtained from $\rho$-1/T curves and the capacitances at zero bias; 0.6~0.8 eV for the barrier heights and ~$10^{17}cm^{-3}$ for carrier densities. Addition of cobalt increased the barrier height and the carrier density, while chromium slightly lowered both of them.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1275-1281
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• 1997

ZnO varistors containing 5.0 at% Co3O4 and Pr6O11, ranging from 0.1 to 1.0 at%, were sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$. The I-V characteristics and nonlinear coefficients of the specimens were investigated with respect to Pr addition and sintering temperature. In general the specimens sintered at 130$0^{\circ}C$ showed better varistor characteristic than those fired at 135$0^{\circ}C$, which seemed to be related with the liquid phase formation during sintering. The barrier heights obtained from C-V relations, 0.29-1.36 eV, were different from those acquired using resistivity-temperature plots measured at low voltage per grain boundary. Therefore the estimation of potential barrier heights using C-V relations is better suited for the specimens prepared in this study. The carrier densities obtained using C-V relations were ~1018 cm-3.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.29-31
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• 2019

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.338-343
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• 2010

As an alternative to the W plug used in MOSFETs, a Cu plug with a NiSi contact using Ta / TaN as a diffusion barrier is currently being considered. Conventionally, Ni was first deposited and then NiSi was formed, followed by the barrier and Cu deposition. In this study, Ti was employed as a barrier material and simultaneous formation of the NiSi contact and Cu plug / Ti barrier was attempted. Cu(100 nm) / Ti / Ni(20 nm) with varying Ti thicknesses were deposited on a Si substrate and annealed at $4000^{\circ}C$ for 30 min. For comparison, Cu/Ti/NiSi thin films were also formed by the conventional method. Optical Microscopy (OM), Scanning Probe Microscopy (SPM), X-Ray Diffractometry (XRD), and Auger Electron Microscopy (AES) analysis were performed to characterize the inter-diffusion properties. For a Ti interlayer thicker than 50 nm, the NiSi formation was incomplete, although Cu diffusion was inhibited by the Ti barrier. For a Ti thickness of 20 nm and less, an almost stoichiometric NiSi contact along with the Cu plug and Ti barrier layers was formed. The results were comparable to that formed by the conventional method and showed that this alternative process has potential as a formation process for the Cu plug/Ti barrier/NiSi contact system.