• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.113-113
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• 2011

알루미늄 박막 커패시터 제작을 위해 선택적인 알루미늄 etching과 anodizing을 이용한 유전체($Al_2O_3$) 형성, 전극층 형성을 위한 무전해 Ni-P 도금을 진행하였다. $5{\mu}m$ patterns/$10{\mu}m$ space를 가지는 dot patterns을 알루미늄 기판에 patterning하고, 이를 각각의 전류밀도 조건에서 etching한 후, barrier type anodizing을 진행하였다. 유전체에 전극층은 무전해 Ni-P 도금을 통해 형성하였으며, 이렇게 제작된 알루미늄 박막 커패시터 특성을 평가하였다.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.193-195
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• 1988

The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.988-990
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• 2003

A plastic substrate for flexible display is developed. The developed PES film has good resistance to heat, low intrinsic birefringence, and mechanical stability. The gas barrier property in the substrate is improved through depositing organic and inorganic multi layer on plastic film by PVD and CVD process.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.746-749
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• 2002

Aluminum oxide thin films were grown on a poly ethylene naphthalate (PEN) substrate at the temperature of 100$^{\circ}C$ using atomic layer deposition method. The film showed very flat morphology and good adhesion to the substrate. The visible spectrum showed higher transmittance in the range from 400 nm to 800 nm than that of PEN. The water vapor transmission value measured with MOCON for 230nm oxide-deposited PEN was 0.62g/$m^2$/day @ 38$^{\circ}C$, while that of PEN substrate was 1.4g/$m^2$/day @ 38$^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.938-940
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• 1999

We have fabricated SiC Schottky diode for high temperature applications. SiC thin film for drift region has been deposited by ICP-CVD. In order to establish metallization conditions, we have extracted the device parameters of the Schottky diode from the forward I-V characteristics and the C-V characteristics as a function of temperature. The ideality factor was varied from 2.07 to 1.15 and the barrier height was also varied from 1.26eV to 1.92eV with increase of temperature. The reverse blocking voltage was 183 V.

• Journal of the Korean Applied Science and Technology
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• v.17 no.4
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• pp.226-232
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• 2000

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, we have synthesized a polyamic acid(PAA), which is a precursor of the polyimide. To obtain the optimum conditions of polyamic acid alkylamine salt(PAAS) Langmuir-Blodgett(LB) film deposition, the ${\pi}-A$ isotherms were examined by varying subphase temperature, barrier moving speed and spreading amount of solution. Film formation was verified by measuring transfer ratio, absorption of UV/vis spectra and scanning electron microscope(SEM) images.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.23-25
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• 2018

With respect to the electrode structure and the discharge characteristics, the atmospheric pressure plasma sheet of a thin polyimide film is introduced in this study; here, the flexible plasma device of a dielectric-barrier discharge with the ground electrode and the high-voltage electrode formulated on each surface of a polyimide film whose thickness is approximately $100{\mu}m$, that is operated with a sinusoidal voltage at a frequency of 25 kHz and a low voltage from 1 kV to 2 kV is used. The streamer discharge is appeared along the cross-sectional boundary line between two electrodes at the ignition stage, and the plasma is diffused on the dielectric-layer surface over the high-voltage electrode. In the development of a plasma sheet with thin dielectric films, the avoidance of the insulation breakdown and the reduction of the leakage current have a direct influence on the low-voltage operation.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.583-585
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• 2000

This study reports the fluidic handling method using hydrophobic patterns inside PDMS microchannels. In order to obtain hydrophobic patterns, we pattern fluorcarbon(FC) film surfaces by lift-off process. FC films are deposited by spin coating method and plasma polymerization method. Hydrophobic surfaces are used as the barriers to control fluid flow. Injected liquid is spontaneously filled up inside PDMS-microchannels by the capillary action. Liquid flow stops when it meets hydrophobic regions which can be the barrier against fluid flow. Then, again, when liquid is pressurized externally, liquid can move toward another hydrophilic region by external air pressure. Contact angle analyses are performed on fluorocarbon films to estimate the wettability of film surfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.1-4
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• 2003

The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.571-574
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• 2009

Metal oxide/metal bilayer structures are explored as contacts with a low injection barrier in organic thin-film transistors (OTFTs) in an effort to realize their true potential for low-cost electronics. OTFTs with a bilayer electrode of $WO_3$ (10nm) and Al shows a saturation mobility as large as 0.97 $cm^2$/Vsec which are comparable to those of Au-based control samples (~0.90 $cm^2$/Vsec). Scaling of contact resistance with respect to the thickness of $WO_3$ layer is also discussed.