• 반도체디스플레이기술학회지
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• 제5권3호
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• pp.33-36
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• 2006

To produce a fine structure with uniform surface of barrier ribs in PDP, acid etching process has been used in manufacture process. It is necessary to understand the mechanism of etching, particularly on the interface of ceramic fillers and matrix glass. We investigated the effect of ceramic fillers (ZnO, $Al_2O_3$) on the microstructure of borate glass system to find an etching mechanism of barrier ribs. The barrier ribs was etched with several steps, dissolving a small amount of residual glass, taking out alumina fillers, and removing a cluster type of ZnO fillers and glass matrix.

• Wind and Structures
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• 제38권6호
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• pp.411-425
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• 2024

To investigate the optimal aerodynamic parameters of wind barriers for the T-beam of high-speed railway (HSR) bridge and the wind field of the wind barrier-train-bridge system, the three-component forces of the system and the wind pressure on the vehicle surface were tested and analyzed through the sectional model wind test. The effects of wind velocity, with/without wind barrier, the height of wind barrier, and the air permeability of the wind barrier on the aerodynamic characteristics of the train-bridge system are discussed. Additionally, a CFD numerical model is constructed to evaluate the wind environment of the bridge surface with/without the wind barrier, and the impact of wind barrier on the running safety of vehicles are analyzed. Comprehensively considering the running safety of the train and the wind-resistant stability of the bridge, it is more appropriate to set the wind barrier height H as 3.5 m and the porosity 𝛽 as 30% respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
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• pp.18-18
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• 1997

• 한국세라믹학회지
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• 제30권10호
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• pp.819-822
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• 1993

The purpose of this paper is a investigation of sensing mechanism for the carbon monoxide gas in CuO infiltrated ZnO ceramics. Potential barriers between CuO and ZnO can explain the selective sensing of carbon monoxide gas in the physically contacted CuO/ZnO ceramics. A specimen having no potential barrier between CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO and ZnO was prepared to see whether the gas sensing mechanism is related to the potential barrier. CuO was painted on the non electrode sides of ZnO ceramics. The CuO painted ZnO ceramics showed that the sensitivityfor the carbon moxnoxide gas was 1.3 times as high as that for the hydrogen gas. It is almost same gas sensitivity as that of the CuO infiltrated ZnO ceramics.

• 한국정보통신학회논문지
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• 제10권8호
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• pp.1414-1421
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• 2006

본 논문에서는 VOD에서 스트리밍 데이터를 효율적으로 서비스할 수 있는 Consistency 알고리즘을 제시한다. 미디어 데이터 서비스를 위해 우선 하나의 미디어 데이터를 라운드 로빈 방식으로 스트라이핑하여 각 호스트의 저장 노드에 저장한다. 본 논문에서는 일반적인 계산 용도로 사용되는 barrier 메커니즘을 미디어 플레이 최소 단위인 (SH, GOP) 미디어 데이터에 서비스할 수 있도록 제시하였다. 데이타 처리 방식은 하나의 호스트에 한 프래그먼트 크기의 공유메모리를 할당한다. 이 공유메모리 는 barrier 메커니즘을 통하여 RTP패킷 전송 단위로 결정될 프래그먼트 데이터의 조합을 형성한다. 본 논문에서 제시한 알고리즘에 대해서 실험을 수행하기 위해서 VOD 시스템에서 프로그램을 작성하였다.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.36.1-36.1
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• 2009

OLED(organic light emitting diode)는 차세대 평판 디스플레이로 전자종이, 입는 디스플레이 등 flexible한 디스플레이로도 주목받고 있다. 하지만, OLED의 가장 큰 단점 중의 하나가 수분과 산소에 매우 민감하다는 것으로 이것은 OLED의 lifetime과 연결된다. 따라서 이에 대한 mechanism의 확립이 필요하다. 따라서 본 연구에서는, flexible한 OLED에 적용되는 금속 코팅막의 적층구조 및 기판의 노출온도에 따른 금속 코팅막의 수분침투 특성에 대해 MOCON의 weight gain test (WGT)를 통해 barrier layer에 대해 평가하고 이에 대한 mechanism을 확립하는데 그 목적이 있다. 금속 코팅막은 OLED의 cathode와 anode 재료로 많이 사용되는 Al과 ITO를 sputter장비를 이용해 single layer와 multi-layer의 두 가지 구조로 PET기판에 증착하였다. 또한, 노출온도에 따른 특성을 알아보고자 bare PET / ITO coated PET(single layer $50{\mu}m$) / Al coated PET(single layer $200{\mu}m$)의 세 가지 시편을 제작하였다. 이 시편을 각각 $25^{\circ}C$, $37.8^{\circ}C$, $50^{\circ}C$의 온도에서 test를 진행하였고 이 과정을 100%RH, 70%RH, 40%RH조건의 수분조건에서 진행하여 각각의 수분조건에서 각각의 온도에 따른 금속 코팅막의 수분침투 특성에 대한 mechanism을 확립하였다. 적층구조에 따른 수분침투 특성 평가 결과 multi-layer가 single layer보다 더 우수한 수분침투의 barrier 특성을 나타냈었다. 그리고 각 온도에 따른 test결과 온도가 증가할수록 barrier의 특성이 나빠짐이 보였다.

• 한국도로학회:학술대회논문집
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• 한국도로학회 2004년도 학술발표회 논문집
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• pp.421-428
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• 2004

• 한국자동차공학회논문집
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• 제24권2호
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• pp.191-197
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• 2016

RCAR low speed impact test estimates repair cost of the impacted vehicle. In this study, for a mid-size vehicle front body model, structural performance for RCAR low speed impact were analyzed with changing the bumper stay shape and size. First, for improving the impact load transfer mechanism to side member the stay rear section shape at connecting area with side member was modified and the stay outer was redesigned to be normal to the barrier. Next, the investigation on stay thickness effect was carried out and the performances of several models with different forming shape were compared. The final design showed 13mm decrease in the maximum barrier intrusion distance and greatly reduced side member deformation. Additional analyses explained the validity of the final design.

• Journal of information and communication convergence engineering
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• 제16권4호
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• pp.248-251
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• 2018

To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.