• 한국광학회지
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• 제16권2호
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• pp.159-161
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• 2005

We report the selective area bandgap tuning of multiple quantum well structures by an impurity free vacancy induced quantum well intermixing technique. A 3dB waveguide directional coupler was fabricated in the disordered section of an intermixed quantum well sample as a demonstration of photonic device applications.

• 한국재료학회지
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• 제33권4호
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• pp.164-174
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• 2023

The bandgap characteristics of semiconductor materials are an important factor when utilizing semiconductor materials for various applications. In this study, based on data provided by AFLOW (Automatic-FLOW for Materials Discovery), the bandgap of a semiconductor material was predicted using only the material's compositional features. The compositional features were generated using the python module of 'Pymatgen' and 'Matminer'. Pearson's correlation coefficients (PCC) between the compositional features were calculated and those with a correlation coefficient value larger than 0.95 were removed in order to avoid overfitting. The bandgap prediction performance was compared using the metrics of R² score and root-mean-squared error. By predicting the bandgap with randomforest and xgboost as representatives of the ensemble algorithm, it was found that xgboost gave better results after cross-validation and hyper-parameter tuning. To investigate the effect of compositional feature selection on the bandgap prediction of the machine learning model, the prediction performance was studied according to the number of features based on feature importance methods. It was found that there were no significant changes in prediction performance beyond the appropriate feature. Furthermore, artificial neural networks were employed to compare the prediction performance by adjusting the number of features guided by the PCC values, resulting in the best R² score of 0.811. By comparing and analyzing the bandgap distribution and prediction performance according to the material group containing specific elements (F, N, Yb, Eu, Zn, B, Si, Ge, Fe Al), various information for material design was obtained.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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• pp.413-422
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• 2002

A novel photonic bandgap(PBG) structure is proposed and measured for wide bandgap and compact circuit applications. The proposed structure realizes the ultra-wideband bandgap(2-octave) characteristics by superposing two different PBG structures into a coupled double-plane configuration. A low pass filter fabricated using 3-period of the PBG cells shows 2-octave 10 ㏈ stopband from 4.3 to 16.2 ㎓ and 0.2 ㏈ insertion loss in the passband. Moreover, we confirmed that 44∼70 % size reduction can be achieved using the proposed PBG structures. We expect this novel double-plane PBG structure is widely used for compact and wideband circuit applications, such as compact high-efficiency power amplifiers using harmonic tuning techniques.

• Bulletin of the Korean Chemical Society
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• 제28권10호
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• pp.1637-1638
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• 2007

• 한국통신학회논문지
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• 제27권5C호
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• pp.496-499
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• 2002

본 논문에서는 선형증폭기에 사용되는 가변 위상제어기를 PBG 천이격자를 이용해 설계 및 제작하였다. 주파수 대역은 향후 가입자 증대에 따른 증폭기의 선형성 요구에 대응하기 위해서 5.8GHz 무선랜 주파수 대역을 사용하였다. 기존 선형증폭기에 사용되는 가변 위상제어기는 혼합 형태를 가지고 있어서 선형증폭기의 부피증가 요소가 되었다. 본 논문에서 설계된 천이격자 PBG구조는 PBG구조 중 일부의 격자길이를 조절함으로써 최대 80o의 가변위상을 얻을 수 있었다. 제작된 천이격자 PBG구조는 상용되는 증폭기 신호제거 부분에 적용되어 주신호의 제거를 측정할 수 있었다.

• Advances in nano research
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• 제14권5호
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• pp.451-461
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• 2023

Two-dimensional (2D) materials have been attracting attention since graphene monolayer was firstly separated. However, after an explosive boom, there is always quandary and stagnancy following and soon will come the refractory period of capital market. To avoid that undesired future, a paradigm of quasi 2D monolayer has been contemplated and devised in this article, with examples studied theoretically. The results show the general dynamic nonlinearity, and the expected tunability of bandgap without extra doping or substitution. These together suggest its intriguing both electronical and mechanical properties, which will enrich the arsenal of potential 2D materials.

• Current Photovoltaic Research
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• 제11권3호
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• pp.67-74
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• 2023

The earth-abundant element-based Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (V_oc) and short circuit current density (J_sc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.

• 한국전자파학회논문지
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• 제12권7호
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• pp.1182-1190
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• 2001

본 논문에서는 마이크로스트립 선로상의 금속부분을 일부 제거한 형태의 Photonic bandgap (PBG) 구조의 특성을 분석하고 형태를 최적화 한 후 전력 증폭기에 적용하여 고조파 동조를 수행하였다. 이 구조는 제작 및 접지에서 타 구조에 비해 유리하다. PCB 제작 과정의 오차를 줄이기 위해 단위 격자의 크기를 수직방향으로 증가시키고, 테이퍼 선로를 이용하여 입출력을 50 $\Omega$으로 유지시켰다. EM 시뮬레이션으로 PBG 구조의 특성을 분석하고 설계하였으며, 최종적으로 통과대역 손실 0.3~0.4dB, 저지대역폭 6~7GHz의 특성을 얻었다. 전력 증폭기에 PBG구조를 적용한 후 출력 전력은 0.72~0.99dB, PAE는 1.14~7.8 %, 3차 IMD는 1 dBc 증가하는 결과를 얻을 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 D
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• pp.2579-2581
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• 2001

넓은 가변 범위를 가지는 LC 탱크 전압 제어 발진기에 관해 본 논문에서 소개하고자 한다. LC 탱크 전압 제어 발진기의 발진을 소멸시키는 밀러 증폭기의 ESR을 제거함으로써 넓은 가변 범위를 얻을 수 있다. LC 탱크 전압 제어 발진기는 발진기 코어와 버퍼, 밴드갭(bandgap) 기준 전압 발생기 그리고 드라이브 증폭기로 구성되어 있다. 발진기 코어는 1.3mA의 전류를 소모하고 약 1GHz의 가변 범위를 가진다. 출력주파수의 가변 범위내에 발진기의 출력 전력은 3dBm 이내로 변한다. 이러한 LC 탱크 전압 제어 발진기는 BiCMOS 공정을 이용하여 제작되었고 2.7V 단일 전원에서 31.5mW의 전력을 소모한다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2013년도 임시총회 및 하계학술연구발표회
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• pp.19-20
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• 2013

Thermoelectic properties of the typical thermoelectric host materials, the tellurides and selenides, are known to be noticeably changed by their volume change due to the strain [1]. In the bismuth telluride ($Bi_2Te_3$) crystal, a substitution of rare-earth element by replacing one of the Bi atoms may cause the change of the lattice parameters while remaining the rhombohedral structure of the host material. Using the first-principles approach by the precise full potential linearized augmented plane wave (FLAPW) method [2], we investigated the Ce substitution effect on the thermoelectric transport coefficients for the bismuth telluride, employing Boltzmann's equation in a constant relaxation-time approach fed with the FLAPW wave-functions within the rigid band approximation. Depending on the real process of re-arrangement of atoms in the cell to reach the equilibrium state, $CeBiTe_3$ was found to manifest a metal or a narrow bandgap semiconductor. This feature along with the strong correlation effect originated by the 4f states of Ce affect significantly on the thermoelectric properties. We showed that the position of the strongly localized f-states in energy scale (Fig. 1, f-states are shaded) was found to alter critically the transport properties in this material suggesting an opportunity to improve the thermoelectric efficiency by tuning the external strain which may changing the location of the f-sates.