Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on a design of Band Pass Filter C-band using silicon substrate

실리콘 기판을 이용한 Ku-band용 Band Pass Filter 설계에 관한 연구

  • Lee, Tae-Il (Dept. Electronic Engineering, Chongju Unlv.) ;
  • Cui, Ming-Lu (Dept. Electronic Engineering, Chongju Unlv.) ;
  • Park, In-Chul (Dept. Electronic Engineering, Chongju Unlv.) ;
  • Kim, Hong-Bae (Division of Information and Communication Engineering, Chongju University)
  • 이태일 (청주대학교 대학원 전자공학과) ;
  • 최명률 (청주대학교 대학원 전자공학과) ;
  • 박인철 (청주대학교 대학원 전자공학과) ;
  • 김홍배 (청주대학교 이공대학 정보통신공학부)
  • Published : 2003.07.10
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Abstract

In this paper, we designed a Ku-band BPF(Band Pass Filter) by microstrip line that most usually used a microwave device design and fabrication. Here a substrate of designed BPF were silicon substrate(${\varepsilon}_r=11.8$), and metal line was copper and silver/copper structure. And a configration of BPF was used hairpin pattern. A center frequency of designed BPF was 10GHz and their FBW(Fractional Band Width) was 20%(2GHz). It presented simulated results obtained for a 10GHz filter which yields an insertion loss of 0.1dB that ripple value related chebyshev reponse. Finallt we tried to make that a 30dB attenuation frequency was 20% of center frequency.

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