• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.810-813
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• 2003

Application of inorganic silica-neodymia alloy films grown by sputtering technology to the dielectric layer of plasma display panel (PDP) is presented. The experimental results reveal that dielectric constant of the alloy films increases with neodymia concentration. Also, the alloy films act as band rejection color filter owing to sharp absorptions originating in the intratransition within the 4f shell of the $Nd^{3+}$ ion. In the optical band pass region, the transmittances of the alloy films show higher than those of commercial glass-like dielectrics. As a result, the luminance of PDP device with the alloy dielectric layer is higher than that of device with conventional dielectrics, indicating wider color gamut and higher color purity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.379-379
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• 2010

$Hg_{1_x}Cd_xTe$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5\;{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.65-71
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• 2011

Properties of each layer in DSSC were investigated to improve solar cell characterstics. Also in this study, low costsolar simulator system is fabricated and used. Efficiency of DSSC is better in the case of thinner semiconductive layer, because thick semiconductive layer is acted as resistor. Sc-doped ZnO thin films showed better electrical property by proper donor doping effect. Among the dyes, DSSC containing N719 showed higher efficiency, because N719 have smaller electron affinity and shallow band gap.

• 대한화학회지
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• 제21권4호
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• pp.246-255
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• 1977

여러 종류의 層間 陽이온을 가지고 있는 層狀 硅酸鹽上에서 일어난 methylmethacrylate의 吸着에 關하여 赤外線 分光法과 X-ray로 硏究하였다. 吸着된 methylmethacrylate의 여러 개의 特性 carbonyl band가 陽이온의 種과 脫水溫度에 따라서 다르게 1723∼1547$cm^{-1}$의 範圍에서 나타났다. 190$cm^{-1}$程度로 shift한 carbonyl 伸縮 band는 polyvalent 陽이온에만 나타났으며 $>C=O{\cdot}{\cdot}{\cdot}M^{n+}$型 着物形成 基因하는 것이었다. 1703∼1640$cm^{-1}$에서 나타난 band는 carbonyl 酸素와 陽이온 水 또는 陽이온 水酸基와의 水素結合에 依한 것이었고 shift한 정도는 層間 陽이온의 polarizing power와 좋은 相互 關係를 이루었다. 그러나 1723$cm^{-1}$에서 나타난 band는 陽이온의 鍾과는 相互 關係가 없었으며 carbonyl ,酸素와 表面 水酸基와의 相互 作用으로 因한 것이었다. Interlamellar spacing을 계산해 본 結果 methylmethacrylate의 分子平面은 硅酸鹽의 層과 平行하게 놓여 있는 것 같다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.19.2-19.2
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• 2011

The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

• Applied Science and Convergence Technology
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• 제26권3호
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• pp.43-46
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• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• Journal of the Optical Society of Korea
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• 제19권6호
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• pp.665-672
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• 2015

We demonstrate an ultrathin metamaterial for polarization independent perfect absorption as well as a band-pass filter (BPF) which works at a higher frequency band compared to the perfect absorption band. The planar metamaterial is comprised of three layers, symmetric split ring resonators (SSRRs) at the front and structured ground plane (SGP) at the back separated by a dielectric layer. The perfect metamaterial absorber (MA) can realize near 100% absorption due to high electromagnetic losses from the electric and/or magnetic resonances within a certain frequency band. The thickness of the structure is only 1/28 of the maximum absorption wavelength.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.138-138
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• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• 대한원격탐사학회:학술대회논문집
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• 대한원격탐사학회 2007년도 Proceedings of ISRS 2007
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• pp.258-261
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• 2007

Although there have been lack of studies using X-band SAR data particularly for forestry application as compared to C-, and L-band SAR data, it has a potential to distinguish tree species because most signals are backscattered on the top of canopy. This study aimed to compare signal characteristics of multi-band SAR data including X-band for classifying tree species. The data used for the study are SIR-C/X-SAR data (X-, C-, L-band) obtained on Oct. 3, 1994 over the forest area near Seoul, S. Korea. Thirty ground sample plots were collected per each tree species. Initial comparison of backscattering coefficients among three SAR bands shows that X-band data showed better separation of tree species than C- and L-band SAR data irrespective of polarization. The weak penetrating in canopy layer might be possible source of information for X-band data to be useful for the classification of forest species and cover type mapping.