• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.161-166
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• 2005

Glass formation, thermal property and crystallization behavior were investigated in $xK_2O-(33.3-x)BaO-16.7TiO_2-50SiO_2(mole\%)$ with fresnoite($Ba_2TiSi_2O_8$) crystal by replacement BaO for $K_2O$. As x(0$\le$x$\le$20) contents increased, glass formation became easy, and crystallization temperature moved on to the low temperature. Crystal phase of the $Ba_2TiSi_2O_8$ was confirmed by XRD, and the replaced x was not effected on the formation of new crystals. The kinetics of crystallization of fresnoite were studied by applying the DTA measurements carried out at different heating rates. The average avrami exponent(n) and activation energy were changed $2.26 {\pm}0.1,\;2.03 {\pm}0.1,\;1.93{\pm}0.15$, $279 {\pm}12kJ/mole,\;302{\pm}7kJ/ mole,\;319{\pm}1kJ/mole$ according to x contents, respectively. The replaced x improved the orientation of crystal growth.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.987-990
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• 1999

본 연구에서는 $BaTiO_3$를 기본 조성으로 하여 PTC 써미스터를 제조하였으며 여기에 첨가제로서 Ca, Mn, Nb의 양을 순차적으로 변화시켜 미세구조 및 전기적 특성을 연구하였다. 또한 복소 임피던스 측정을 통해서 PTC 효과에 미치는 주 저항 성분에 대해서 고찰하였다. Ca 첨가 실험에서는 5[mol%] 첨가된 시편에서 $2.3{\times}10^7[\Omega{\cdot}cm]$의 높은 peak 비저항이 나왔으며 Mn과 Nb에서는 각각 0.1[mol%], 0.2[mol%]에서 $1.5{\times}10^8[\Omega{\cdot}cm]$와 $3.71{\times}10^9[\Omega{\cdot}cm]$의 수치가 측정되었다. 또한 Nb 첨가 실험에서는 첨가량이 증가할수록 결정립의 크기가 조밀해지는 현상을 보였다. PTC 효과에 미치는 주 저항 요소에 대해서 관찰한 복소 임피던스 측정에서는 결정립계 저항 성분이 주가 됨을 확인 하였다.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.654-660
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• 2010

The influences of Na and K content on the crystal phase, the microstructure and the electrical property of $BaTiO_3$-based thermistors was found to show typical PTC effects. The crystal phase of powder calcined at $1000^{\circ}C$ for 4hrs showed a single phase with $BaTiO_3$, and the crystal structure was transformed from tetragonal to cubic phase according to added amounts of Na and K. In XRD results at $43^{\circ}\sim47^{\circ}$, the $(Ba_{0.858}Na_{0.071}K_{0.071})(Ti_{0.9985}Nb_{0.0015})O_{3-\delta}$ showed (002) and (200) peaks but the $(Ba_{0.762}Na_{0.119}K_{0.119})(Ti_{0.9975}Nb_{0.0025})O_{3-\delta}$ showed (002), (020) and (200) peaks. In sintered bodies, those calcined at $600^{\circ}C$ rather than at $1000^{\circ}C$ were dense, and for certain amounts of Na and K showed rapid decreases in grain size. In relative permittivity, the curie temperature due to the transformation of ferroelectric phase rose with added Na and K but decreased in terms of relative permittivity. In the result of the R-T curve, the sintered bodies have curie temperatures of about $140^{\circ}C$ and the resistivity of sintered bodies have scores of $\Omega{\cdot}cm$; the jump order of sintered bodies was shown to be more than $10^4$ in powder calcined at $1000^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.619-625
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• 1991

The current-voltage characteristics of the semiconducting BaTiO3 ceramics are measured in the range of 0.01∼100 Volt. Non ohmic behavior was observed above Tc. This behavior is not dependent on specimen thickness and is not observed at the incomplete semiconducting sepcimen. From this experiment, non-ohmic behavior of PTC is attributed to Heywang's potential barrier not to space change limited current. In the low voltage range, current-voltage characteristics of PTC ceramics can be explained by Heywang model.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.333-338
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• 2000

$Ba_{0.7}Sr_{0.3}TiO_3$(BST) thin films were deposited simultaneously on various electrodes and buffers by the sputtering technique. When the substrate temperature was varied, the BST thin film on each electrode showed good crystallinity above $550^{\circ}C$ as revealed by X-ray diffraction measurements. The surface morphology, determined by atomic force microscopy, indicated that the roughness of BST thin films on $RuO_2$was substrate dependent. However, BST thin films on Ru electrodes are smoother and showed no substrate dependence, probably because the precursor surface diffusion length was greater than the sinusoidal perturbations of the wavelength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.460-465
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$(x=1.10,0.15,0.20) specimens were fabricated by the solid state reaction method and then the structural and dielectric properties as a function of he composition ratio and sintering temperature were studied. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around 102$0^{\circ}C$ due to the formation of the polycrystalline perovskite phase. The BSCT(50/40/10) specimen sintered at 150$0^{\circ}C$ showed the highest average grain size(18.25${\mu}{\textrm}{m}$). The Curie temperature and dielectric constant at room temperature decreased with increasing Ca content. The dielectric constant and dielectric loss of the BSCT(50/40/10) specimen, sintered at 145$0^{\circ}C$, were about 4324 and 0.972% at 1KHz, respectively.ively.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• Korean Journal of Materials Research
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• v.29 no.2
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• pp.73-78
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• 2019

Lead free $(Ba_{0.7}Ca_{0.3})TiO_3$ thick films with nano-sized grains are prepared using an aerosol deposition (AD) method at room temperature. The crystallinity of the AD thick films is enhanced by a post annealing process. Contrary to the sharp phase transition of bulk ceramics that has been reported, AD films show broad phase transition behaviors due to the nano-sized grains. The polarization-electric hysteresis loop of annealed AD film shows ferroelectric behaviors. With an increase in annealing temperature, the saturation polarization increases because of an increase in crystallinity. However, the remnant polarization and cohesive field are not affected by the annealing temperature. BCT AD thick films annealed at $700^{\circ}C/2h$ have an energy density of $1.84J/cm^3$ and a charge-discharge efficiency of 69.9 %, which is much higher than those of bulk ceramic with the same composition. The higher energy storage properties are likely due to the increase in the breakdown field from a large number of grain boundaries of nano-sized grains.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1254-1256
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• 1994

0.15$(Ba_{0.95}Sr_{0.05})$O-0.15$(Sm_{2(1-x)}Nd-{2x})O_3-0.7TiO_2 (x=0{\sim}10[m/o])$ ceramics were fabricated by mixed-oxide method. Microwave dielectric properties was investigated with the contents of $Nd_2O_3$. Increasing the contents of $Nd_2O_3$ from 0 to 6[m/o], sintered density was increased 5.53 to $5.68[g/ cm^3]$. In the specimen with contents of $Nd_2O_3$(6[m/o]), dielectric content was maximum value of 78.14 and decreased with increasing the contents of $Nd_2O_3$. Quality factor was increased with the contents of $Nd_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.153-156
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their dielectric properties were investigated with variation of composition ratio, doped ZrO$_2$ (0.5, 1.0, 1.5, 2.0, 3.0 wt%) and sintered at 145$0^{\circ}C$. The dielectric constant and loss of the x=0.10 specimen applied field were 19.86 and 0.302 % at 0 V/cm, and 25.937 and 0.339 % at 300 V/cm, respectively. Dielectric constant were increased with increased applied field and decreased with increased frequency, and dielectric loss were within 0.1% at applied 800 MHz, respectively. all specimens showed fairly good applied field. Although, dielectric constant and loss of all specimen showed to tend of nearly the same. same.