• Archives of Pharmacal Research
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• v.22 no.2
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• pp.165-172
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• 1999

In the present work , the transport mechanism of a capsaicin derivative, DA-5018, through blood-brain barrier (BBB) has been investigated to evaluate the feasibility of potential drug development. The result of pharmacokinetic parameters obtained from the intravenous injection of plasma volume marker,$[3^H]RSA$ and $[{14}^C]DA-5018$, indicated that both AUC, area under the plasma concentration curve and VD, volume of distribution in brain of $[3^H]RSA$ agreed with those reported ($1620{\pm}10 $percentage injected dose minute per milliliter (%IDmin/ml) and $12.0{\pm}0.1{\mu}l/g$, respectively). Elimination half-life and AUC of $[{14}^C]DA-5018$is corrected by the PHLC analysis, 19.6$\pm$1.2 min and 7.69$\pm$0.85% IDmin/ml, respectively. The metabolic rate of $[{14}^C]DA-5018$was very rapid. The blood-brain barrier permeability surface area (PS) product of $[{14}^C]DA-5018$ was calculated to be 0.24$\pm$0.05 $\mu$l/min/g. The result of internal carotid artery perfusion and capillary depletion suggested that [14C]DA-5018 pass through BBB with the time increasingly. Investigation of transport mechanism of $[{14}^C]DA-5018$ using agonist and antagonist suggested that vanilloid (capsaicin) receptor did not exist in the BBB, and nutrient carrier system in the BBB has no effect on the transport of DA-5018. In conclusion, despite the fact that penetration of DA-5018 through BBB is significant, the intact drug found in the brain tissue is small because of a rapid metabolism. Therefore, for the central analgesic effect of DA-5018, the method to increase the metabolic stability in plasma and the brain permeability should be considered.

• Asian-Australasian Journal of Animal Sciences
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• v.16 no.4
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• pp.596-608
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• 2003

Weaning is a complex phase when the mammal suffers the action of different stressors that contribute to negatively affect the efficiency of the intestinal mucosa and of the whole local integrated system, that acts as barrier against any nocuous agent. The components of this barrier are mechanical, chemical, and bacteriological; immunological and not. The development of contact with a saprophyte microflora and the maintenance of feed intake after the interruption of motherly nutrition are essential for the maturation of an equilibrated local immune function and for a functional integrity of villi. Opportunities and limits of some dietary strategies that can contribute to reduce negative effects of weaning on health and performance are discussed. Knowledges on the possible mechanism of action of probiotics are upgraded, particularly for their supposed role in the balance between different immune functions (effectory/regulatory). Some tools to control pathogen microflora are reviewed (acids, herbs, immunoglobulin sources) and practical feeding systems are proposed.

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2675-2678
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• 2012

Studies on niobium anodization in the mixture of 1 M $H_3PO_4$ and 1 wt % HF at galvanostatic anodization are described here in detail. Interestingly, duplex niobium oxide consisting of thick barrier oxide and correspondingly thick porous oxide was prepared at a constant current density of higher than 0.3 $mAcm^{-2}$, whereas simple porous type oxide was formed at a current density of lower than 0.3 $mAcm^{-2}$. In addition, simple barrier or porous type oxide was obtained by galvanostatic anodization at a single electrolyte of either 1 M $H_3PO_4$ or 1 wt % HF, respectively. The formation mechanism of duplex type structures was ascribed to different forming voltages required for moving anions.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2001.10a
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• pp.26-31
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• 2001

Recently, miniaturization and mass production are the main trends in manufacturing fields. Therefore, ultraprecision machining and MEMS technology have been taken more and more important position in machining of microparts. Micro endmilling is one of the prominent technology that has wide spectrum of application field ranging from macro parts to micro products, such as PDP and IT components, in precision products manufacturing. However, the deburring is significant problem in making smooth and precise parts in micro endmilling. This paper shows removal characteristics of burr generated by micro endmilling process. Additionally, it is necessary to understand the formation mechanism of burr of micro barrier ribs to find proper deburring method.

• Journal of Korean Society for Atmospheric Environment
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• v.18 no.3
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• pp.173-182
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• 2002

We investigated the effects of operating variables, such as electrical. reactor and gas parameters on toluene removal and discharge property in the dielectric barrier discharge (DBD) process. The toluene removal was initiated with the energy transfer to the reactor by loading of voltages higher than the discharge onset value. The energy transfer and toluene removal increased with the applied voltage. Higher removal rate was observed with smooth surface electrode despite of lower energy transfer compared with the coarse electrode, because more uniform discharge can be obtained on smooth surface state. The decrease of dielectric material thickness enhanced the removal efficiency by increasing the discharge potential. The toluene removal efficiency decreased with the increase of the inlet concentration. The increase of gas retention time enhanced the removal efficiency by the increase of energy density. The oxygen and humidity contents seem to exert significant influences on the toluene removal by dominating the generation of electrons, ions, and radicals which are key factors in the removal mechanism.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.141-146
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• 2002

The effect of the wide-bandgap Schottky barrier enhancement cap layer on the performance of metal-semiconductor-metal photodetectors (MSMPD's) is presented. Judged by the dc characteristics, no considerable increase in recombination loss of carriers is resulted by the incorporation of the cap layer. However, about 45% of the detection efficiency is lost for the cap-layered MSMPD's even with a graded layer incorporated under pulse operation, and it was found to be due mainly to the capturing and slow release of the photocarriers at the heterointerface. The loss mechanism of the pulse detection efficiency is believed to be responsible for the intersymbol interference and the increased bit-error-rate (BER) observed in MSMPD's when used with a high bit rate pseudo-random-bit-stream (PRBS) data pattern.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.57-63
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• 2011

Dielectric Barrier Discharge (DBD) reactor with sinsodual AC type of power supply is very widely adopted for its compact size and effective discharging mechanism to generate high density of ozone radicals. However, at the aspect of design on power supply, its optimal switching conditions and topology is achieved by empirical test. Therefore, throughout this paper, it is proposed a design method of DBD power supply to guarantee a maximum ozone yield rate in accordance with DBD reactor modification and impedance variation when rapid gas discharging in the DBD reactor is proceeded.

• Journal of the Korean Society of Industry Convergence
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• v.7 no.1
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• pp.115-120
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• 2004

An indoor air cleaner consisting of a dielectric barrier discharge system and an electrostatic precipitator (ESP) was experimentally investigated. The function of the dielectric barrier discharge is to precharge particles by producing nonthermal plasma before indoor air enters ESP, leading to an enhancement in dust collection efficiency. The dependence of particle size distribution on the plasma discharge was examined to understand the mechanism of the particle precharging. The plasma discharge was found to increase the electrical force of the particles, rather than agglomerate them. Coarse particles in the range of 0.5 to $5.0{\mu}m$ were observed to be easily collected by this indoor air cleaner, and the present study laid emphasis on the removal of fine particles of $0.3{\mu}m$. The collection efficiency of the fine particles was largely enhanced by the plasma discharge.

• International Journal of Advanced Culture Technology
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• v.8 no.2
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• pp.283-288
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• 2020

This study investigated the purification process of groundwater contaminated with zinc and arsenic using a permeable reactive barrier with a zero-valent iron/pumice mixture. We determined the removal rates of the contaminants for 30 days. In this study, column reactor filled with the zero-valent iron/pumice reactive mixture was used. Experimental results showed that the mixture exhibited an almost complete removal of the zinc and arsenic ions. Arsenic was removed via co-precipitation and adsorption processes while zinc ions were asorbed in active sites.The purification process of water from the metal ionscontinued for 30 days with constant hydraulic conductivity because of the enhanced porosity of the pumice and interparticle distance between the zero-valent iron and pumice. Contaminants removal rates and the remediation mechanism for each reactive system are described in this paper.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.45-49
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• 2007

The analytical transport model in subthreshold regime for double gate MOSFET has been presented to analyze the short channel effects such as subthreshold swing, threshold voltage roll-off and drain induced barrier lowering. The present approach includes the quantum tunneling of carriers through the source-drain barrier. Poisson equation is used for modeling thermionic emission current, and Wentzel-Kramers-Brillouin approximations are applied for modeling quantum tunneling current. This model has been used to investigate the subthreshold operations of double gate MOSFET having the gate length of the nanometer range with ultra thin gate oxide and channel thickness under sub-20nm. Compared with results of two dimensional numerical simulations, the results in this study show good agreements with those for subthreshold swing and threshold voltage roll-off. Note the short channel effects degrade due to quantum tunneling, especially in the gate length of below 10nm, and DGMOSFETs have to be very strictly designed in the regime of below 10nm gate length since quantum tunneling becomes the main transport mechanism in the subthreshold region.