Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 7 Issue 6
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- Pages.490-495
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- 1994
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Band-gap energy (Eo) measurements of semi-insulating GaAs by photoreflectance
Photoreflectance에 의한 반절연성 GaAs의 띠간격 에너지(Eo)측정
Abstract
We investigated photoreflectance of semi-insulating GaAs with respect to modulation sources, that is, modulation beam intensity, modulation frequency, temperature, and thickness of sample. PR spectra by each modulation source turned out to be signals of low electric field third differential, and band gap values of sample were fitted by least square root method for Aspnes' theoretical equation.
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