• Electrical & Electronic Materials
• /
• v.10 no.8
• /
• pp.819-829
• /
• 1997

The microwave dielectric materials of the BaO-Nd$_2$O$_3$-TiO$_2$and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system were synthesized by conventional ceramic processing and sintered 1220 to 140$0^{\circ}C$ for 2 hours respectively. Their crystallization and dielectric properties were examined. In the BaO-Nd$_2$O$_3$-TiO$_2$ and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system. Nd$_2$Ti$_2$O$_{7}$ and (Sm, Nd)$_2$Ti$_2$O$_{7}$ were observed as a second phase respectively. The maximum relative dielectric constant were 79,99 for the BaO-Nd$_2$O$_3$-TiO$_2$system and 105.07 for the BaO-(Sm,Nd)$_2$O$_3$-TiO$_2$system and their Q-value were over 2000 at 3GHz.GHz.

• Proceedings of the Korea Crystallographic Association Conference
• /
• 2003.05a
• /
• pp.25-25
• /
• 2003

BaTi₄O/sub 9/계 세라믹스에 저온 소결 조제로 첨가된 lithium-borosilicate계 유리 프리트의 첨가에 따른 상분해 현상을 XRD, TEM에 의하여 분석하였다. 유리 프리트의 첨가가 없는 BaTi₄O/sub 9/계 세라믹스는 첨가량과 열처리 온도에 관계없이 BaTi₄O/sub 9/상과 소량의 TiO₂상만이 관찰되었으나 저온 소결 조제로 사용된 유리 프리트의 첨가량이 증가할수록 BaTi₄O/sub 9/계 세라믹스는 BaTi₄O/sub 9/상 보다 Ti-rich상인 Ba₂Ti/sub 9/O/sub 20/상, BaTi/sub 5/O/sub 11/상, 또는 BaTi/sub 5/O/sub 11/상과 Ba₄Ti₃O/sub 30/상으로 공존하며 분해되는 것을 관찰하였다. 공존하며 분해되는 것을 관찰하였다. 유리 프리트가 10 wt% 첨가시 600℃ 까지는 BaTi₄O/sub 9/상과 TiO₂상으로 존재하였으나 700℃ 전후에서 BaTi/sub 5/O/sub 11/상과 Ba₄Ti/sub 13/O/sub 30/상으로 분해되기 시작하여 875℃에서는 BaTi₄O/sub 9/상이 완전히 분해되어 BaTi/sub 5/O/sub 11/상이 주상으로 Ba₄Ti/sub 13/O/sub 30/상은 이차상으로 존재하는 것을 확인하였다. 또한, 열처리 온도가 증가할수록 Ba₄Ti/sub 13/O/sub 30/상이 상대적으로 감소하고 있는 것도 관찰할 수 있었다.

• Journal of the Korean Chemical Society
• /
• v.38 no.4
• /
• pp.309-318
• /
• 1994

The stable defect structure and the single phase region of La$_2O_3$-modified BaTi$O_3$ have been studied by X-ray diffractometer and scanning electron microscope. The stable defect structure of La$_2O_3$-modified BaTi$O_3$ has been identified as [($Ba^x_{Ba})_{1-2x}(La{\cdot}_{Ba})_{2x}][Ti^x_{Ti})_{1-x/2}(V""_{Ti})_{x/2}]O_3$ which consists of La$^{3+}$ ion substitution for Ba$^{3+}$ ion in the lattice structure and the formation of Ti vacancies for the charge compensation. When 3 mol% of La$_2O_3{\cdot}3/2TiO_3$ was added to BaTi$O_3$, the unit cell structure was transformed from tetragonal to cubic and the solubility limit was about 14 mol%. When La$_2O_3{\cdot}3/2TiO_2$ was added above this solubility limit, the second phase, La$_4Ba_2Ti_5O_{18}$, was formed. In the La$_2O_3$-modified BaTi$O_3$, it was found by the liquid phase sintering process that the sinterability was decreased by excess BaO but increased by excess Ti$O_2$.

• Bulletin of the Korean Chemical Society
• /
• v.16 no.3
• /
• pp.248-251
• /
• 1995

The crystal structure of Ba46-X, Ba46Al92Si100O384 [a= 25.297(1) Å], has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd&bar{3}at 21(1) ℃. The crystal was prepared by ion exchange in flowing stream of 0.05 M Ba(OH)2 aqueous solution for 5 days. The crystal was then dehydrated at 380 ℃ and 2 × 10-6 Torr for 2 days. The structure was refined to the final error indices R1= 0.051 and Rw= 0.054 with 369 reflections for which I > 3σ(I). In this structure, all Ba2+ ions are located at the three different crystallographic sites: fourteen Ba2+ ions are located at site Ⅰ, the centers of the double six rings, two Ba2+ ions lie at site Ⅰ', in the sodalite cavity opposite double six rings(D6R's) and another thirty Ba2+ ions are located at site Ⅱ in the supercage. Two Ba2+ ions are recessed ca. 0.27 Å into the sodalite cavity from their three O(3) oxygen plane and thirty Ba2+ ions are recessed ca. 1.11 Å into the supercage from their three O(2) oxygen planes, respectively (Ba(1)-O(3) = 2.76(1) Å, O(3)-Ba(1)-O(3) = 180(0)°, Ba(2)-O(3) = 2.45(1) Å, O(3)-Ba(2)-O(3) = 108(1)°, Ba(3)-O(2)=2.65(1) Å, and O(2)-Ba(3)-O(2)=103.9(4)°).

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.4
• /
• pp.625-628
• /
• 2008

Ba-Zn ferrite powders for electromagnetic insulator were synthesized by self-propagating high-temperature synthesis(SHS) with a reaction of $xBaO_2+(1-x)ZnO+0.5Fe_2O_3+Fe{\rightarrow}Ba_xZn_{1-x}Fe_2O_4$. In this study, phase indentification of SHS products was carried out by using x-ray diffractometry and quasi-nano sized Ba-Zn powders were prepared by a pulverizing process. SHS mechanism was studied by thermodynamical analysis about oxidation reaction among $BaO_2,\;ZnO,\;Fe_2O_3$, and Fe. As oxygen pressure increases from 0.25 MPa to 1.0 MPa, the SHS reactions occur well and make clearly the SHS products. X-ray analysis shows that final SHS products formed with the ratio of $BaO_2/ZnO$ of 0.25, 1.0 and 4.0, are mainly $Ba_xZn_{1-x}Fe_2O_4$. Based on thermodynamical evaluation, the heat of formation increases in the order of $ZnFe_2O_4,\;BaFe_2O_4$, and $Ba_xZn_{1-x}Fe_2O_4$. This supports that $Ba_xZn_{1-x}Fe_2O_4$ phase is predominately formed during SHS reaction. The SHS reactions to form $Ba_xZn_{1-x}Fe_2O_4$ depends on oxygen partial pressure, and the heat of formation during the SHS reaction. The SHS reactions tends to occur well with increasing the oxygen partial pressure and BaO2/ZnO ratio in the reactants This means that the SHS reaction for the formation of Ba-Zn ferrite includes the reduction of BaO2/ZnO and the oxidation of Fe. $Ba_xZn_{1-x}Fe_2O_4$ powders after pulverizing is agglomeratedwith a size of about $50{\mu}m$, in which quasi-nano sized particles with about 300nm are present.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.194-196
• /
• 2004

$BaTiO_3/SrTiO_3$ heterolayered thick films on the $Al_2O_3$ substrate by screen printing method with stacking periodicity. The stacking periodicity of $BaTiO_3/SrTiO_3$ heterolayer structure was varied from $(BaTi_O_3)_1/(SrTiO_3)_1$ to $(BaTi_O_3)_3/(SrTiO_3)_3$. The total thickness of the $BaTiO_3/SrTiO_3$ films was about $120{\mu}m$. There was an interdiffusion at the interface of the $BaTiO_3$ and $SrTiO_3$ layers. The dielectric constant of $BaTiO_3/SrTiO_3$ heterolayered thick films was increased with decreasing stacking periodicity of the $BaTiO_3/SrTiO_3$. The dielectric constant of the ($(BaTi_O_3)_1/(SrTiO_3)_1$ herterolayered thick films was about 1780.

• Journal of the Korean Ceramic Society
• /
• v.38 no.10
• /
• pp.881-885
• /
• 2001

Kinetics and mechanisms of intermediate phases formation in $Ba(Mg_{1/3}Ta_{2/3})O_3$, obtained by a solid state reaction were studied. $Ba{Ta_2}{O_6}$ and ${Ba_4}{Ta_2}{O_9}$ as intermediate products were first formed at $700^{\circ}C$. $Ba(Mg_{1/3}Ta_{2/3})O_3$ was appeared at $800^{\circ}C$. Several reactions take place on heating process. $Ba{Ta_2}{O_6}$ is found at the first stage of the reaction, and then $Ba{Ta_2}{O_6}$ or ${Ba_4}{Ta_2}{O_9}$ react with MgO to form $Ba(Mg_{1/3}Ta_{2/3})O_3$. The reaction of $Ba(Mg_{1/3}Ta_{2/3})O_3$ formation does not complete until fired at $1350^{\circ}C$ for 60 min. The kinetics of solid-state reaction between powdered reactants was controlled by diffusion mechanism, and can be explained by the Jander's model for three-dimensional diffusion.

• Korean Journal of Materials Research
• /
• v.31 no.2
• /
• pp.61-67
• /
• 2021

Fabrication of a ferromagnetic composite powder for the magnesium and BaFe12O19 system by mechanical alloying (MA) is investigated at room temperature. Mixtures of Mg and BaFe12O19 powders with a weight ratio of Mg:BaFe12O19 = 4:1, 3:2, 2:3 and 1:4 are used. Optimal MA conditions to obtain a ferromagnetic composite with fine microstructure are investigated by X-ray diffraction, differential scanning calorimetry (DSC) and vibrating sample magnetometer (VSM) measurement. It is found that Mg-BaFe12O19 composite powders in which BaFe12O19 is dispersed in Mg matrix are successfully produced by MA of BaFe12O19 with Mg for 80 min. for all compositions. Magnetization of Mg-BaFe12O19 composite powders gradually increases with increasing the amounts of BaFe12O19, whereas coercive force of MA powders gradually decreases due to the refinement of BaFe12O19 powders with MA time for all compositions. However, it can be seen that the coercivity of Mg-BaFe12O19 MA composite powders with a weight ratio of Mg:BaFe12O19=4:1 and 3:2 for MA 80 min. are still high, with values of 1260 Oe and 1320 Oe compared to that of Mg:BaFe12O19=1:4. This clearly suggests that the refinement of BaFe12O19 powders during MA process for Mg:BaFe12O19=4:1 and 3:2 tends to be suppressed due to ductile Mg powders.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.1
• /
• pp.21-27
• /
• 2018

Synthesis of ferromagnetic composite materials for the $Cu-BaFe_{12}O_{19}$ system by mechanical alloying (MA) has been investigated at room temperature. A mixture of copper and barium ferrite with a weight ratio of $Cu:BaFe_{12}O_{19}=4:1$, 3 : 2, 2 : 3 and 1 : 4 was used. It is found that $Cu-BaFe_{12}O_{19}$ composite powders in which $BaFe_{12}O_{19}$ is dispersed in copper matrix are successfully produced by mechanical alloying of $BaFe_{12}O_{19}$ with Cu for 80 min. in all composition. The change in X-ray diffraction patterns and magnetic properties reflects the details for the formation of ferromagnetic metal matrix composite of pure Cu and $BaFe_{12}O_{19}$ during mechanical alloying. Magnetization of $Cu-BaFe_{12}O_{19}$ composite powders gradually increases with increasing the amounts of barium ferrite, whereas coercive force of MA powders gradually decreases due to the refinement of barium ferrite powders with ball milling. However, it can be seen that the coercivity of $Cu-BaFe_{12}O_{19}$ MA composite powders with a weight ratio of $Cu:BaFe_{12}O_{19}=4:1$ and 3 : 2 ball-milled for 80 min. is still high value of 1400 Oe and 1450 Oe, respectively suggesting that the refinement of barium ferrite powders during ball milling process tend to be suppressed due to the ductile copper.

• Journal of the Korean Ceramic Society
• /
• v.32 no.7
• /
• pp.761-768
• /
• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.