• 한국세라믹학회지
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• 제28권5호
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• pp.359-364
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• 1991

The effects of Pb5Ge3O11 on the sinterbility and lattice variation of the semiconducting 0.15 mol% Y2O3 doped BaTiO3 have been investigated as functions of additive contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 110$0^{\circ}C$ to 130$0^{\circ}C$). As the amount of Pb5Ge3O11 increases, the sinterbility of BaTiO3 increases abruptly at around 115$0^{\circ}C$. During the sintering, the most of Pb+2 ions in additives penetrate into BaTiO3 lattices and Ge+4 ions present at grain boundaries. Therefore the c lattice of the BaTiO3 increases largely and then the tetragonality increases due to the diffusion of the Pb+2 ions.

• 한국세라믹학회지
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• 제36권9호
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• pp.965-973
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• 1999

• 한국분말재료학회지
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• 제19권4호
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• pp.310-316
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• 2012

Nanocrystalline $BaTiO_3$ powder could be synthesized by solid-state reaction using the mixture which was prepared by a high energy milling process in a bead mill for $BaCO_3$ and nanocrystalline $TiO_2$ powders mixture. Effect of the milling time on the powder characteristic of the synthesized $BaTiO_3$ powder was investigated. Nanocrystalline $BaTiO_3$ with a particle size of 50 nm was obtained at $800^{\circ}C$. High tetragonal $BaTiO_3$ powder with a tetragonality(=c/a) of 1.009 and a specific surface area of $7.6m^2/g$ was acquired after heat-treatment at $950^{\circ}C$ for 2 h. High energy ball milling was effective in decreasing the reaction temperature and increasing the tetragonality.

• 한국재료학회지
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• 제20권11호
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• pp.575-580
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• 2010

The microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of 0.1 mol%$Na_2Ti_6O_{13}$ doped $0.94BaTiO_3-0.06(Bi_{0.5}Na_{0.5})TiO_3$ (BBNT-NT001) ceramics sintered at various temperatures from $1200^{\circ}C$ to $1350^{\circ}C$ were investigated in order to develop eco-friendly PTCR thermistors with a high Curie temperature ($T_C$). Resulting thermistors showed a perovskite structure with a tetragonal symmetry. When sintered at $1200^{\circ}C$, the specimen had a uniform microstructure with small grains. However, abnormally grown grains started to appear at $1250^{\circ}C$ and a homogeneous microstructure with large grains was exhibited when the sintering temperature reached $1325^{\circ}C$. When the temperature exceeded $1325^{\circ}C$, the grain growth was inhibited due to the numerous nucleation sites generated at the extremely high temperature. It is considered that $Na_2Ti_6O_{13}$ is responsible for the grain growth of the $0.94BaTiO_3-0.06(Bi_{0.5}Na_{0.5})TiO_3$) ceramics by forming a liquid phase during the sintering at around $1300^{\circ}C$. The grain growth of the BBNT-NT001 ceramics was significantly correlated with a decrease of resistivity. All the specimens were observed to have PTCR characteristics except for the sample sintered at $1200^{\circ}C$. The BBNT-NT001 ceramics had significantly decreased $\tilde{n}_{rt}$ and increased resistivity jump with increasing sintering temperature at from $1200^{\circ}C$ to $1325^{\circ}C$. Especially, the BBNT-NT001 ceramics sintered at $1325^{\circ}C$ exhibited superior PTCR characteristics of low resistivity at room temperature ($122\;{\Omega}{\cdot}cm$), high resistivity jump ($1.28{\times}10^4$), high resistivity temperature factor (20.4%/$^{\circ}C$), and a high Tc of $157.9^{\circ}C$.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.115.2-115
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• 2003

• 한국세라믹학회지
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• 제22권3호
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• pp.46-52
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• 1985

(Ba0.8. Sr0.2) $TiO_3$ semiconducting ceramic with and without Ti-excess composition were prepared by various sintering temperature. The effects of Ti compositions on the samples were discussed in terms of color micro-structure resistivity at room temperature and the positive temperature coefficient resistivity(PTCR). The 1.02mol Ti-excess composition provides better PTCR properties and has uniform micrositructures with 5-7${\mu}{\textrm}{m}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.17-20
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• 1993

In this paper, the (1-x)($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$-x $Bi_2$$Ti_3$$O_{9}$(x=0,4,6,8[mol.%]) ceramics with paraelectric properties were, fabricated by mixed oxide method. The dielectric and structural properties of ceramics were studied with sintering temperature and addition of $Bi_2Ti_3O_{9}$, and the application for the high - voltage capacitor was investigated. In the specimens with sintering at 1350[$^{\circ}C$], sintered density was showed the highest value of 5.745[g/cm$^3$]. Increasing of sintering temperature, average grain size was increased. The specimen. ($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$sintered at 1350[$^{\circ}C$] showed good dielectric properties and breakdown voltage was showed the highest value of 200[kV]. Temperature coefficient of capacitance was stabilized in specimens added $Bi_2Ti_3O_{9}$ Sintered density. dielectric properties and breakdown voltage ware decreased with increasing the contents of $Bi_2Ti_3O_{9}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.32-32
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• 2008

Microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of $0.9BaTiO_3-0.1(Bi_{0.5}Na_{0.5})TiO_3$ [BaBiNT] ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free high Curie temperature ($T_c$)(>$160^{\circ}C$) PTC thermistor. The BaBiNT ceramics showed a tetragonal perovskite structure, irrespective of the added amount of $Nb_2O_5$. They also have a homogeneous microstructure. The resistivity of BaBiNT ceramics was gradually decreased by doping $Nb_2O_5$, which might be due to $Nb^{+5}$ ions substituting for $Ti^{+4}$ sites. The PTCR characteristics of BaBiNT ceramics appeared when the amount of doped $Nb_2O_5$ exceeded 0.0025mol%. Moreover, the abrupt grain growth was observed for the 0.03mol% $Nb_2O_5$added BaBiNT ceramics. It showed an especially high $T_c$ of approximately $172^{\circ}C$ and good PTCR characteristics of a high $\rho_{max}/\rho_{min}$ ratio ($2.96\times10^3$), a high resistivity temperature factor (11.40/$^{\circ}C$) along with a relatively low resistivity ($3.5\times10^4\Omega{\cdot}cm$).

• 한국세라믹학회지
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• 제35권7호
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• pp.665-670
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• 1998

Ferroelectric anomaly in PbO-{{{{ { {B }_{2 }O }_{3 } }}-{{{{ {TiO }_{3 } }}-BaO glasses which is observed in DAT measurements was in-vestigated together with the effect of BaO content on the shift of Cuire temperature. The temperature where the ferroelectric anomaly apperars on cooling in DTA decreased in proportion with increasing BaO content,. For as-crystallized samples the ferroelectric anomaly was not observed on heating but on cooling whilist for powder samples leached chemically from the crystallized samples both endothermic and ex-otehrmic peaks were observed. This fact suggests that the appearance of the ferroelectric anomaly in DAT largely depends on glassy phases surrounding individual {{{{ {PbTiO }_{3 } }} crystals rather than effects of grain size and crystallinity.

• 한국세라믹학회지
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• 제15권3호
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• pp.140-148
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• 1978

The piezoelectric properties of some perovskite ferroelectric materials have been investigated. The Curie temperature of $Nb^{+5}$ deped $BaTiO_3$ is lowered, and that of $La^{+3}$ doped BaTiO3 varies depending on whether the ionic neautrality of the ceramics is satisfied. The optimum sintered density of BaTiO3 system is obtained when the specimen is sintered for about an hour at 1300-140$0^{\circ}C$ (the optimal sintering temperature of PZT is also about 130$0^{\circ}C$). The electromechanical coupling factor of PZT is reported to be larger than that of $BaTiO_3$ system.