• Korean Journal of Materials Research
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• v.4 no.2
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• pp.227-232
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• 1994

Diamondlike carbon thin film has been fabricated with low discharging frequency, 450KHz by plasma enhanced chemical vapor deposition. Its physical properties such as optical band gap, microhardness and internal stress have been compared with 13.56MHz film. Optical band gap of 450KHz DLC thin film was less than 13.56MHz film and it was found that C-H bond concentration and total hydrogen contents in the film decreased greatly as the result of FT-IR and CHN analysis. Also, when DLC thin film was fabricated with low discharging frequency, it was expected that the adhesion of the film to the substrate was improved by the great decrease of internal stress without any considerable decrease of microhardness.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2133-2139
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• 2012

A new system using $TiO_2$ (nano-sized, band-gap 3.14 eV)-impregnated spherical ZnS (micro-sized, band-gap 2.73 eV) nano/micro-composites (Ti 0.001, 0.005, 0.01, and 0.05 mol %/ZnS) was developed to enhance the production of hydrogen from methanol/water splitting. The ZnS particles in a spherical morphology with a diameter of about 2-4 mm which can absorb around 455 nm were prepared by hydrothermal method. This material was used as a photocatalyst with loading by nano-sized $TiO_2$ (20-30 nm) for hydrogen production. The evolution of $H_2$ from methanol/water (1:1) photo splitting over the $TiO_2$/ZnS composite in the liquid system was enhanced, compared with that over pure $TiO_2$ and ZnS. In particular, 1.2 mmol of $H_2$ gas was produced after 12 h when 0.005 mol % $TiO_2$/ZnS nano/micro-composite was used. On the basis of cyclic voltammeter (CV) and UV-visible spectrums results, the high photoactivity was attributed to the larger band gap and the lower LUMO in the $TiO_2$/ZnS composite, due to the decreased recombination between the excited electrons and holes.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.88-93
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• 2002

$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}:Co^{2+}$ + single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a= 5.5966A. c= 10.8042${{\AA}}$ for the pure. a= 5.6543${{\AA}}$. c= 10.8205${{\AA}}$ for the Co-doped single crystal. respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity. Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation. we can deduced the entropy. enthalpy and heat capacity. Also. we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Bulletin of the Korean Chemical Society
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• v.19 no.6
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• pp.628-634
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• 1998

The properties of the n-type impurities nitrogen and phosphorus in diamond have been investigated by means of electronic band structure calculations within the framework of the semiempirical extended Huckel tight-binding method. For diamond with the nitrogen and phosphorus substitutional impurities, calculated density of states shows the impurity level deep in the band gap. This property can be derived from the substantial <111> relaxation of the impurity and nearest-neighbor carbon atoms, which is associated with the population of an antibonding orbital between them. The passivated donor property of the P-vacancy complex which lies deep in the gap is also discussed.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.6A
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• pp.499-509
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• 2005

The capacity of Satellite DMB(Digital Multimedia Broadcasting) system is limited mainly by the interference. So, to achieve the expected performance of Satellite DMB system and to minimize the interference from other Satellite DMB system, ACI(Adjacent Channel Interference) should be considered carefully. Satellite DMB system uses the Gap-filler for effective transmission in terrestrial environment, and the Gap-filler can use direct amplification or frequency conversion to satisfy the specific requirements. Therefore, amplified signal causes several effects on interference between System A(Eureka 147 DAB) and System E(ISDB : Integrated services Digital Broadcasting). In this paper, by using the outcome of system-level simulation considering the results of link-level simulation, we analyze the interferences between System A and System E under practical situation based on the exact parameters of ITU-R BO. 1130-4. We also propose the appropriate level of guard band and Cell Radius to optimize system capacity by adapting the spectrum mask given in the spec. and utilizing the interference analysis between System A and System E.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.42-43
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• 2002

반도체 디바이스의 발전은 높은 직접화 및 동작 속도를 추구하고 있으며, 이를 위해서 MOSFET의 scale down시 발생되는 문제를 해결해야만 한다. 특히, Channel이 짧아짐으로써 발생하는 device의 열화현상으로 동작전압의 조절이 어려워 짐을 해결해야만 하며, gate oxide 두께를 줄임으로써 억제할 수 있다고 알려져 왔다. 현재, gate oxide으로 사용되고 있는 SiO2박막은 비정질로써 ～8.7 eV의 높은 band gap과 Si기판 위에서 성장이 용이하며 안정하다는 장점이 있으나, 두께가 1.6 nm 이하로 얇아질 경우 전자의 direct Tunneling에 의한 leakage current 증가와 gate impurity인 Boron의 channel로의 확산, 그리고 poly Si gate의 depletion effect[1,2] 등의 문제점으로 더 이상 사용할 수 없게 된다. 2001년 ITRS에 의하면 ASIC제품의 경우 2004년부터 0.9～l.4 nm 이하의 EOT가 요구된다고 발표하였다. 따라서, gate oxide의 물리적인 두께를 증가시켜 전자의 Tunneling을 억제하는 동시에 유전막에 걸리는 capacitance를 크게 할 수 있다는 측면에서 high-k 재료를 적용하기 위한 연구가 진행되고 있다[3]. High-k 재료로 가능성 있는 절연체들로는 A1₂O₃, Y₂O₃, CeO₂, Ta₂O, TiO₂, HfO₂, ZrO₂,STO 그리고 BST등이 있으며, 이들 재료 중 gate oxide에 적용하기 위해 크게 두 가지 측면에서 고려해야 하는데, 첫째, Si과 열역학적으로 안정하여 후속 열처리 공정에서 계면층 형성을 배제하여야 하며 둘째, 일반적으로 high-k 재료들은 유전상수에 반비례하는 band gap을 갖는 것으로 알려줘 있는데 이 Barrier Height에 지수적으로 의존하는 leakage current때문에 절연체의 band gap이 낮아서는 안 된다는 점이다. 최근 20이상의 유전상수와 ～5 eV 이상의 Band Gap을 가지며 Si기판과 열역학적으로 안정한 ZrO₂[4], HfiO₂[5]가 관심을 끌고 있다. HfO₂은 ～30의 고유전상수, ～5.7 eV의 높은 band gap, 실리콘 기판과의 열역학적 안전성 그리고 poly-Si와 호환성등의 장점으로 최근 많이 연구가 진행되고 있다. 또한, Hf은 SiO₂를 환원시켜 HfO₂가 될 수 있으며, 다른 silicide와 다르게 Hf silicide는 쉽게 산화될 수 있는 점이 보고되고 있다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39B no.1
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• pp.44-52
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• 2014

In this study, the influence of the near field, far field and radiation directivity of microstrip patch antenna when is used mushroom EBG(Electromagnetic Band Gap) as ground is investigated. Using characteristic of dispersion diagram of mushroom EBG, we calculated forbidden band(2.36GHz-2.85GHz) given mushroom type EBG microstrip antenna(2.45GHz) having 2-layer EBG that is operating within forbidden band. In oder to conform performance enhancemen of antenna using EBG ground, we have compared with the antenna using PEC(Perfect Electric Conductor) ground. We could know about 2.74dB increment of the radiation directivity, because EBG can suppress surface wave that is generated at interfaces of the dielectrics-conductor.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.337-340
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• 2001

We show that the microstrip ring with a narrow gap exhibits a photonic band gap (PBG) that is generally believed to be created by a periodic array. The discontinuity of impedance at the narrow gap induces the multiple reflections with fixed phase correlation necessary to make the PBG. We have also discussed the tuning of the PBG frequency by applying an external voltage on a varactor mounted on the gap and the applications of this PBG ring as a tunable bandstop filter and a microwave switch.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.67.1-67.1
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• 2010

Triple junction solar cell을 위한 a-SiGe middle cell의 조건별 광학적 특성에 관한 연구를 실시하였다. a-SiGe I층은 GeH4 유량, 압력, H2 dilution ratio를 변화시켜 제조하였으며 전기적, 광학적 특성을 비교하여 최종적으로 선택된 조건을 triple junction solar cell에 적용하였다. a-SiGe I층은 Ge contents가 증가함에 따라 band gap은 감소하고 45% 이상의 조건에서는 700nm 전후 파장의 투과율이 감소하며, 압력이 감소함에 따라 band gap은 소폭 감소하나 700nm 전후 파장의 투과율은 증가하였다. 그리고 H2 ratio가 증가함에 따라 band gap은 소폭 감소하나 투과율에는 큰 변화가 없었다. 상기 결과를 바탕으로 최종적으로 선택된 조건에서 triple-junction solar cell을 제작하여 평가한 결과 초기 변환효율 9%의 결과를 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.37-37
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• 2009

박막태양전지는 p-i-n substrate형과 n-i-p substrate형 두가지구조로 제조된다. 각 layer에서 activation energy와 band gap energy를 ASA simulator를 통해 조절해보았다. Simulation결과 p-i-n substrate형에서 p-layer와 n-i-p substrate형 n-layer에서 동일하게 activation energy 0.2eV, band gap energy 1.80eV에 최고효율 나왔고 각각 10.07%, 10.17%의 최고효율을 구할 수 있었다. 최적화 과정을 통하여 같은 조건에서 p-i-n substrate형 보다 n-i-p substrate형이 보다 높은 효율을 낸다는 것을 알 수 있었으며 본 연구를 통해 각 구조의 차이를 알 수 있었고 이는 높은 효율의 박막태양전지 설계에 도움이 될 것 이다.