FIG. 1. Schematic view of the fourfold rotational symmetry filter, where P = 150, R = 70, W= 13, and h = 120 (all sizes in μm). (a) top view, (b) side view, microscope images of the fabricated sample at scale (c) 50 μm and (d) 100 μm.
FIG. 2. The measured (solid line) and simulated (dash line) transmission curves for the broad dual-band filter at normal incidence.
FIG. 3. Influence of (a) metal material and (b) dielectric loss on the transmission.
FIG. 4. Transmission for the dielectric only (dotted line), single metal-dielectric structure (MD, dot-dashed line) and metal-dielectric-metal structure (MDM, solid line). The parameters are same as those in Fig. 1.
FIG. 5. Surface current density distributions of the two pass bands. The yellow parts indicate the metallic Al layers, red lines with arrows indicate instantaneous directions of the current flow. (a) The top layer and (b) bottom layer of f1 = 0.311 THz. (c) The top layer and (d) bottom layer of f2 = 0.383 THz. (e) The top layer and (f) bottom layer of f3 = 0.898 THz. (g) The top layer and (h) bottom layer of f4 = 1.019 THz.
FIG. 6. Transmission for different period and radius (a) period P, and (b) radius R.
FIG. 7. Transmission for different width and substrate thickness (a) width w, and (b) substrate thickness h.
FIG. 8. Transmission of oblique incidence for (a) TE and (b) TM polarization.
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