• Current Optics and Photonics
• /
• v.2 no.6
• /
• pp.629-634
• /
• 2018

A broad dual-band terahertz metamaterial filter with sharp out-of-band rejections is designed and demonstrated. The center frequencies of the first and the second bands occur at 0.35 THz and 0.96 THz with 3 dB relative bandwidth of 31% and 17%, respectively. Results are measured using a THz time-domain spectroscopy system that shows agreement with simulations. Physical mechanisms of the broad dual-band resonance are clarified based on transmissions of different structures and surface current density distributions. Influence of structure parameters on the transmission characteristics are discussed. Symmetry of the structure ensures the filter polarization independence at normal incidence. These results supported by the design of the filter could find applications in broad multi-band sensors, terahertz communication systems, and other emerging terahertz technologies.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.22 no.5
• /
• pp.787-793
• /
• 2018

In this paper, we propose a new single carrier - frequency domain equalization (SC-FDE) structure to cope with narrow band interference. In the conventional SC-FDE structure, when a high-power narrow band interference exists, channel estimation and data recovery is difficult. To relieve from this problem, this paper proposes a new SC-FDE frame structure to enable frequency-domain channel estimation in the environments that exist narrow band interference. Specifically, in the conventional method, the channel estimation is performed in time-domain first and from that, the frequency-domain channel is obtained by Fourier transform. In contrast, we proposed a new SC-FDE structure to enable frequency-domain channel estimation directly from received signals without time-domain channel estimation. The receiver performance improvement is verified through computer simulation. According to the results, the proposed technique can detect the signal with less than 2 dB loss compared with jammer-free environments, while the conventional method does not communicate with each other.

• Electrical & Electronic Materials
• /
• v.9 no.4
• /
• pp.372-378
• /
• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• Advances in nano research
• /
• v.9 no.2
• /
• pp.105-112
• /
• 2020

Silicene is a two-dimensional (2D) derivative of silicon (Si) arranged in honeycomb lattice. It is predicted to be compatible with the present fabrication technology. However, its gapless properties (neglecting the spin-orbiting effect) hinders its application as digital switching devices. Thus, a suitable band gap engineering technique is required. In the present work, the band structure and density of states of uniformly doped silicene are obtained using the nearest neighbour tight-binding (NNTB) model. The results show that uniform substitutional doping using aluminium (Al) has successfully induced band gap in silicene. The band structures of the presented model are in good agreement with published results in terms of the valence band and conduction band. The band gap values extracted from the presented models are 0.39 eV and 0.78 eV for uniformly doped silicene with Al at the doping concentration of 12.5% and 25% respectively. The results show that the engineered band gap values are within the range for electronic switching applications. The conclusions of this study envisage that the uniformly doped silicene with Al can be further explored and applied in the future nanoelectronic devices.

• Textile Coloration and Finishing
• /
• v.27 no.4
• /
• pp.270-274
• /
• 2015

Molecules always show broad absorption band envelopes, and this results from the vibrational properties of bonds. The width of an absorption band can have an important influence on the color of a dye. A narrow band imparts a bright, spectrally pure color to the dye, whereas a broad band can give the same hue, but with a much duller appearance. Typically, half-band widths of cyanine dyes are about 25nm compared to value of over 50nm for typical merocyanine dyes. Thus, cyanine dyes are exceptionally bright. The factors influencing the width of an absorption band can be understood with reference to the Morse curves. The width of the absorption band depends on how closely the bond order of the molecules in the first excited state resembles that in the ground state. We have quantitatively evaluated the "molecular structure-absorption band shape" relationship of dye molecules by means of Pariser-Parr-Pople Molecular Orbital Method(PPP-MO).

• The Journal of the Acoustical Society of Korea
• /
• v.31 no.7
• /
• pp.472-479
• /
• 2012

This paper is aimed to design 9.2 kbps low bits late transform excitation coder that target to voice and audio signal. To set up low bit rate, we used Band-selection in frequency domain and gain-shape quantization and AbS structure. To decrease lots of calculation from ABS structure, we used each band IDFT and synthesis. And we designed non-transfer band for performance by inserting comfort noise. We propose coder that has low bit rate and similar performance comparing with original 10.4 kbps AMR-WB+ TCX mode.

• Proceeding of EDISON Challenge
• /
• 2015.03a
• /
• pp.324-329
• /
• 2015

First-principles investigations on the hybrid one dementional hexagonal hybrboron-nitride nano ribbons (BNNRs) with a armchair graphene nano-ribbons(AGRNRs), are presented. Electronics properties of the mixed armchair BNC nano-ribbon (BNCNRs) structure show control of a band gap on all cases at the special K-point. And we have studied, the band gap is direct in all cases. The band gap of mixed ABNCNRs could be divided into three groups (${\Delta}3p$, ${\Delta}3p+1$ and ${\Delta}3p+2$) and decrease with the increase of the width. Also these results show similar to the AGNRs case. Different from the band gap value ordering of AGNRs (${\Delta}3p+1$ > ${\Delta}3p$ > ${\Delta}3p+2$), the ordering of ABNCNRs is ${\Delta}3p$ > ${\Delta}3p+1$ > ${\Delta}3p+2$. The discrepancy may come from the differences between the edges of AGRNRs and the boundaries of hybrid BNCNRs. In addition, the bandgap of ABNCNRs are much smaller than those of the corresponding AGNRs. Our results show that the origin of band gap for BNCNRs with armchair shaped edges arises from both quantum confinement effect of the edges. These results similar to thecase of AGNRs. These properties of hybrid BN/C nano-ribbon structure may offer suitable bandgap to develop nnanoscale electronics and solar cell beyond individual GNRs and BNNRs.

• Journal of electromagnetic engineering and science
• /
• v.16 no.3
• /
• pp.159-163
• /
• 2016

In this paper, a frequency tunable double band-stop resonator (BSR) with voltage control by varactor diodes is suggested. It makes use of a half-wavelength shunt stub as its conventional basic structure, which is replaced by the distributed LC block. Taking advantage of the nonlinear relationship between the frequency and electrical length of the distributed LC block, a dual-band device can be designed easily. With two varactor diodes, the stop-band of the resonator can be easily tuned by controlling the electrical length of the resonator structure. The measurement results show the tuning ranges of the two operating frequencies to be 1.82 GHz to 2.03 GHz and 2.81 GHz to 3.03 GHz, respectively. The entire size of the resonator is $10mm{\times}11mm$, which is very compact.

• Applied Science and Convergence Technology
• /
• v.26 no.3
• /
• pp.43-46
• /
• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.7 no.1
• /
• pp.56-65
• /
• 2007

This paper describes physical meanings of various influences of cavity (or pillar) shape and filling factor of dielectric material on band structures in two-dimensional photonic crystals. Influences of circular and rectangular cross-sections of cavity (or pillar) arrays on photonic band structures are considered theoretically, and significant aspects of square and triangular lattices are compared. It is shown that both averaged dielectric constant of the photonic crystal and distribution profile of photon energy play important roles in designing optical properties. For the triangular lattice, especially, it is shown that cavity array with a rectangular cross-section breaks the band structure symmetry. So, we discuss this point from the band structure and address optical properties of lattice with a circular cross-section cavity.