• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.679-683
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• 2004

[ $BaO-Sm_2O_3-4TiO_2$ ] 세라믹을 LTCC용 재료로 사용하기 위해 $B_2O_3$와 CuO를 소결조제로 첨가하여 소결온도를 낮추었다. 10.0 mol%의 $B_2O_3$만을 첨가하였을 경우 $1000^{\circ}C$에서 2시간 소결시 er=72.23, Qf=4,050GHz, ${\tau}f=-0.574ppm/^{\circ}C$의 우수한 유전 특성값을 얻을 수 있었지만, $960^{\circ}C$이하에서는 소결이 잘 이루어지지 않았다. $B_2O_3$와 CuO를 동시에 소결조제로 첨가하였을 경우에는 $900^{\circ}C$에서 2시간 소결시 10.0 mol% $B_2O_3$, 15.0 mol% CuO의 첨가조성에서 ${\varepsilon}r$=70.09, Qf=4,728GHz의 우수한 유전특성을 보여 고유전율을 가진 저온 동시 소결용 재료로서의 가능성을 보여주었다. 이처럼 BaO-$Sm_2O_3-4TiO_2$ 세라믹의 소결온도를 낮출 수 있었던 요인은 소결온도보다 용융점이 낮은 2차상들이 액상을 형성하여 액상소결이 진행되었기 때문이며 이때 소결에 기여한 이차상들은 결정화되지 못하고 비정질 상태로 남아있는 것으로 추정된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.626-633
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• 1998

For the fabrication of low temperature cofirable glass/ceramic with high dielectric constant, crystallizing glass [$SiO_2-TiO_2-RO (RO:BaO, CaO:SrO)$] was formed. The glass/ceramic composites were made by mixing this glass and alumina ceramic as filler, and its characteristics was investigated. With this glass compositon, it was possible to fabricate the glass which could be crystallized under $900^{\circ}C$. And it was found that the crystallizing temperature was changed in accordance with the composition of RO in glass. By adding $Bi_2O_3$ as flux, using $Al_2O_3$ as filler and sintering at $860^{\circ}C$, low temperature cofirable glass/ceramic with high dielectric constant was fabricated. The density of that composites was 3.96 g/$\textrm{cm}^3$, dielectric constant was 17 and Q. f was 600.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.559-562
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• 2011

In this study, the effect of $Nb_2O_5$ and sintering time on the positive temperature of coefficient of resistivity (PTCR) behavior of lead free $Ba_{0.99}(Bi_{0.5}Na_{0.5})_{0.01}TiO_3$ (BBNT) ceramics were investigated in order to fabricate a PTC thermistor with high $T_c$ temperature more than $140^{\circ}C$. In particular, BBNT ceramic doped with 0.1mol% $Nb_2O_5$ and sintered at $1350^{\circ}C$ for 4 h has significantly increased Curie temperature ($T_c$) of about $200^{\circ}C$, showed good PTCR behavior of room-temperature resistivity ($\rho_{rt}$) of $40{\Omega}{\cdot}cm$, a high $\rho_{max}/\rho_{min}$ ratio of $43.78{\times}10^3$ and a large resistivity temperature factor (${\alpha}$) of 16.1%/$^{\circ}C$. With increasing addition of $Nb_2O_5$ content, the $\rho_{rt}$ decreased to a minimum value of $40\;{\Omega}cm$ at 0.1mol% $Nb_2O_5$ and the $\rho_{rt}$ increased for x value over 0.1 mol%.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.204-208
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• 1995

The microstructure and electrical propetries were investigated for polycrystalline $Ba^{1-x}Sr_xTiO_3$(BST) thin films deposited on Pt/Ti/$SiO_2$(PTSS) and Pt/MgO(PM) substrates by metalorganic chemical vapor deposition (MOCVD). BST films on PTSS have coulmnar and porous structures, while on PM have an equiaxied and dense structure. The dielectric constant and a dissipation factor of BST films on PTSS and 20 fC/$\mu \textrm{cm}^3$ on PTSS and 12fC/$\mu \textrm{cm}^2$ on PM was obtained at an applied electric field of 0.06 MV/cm. Leakage current density of BST films on PM was smaller than that on PTSS. The leakage current density level was about $8\times10^{-8}A/\textrm{cm}^2$ at 0.04MV/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.35-40
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• 2009

Lead free positive temperature coefficient of resistivity (PTCR) ceramics based on $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ solid solution were prepared by a conventional solid state reaction method. The phase structure was showed single phase with perovskite structure regardless calcinations temperature and $Ba_{1-x}(Bi_{0.5}Na_{0.5})_xTiO_3$ structure was transformed from tetragonal to orthorhombic phase at $x{\geq}0.15$ mole. The XRD peaks with $45^{\circ}{\sim}46^{\circ}$ shifted in right the influence of crystal structure change and the intensity of peak was decreased with additive $(Bi_{0.5}Na_{0.5})TiO_3$. The curie temperature risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but disappeared for $(Bi_{0.5}Na_{0.5})TiO_3$ addition more than 0.15 mole in TMA. In relative permittivity, the curie temperature by the transform of ferroelectric phase risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but decreased in relative permittivity. Also, the peak of new curie temperature showed the sample containing $0.025{\sim}0.045$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ near $70^{\circ}C$ caused by phase transform from ferroelectric to ferroelectric and the peak of new curie temperature disappeared at 0.045 mole of $(Bi_{0.5}Na_{0.5})TiO_3$. In our study, it was found that the PTCR in $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ system was possible for $0{\sim}0.025$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ and the maximum curie temperature by phase transition showed about at $145^{\circ}C$.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.120-123
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• 2000

This paper reports a newly developed sol-gel process to synthesize dense YBCO thick films with BaTiO$_3$additives using electrophoretic deposition and metal alkoxide sol/particle suspension, which we successfully produce dense $YBCO+BaTiO_3$ ceramics at a rather low temperature, compared with the sintering temperature used in conventional methods. The thick films of HTS were prepared by electrophoretic deposition, using pre-sintered powder with barium titanate addition in the form of $BaTi(OR)_6$ solution in suspension for electrophoresis. The conditions for applied voltage and deposition times for electrophoretic deposition of HTS thick films were studied in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.120-123
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• 2000

This paper reports a newly developed sol-gel process to synthesize dense YBCO thick films with $BaTiO_3$ additives using electrophoretic deposition and metal alkoxide sol/particle suspension, which we successfully produce dense $YBCO+BaTiO_3$ ceramics at a rather low temperature, compared with the sintering temperature used in conventional methods. The thick films of HTS were prepared by electrophoretic deposition, using pre-sintered powder with barium titanate addition in the form of $BaTi(OR)_6$ solution in suspension for electrophoresis. The conditions for applied voltage and deposition times for electrophoretic deposition of HTS thick films were studied in detail.

• Proceedings of the Korea Crystallographic Association Conference
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• 2007.11a
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• pp.50-51
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• 2007

• Korean Journal of Digital Imaging in Medicine
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• v.13 no.4
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• pp.185-189
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• 2011

To assess the prevalence of various radiological reduction methods for childhood intussusception in training hospitals by means of a nationwide phone survey, and to demonstrate recent trends in this area by comparing the findings with those obtained in a survey conducted. $BaTiO_3$ system was prepared by using fabrication of classical conditioning ceramics. Polycrystalline and surface structure characteristics of the specimens were measured by X-ray diffraction, SEM(Scanning Electron Microscopy) and EDAX (Energy Dispersive Spectrometer), respectively.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.439-444
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• 1996

0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15(S $m_{2(1-x}$/N $d_{2x}$) $O_{3}$-0.7Ti $O_{2}$(x=0-10[m/o]) ceramics were fabricated by mixed oxide method. Microwave dielectric properties were investigated with contents of N $d_{2}$ $O_{3}$. In the case of specimen with N $d_{2}$ $O_{3}$(6[m/o]), dielectric constant, quality factor and temperature coefficient of resonant frequency were 78.14, 2938(at 3[GHz]) and +14.19[ppm/.deg. C], respectively. By comparison its properties with undoped specimen, dielectric constant and quality factor were highly improved, but the temperature coefficient of resonant frequency was increased to positive value......