• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.39-42
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• 2006

Titania sols or powders were are very promising materials for environment as photocatalyst. The band gap energy of $TiO_2$ has been known to be 2.8 to 3.2 eV. But the measuring system of its band gap is usually depend on absorption properties. Thus, in this study, absorption properties of $TiO_2$ sols prepared by hydrothermal process were researched with the effect of various particle sizes and concentrations. The mean particle size in $TiO_2$ sols increased as 15 nm to 60 nm, absorption graph measured by UV-Vis spectrometer shows to move red-shift. When dilute solution added with $2^n$ in $TiO_2$, the band gap energy increases as linear function.

• Coupled systems mechanics
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• v.5 no.4
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• pp.305-314
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• 2016

We utilize first-principles calculations within density-functional theory to investigate the possibility of strain engineering in the tuning of the band structure of two-dimensional $MoS_2$. We find that the band structure of $MoS_2$ monolayers transits from direct to indirect when mechanical strain is applied. In addition, we discuss the change in the band gap energy and the critical stains for the direct-to-indirect transition under various strains such as uniaxial, biaxial, and pure shear. Biaxial strain causes a larger change, and the pure shear stain causes a small change in the electronic band structure of the $MoS_2$ monolayer. We observe that the change in the interaction between molecular orbitals due to the mechanical strain alters the band gap type and energy.

• Journal of the Optical Society of Korea
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• v.1 no.2
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• pp.100-103
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• 1997

We perform degenerate and nondegenerate pump-probe experiments on bulk GaAs at 100 K below the band gap. We mostly observe a negative differential transmission signal both in the degenerate and nondegenerate experiments. We interpret our signal as due to two-photon absorption. This negative signal has a different origin from the normally considered band gap renormalization for resonant excitations.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.490-495
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• 1994

We investigated photoreflectance of semi-insulating GaAs with respect to modulation sources, that is, modulation beam intensity, modulation frequency, temperature, and thickness of sample. PR spectra by each modulation source turned out to be signals of low electric field third differential, and band gap values of sample were fitted by least square root method for Aspnes' theoretical equation.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.953-956
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• 2008

Using the theoretical model of Auger electron emission, effects of MgO properties which include band gap energy, escape probability, gas ion, and doping elements on the yield of secondary electron emission were examined. The results indicated that the band gap of MgO must be decreased and escape probability must be enhanced in order to increase the yield of secondary electrons from Xe ions and that may proved to be a critical for achieving high luminance efficacy in ac-PDPs.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.312-319
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• 2015

본 연구에서는 전자구조 계산을 통해 태양전지의 소재로 적합한 Graphene과 h-BN의 합성물을 찾아내었다. 태양전지가 최대 효율을 가지려면 소재의 band gap이 약 1.2 eV이어야 하는데, 본 연구에서는 이러한 물질을 다수 찾아 내었고 이런 물질들의 특징을 분석하였다. carbon domain이 넓을수록 band gap이 작았고 carbon ring이 유지될수록 cohesive energy가 컸다. 이를 다시 적용하여 적합한 구조를 예상하였으며 이와 잘 맞는 계산결과를 얻었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.262-264
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• 2009

Ternary oxides with controlled band gap energy and reduced reactivity against moisture and carbon dioxide gas were designed and studied as a potential material for protective layer of ac-PDPs. The results showed a significant reduction in firing voltage and improved environmental stability.

• Journal of Power Electronics
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• v.18 no.4
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• pp.985-996
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• 2018

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1601_1602
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• 2009

본 논문은 SSN(Simultaneous Switching Noise) 이 유전체를 통해 다른 시스템에 유기되는 것을 막기 위한 방법인 EBG(Electromagnetic Band-Gap)에 관한 연구이다. 이에 대한 EBG 구조를 설계하기 위해 PDN(Power Delivery Network)에 주기적인 패턴을 삽입한다. 패키지에 EBG 구조를 적용하기 위해 인쇄 회로기판 범위에서 연구되었던 구조를 변형 및 개조하여 EBG 구조가 내포하고 있는 필터의 차단 주파수의 범위를 넓히며 차단 시작 주파수를 1GHz 아래로 낮추는 소형화 방법을 모색한다. 이 연구에서 실시할 EBG 구조에 대한 간단한 고찰과 인쇄 회로 기판에 적합한 AI-EBG(Alternating impedance Electromagnetic Band-Gap) 구조를 이용한 EBG 의 소형화에 대해 언급하고, 소형화를 위한 3-D EBG 의 설계구조에 대해 설명한다. 그리고 저주파에서 차단특성을 높이기 위한 방법으로 3-D EBG를 사용하고 AI-EBG와 비교하여 차단특성의 변화를 Full-wave 시뮬레이션과 측정으로서 비교한다.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.115.1-115.1
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• 2011

최근 기본적인 pin 구조의 박막 cell 에서 i layer를 최적화 시키는 방안으로 double layer 구조가 많이 연구되고 있다. 본 연구에서는 ASA(Advanced Semicon ductor Analysis) simulation을 이용하여 i-double layer 최적화에 대한 연구를 진행해 보았다. 두께 150/150nm의 i double layer의 band gap 가변을 한 simulation 결과를 보았을 때, p쪽의 band gap이 상승하면서 intrinsic layer 내의 field가 증가하여 recombination center가 감소하였으나 FF의 감소가 있었다. n쪽의 band gap을 상승 시켰을때 n/i 쪽 field 증가로 Voc가 상승되어 초기 효율이 증가하였으나 intrinsic layer내의 field가 감소하여 recombination center가 오히려 증가하였다. 결과적으로 electric field와 효율을 동시에 고려했을 때 두께 300nm, 1.75의 band gap을 가지는 single layer 보다 150/150nm두께에 1.8/1.7 또는 1.8/1.75의 bandgap을 가지는 double layer를 사용하였을 때 보다 높은 효율을 얻을 수 있었다.