• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.196-199
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• 2009

We report the multiple quantum well (MQW) structure for highly efficient red phosphorescent OLEDs. Various triplet quantum well devices from a single well to five quantum wells are realized using a wide band-gap hole and electron transporting layers, narrow band-gap host and dopant material, and charge control layers (CCL). The maximum external quantum efficiency of 14.8 % with a two quantum well device structure is obtained, which is the highest value among the red phosphorescent OLEDs using same dopant.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.8
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• pp.1305-1312
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• 2000

This paper presents the design and implementation of the CPW end-coupled band-pass filter with the finitely backed conductor (FBC). To reduce the large insertion loss in CPW structure, the improvement in loss characteristic through the change of CPW structure is introduced. The CPW filters with narrow bandwidth are suggested and characterized for their microwave performance using the finitely backed conductor. This structure

• ETRI Journal
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• v.46 no.4
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• pp.571-580
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• 2024

A compact triple-band porous electromagnetic bandgap structure-loaded coplanar-waveguide-fed wearable antenna is introduced for applications of wireless body area networks. The porous structure is aimed to create a stopband or bandgap in the electromagnetic spectrum and increase breathability. The holes in the bottom electromagnetic bandgap surface increase the inductance, which in turn increases the bandwidth. The final design resonates at three bands with impedance bandwidths of 264 MHz, 100 MHz, and 153 MHz and maximum gains of 2.18 dBi, 6.75 dBi, and 9.50 dBi at 2.45 GHz, 3.5 GHz, and 5.5 GHz, respectively. In addition, measurements indicate that the proposed design can be deformed up to certain curvature and withstand human tissue loading. Moreover, the specific absorption rate remains within safe levels for humans. Therefore, the proposed antenna can suitably operate in the industrial, scientific, and medical, Bluetooth, Wi-Fi, and WiMAX bands for potential application to wireless body area networks.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2462-2467
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• 2009

This paper proposes a dual band branch line coupler (BLC) using a composite right/left handed (CRLH) transmission line. The existing dual band BLCs with open stubs require hundreds of line impedance for the open stub as the frequency bands approach to each other, so it has been almost impossible to realize them. However in the proposed BLC, a CRLH transmission line replaces the open stub with an extremely high line impedance so that the BLC circuit may be realized even two frequencies are close to each other. As an example, a dual band BLC operating at 1800MHz and 2300MHz (the frequency ratio is 1:1.28) is designed and measured. Open stubs with $560\Omega$ line impedance are replaced by CRLH transmission lines for realizing the dual band BLC. The measured performances prove that the dual band operation is well acceptable and the proposed design method is successful even the ratio between two frequencies is not around two nor more.

• The Journal of the Acoustical Society of Korea
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• v.23 no.6
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• pp.481-487
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• 2004

In this paper. the structure of bandwidth scalable wideband speech codec and its high-band codec are proposed. In the high-band codec. the signal is divided into frequency bands. and each band is quantized in DCT domain. The DCT coefficients are splitted into magnitude and sign, and each is quantized independently by a specialized method based on its characteristics. In addition. the quantized gain parameter in the low-band codec is utilized in the high-band codec for an enhanced performance. The bandwidth scalable wideband speech codec using G.729E for low-band and the proposed codec for high-band is developed, and it is confirmed that the proposed codec has better subjective performance than 24kbps G.722.1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.219-222
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• 2003

In this paper, we designed a Ku-band BPF(Band Pass Filter) by microstrip line that most usually used a microwave device design and fabrication. Here a substrate of designed BPF were silicon substrate(${\varepsilon}_r=11.8$), and metal line was copper and silver/copper structure. And a configration of BPF was used hairpin pattern. A center frequency of designed BPF was 10GHz and their FBW(Fractional Band Width) was 20%(2GHz). It presented simulated results obtained for a 10GHz filter which yields an insertion loss of 0.1dB that ripple value related chebyshev reponse. Finallt we tried to make that a 30dB attenuation frequency was 20% of center frequency.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.7
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• pp.75-79
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• 2004

In this paper, a single plane wide band microstrip antenna for integrated circuit as MMIC and LTCC is designed and fabricated. A new configuration for a wide band microstrip antenna with omni-directional pattern is proposed. This antenna consists of two rectangular folded dipoles, which are fed by a coplanar waveguide(CPW). It was effected stabilization ground that a signal plane of CPW feed have been limited ground plane. Therefore, a ground plane of folded structure should be extended outside folded antenna in this research. The characteristics of the proposed antenna were analyzed by using an FDTD methods. The return loss and radiation patterns were simulated and measured. The proposed antenna is get 120MHz bandwidth of PCS band and 250MHz bandwidth of IMT2000 band, used ISM band.

• Information and Communications Magazine
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• v.13 no.11
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• pp.181-191
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• 1996

In this paper we discuss narrow-band interference rejection schemes for spectrum overlay communications where direct sequence spread spectrum (DS/SS) communication system and narrow-band communication systems share the same frequency band. In this case, it is essential to reject the narrow-band signals to guarantee the performance of DS/SS system, while it is not necessarily required to reject the DS/SS signal to recover the narrow-band signal. We discuss several schemes such as time domain processing, frequency domain processing and exploiting the device characteristics to reduce the effect of narrow-band signal on DS/SS communication systems. Furthermore, we suggest a structure of tunable notch filter using gyrator that can easily be customized to ASIC.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.11
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• pp.2032-2037
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• 2010

This paper describes a design of dual band amplifier using left handed (LHJ) transmission line, which is a part of composite right/left handed (CRLH) transmission line. It is well known that CRLH transmission lines show dual band frequency response. At first, two single-band amplifiers for frequency f1 and f2 are designed, and their matching networks at both amplifiers are synthesized into the dual band matching network by adopting CRLH structure. As an example for proving the validity of the proposed design, a dual band amplifier operating at 1800MHz and 2300MHz is designed, fabricated and measured. The simulation and measurement show that the proposed amplifier operates well at the desired dual bands with the gain of 13.65dB and 19dB at 1850MHz and 2360MHz, respectively, and a good matching performances. In addition, a quite good agreement between the simulation and measurement is observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.267-270
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• 2004

A silver indium sulfide($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high qualify crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks. are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\ddot{A}cr$, and the spin orbit splitting, $\ddot{A}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_g(T)$, was determined.