• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.196-196
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• 2008

We have investigated that the effect of post annealing on the structural and electrical properties of $Ba_{0.5}Sr_{0.5}TiO_3$ thin films. The BST thin films were deposited on n-type 4H-silicon carbide(SiC) using pulsed laser deposition (PLD). The deposition was carried out in oxygen ambient 100mTorr for 5 minutes, which results in about 300nm-thick BST films. For the BST/4H-SiC, 200nm thick silver was deposited on the BST films bye-beam evaporation. The X-ray diffraction patterns of the BST films revealed that the crystalline structure of BST thin films has been improved after post-annealing at $850^{\circ}C$ for 1 hour. The root mean square (RMS) surface roughness of the BST film measured by using a AFM was increased after post-annealing from 5.69nm to 11.49nm. The electrical properties of BST thin film were investigated by measuring the capacitance-voltage characteristics of a silver/BST/4H-SiC structure. After the post-annealing, dielectric constant of the film was increased from 159.67 to 355.33, which can be ascribed to the enhancement of the crystallinity of BST thin films.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.460-464
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• 2003

The barium strontium titannate ((Ba,Sr)TiO$_3$:BST) thin films were etched in an inductively coupled plasma (ICP) as a function of CF$_4$/Ar gas mixing ratio. Under CF$_4$(20%)/Ar(80%), the maximum etch rate of the BST films was 400 $\AA$/min. Etching products were redeposited on the surface of BST and then the nature of crystallinity were varied. Therefore, we investigated the etched surface of BST by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The plasma damages were evaluated in terms of leakage current density by Agilent 4145C and dielectric constant by HP 4192 impedance analyzer. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. After annealing at 600 $^{\circ}C$ for 10 min in $O_2$ ambient, the leakage current density, roughness and nonvolatile etch byproducts reduced. From this results, the plasma induced damages were recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.103-106
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• 2002

The applicability of models based on fractal morphology to characterize $(Ba\;Sr)TiO_{3}$ thin film surfaces was investigated. The fractal morphology of coated barium strontium titan oxide thin film surfaces was described using fractal dimension from scanning electro microscopy image. The $(Ba\;Sr)TiO_{3}$ coating were deposited on silicon wafers using $(Ba\;Sr)TiO_{3}$ solution and spin coater. BST solution was composited by mol ratio, and then spin-coated from 3 times to 5 times coating on $Pt/SiO_{2}/Si$ substrate. Qualitative thin film analysis was performed with scanning electro microscopy (SEM), and surfaces parameters such as average grain diameter, roughness exponent and fractal dimension were determined.

• Korean Journal of Materials Research
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• v.6 no.5
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• pp.449-456
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• 1996

BaO, SrCI2.6H2O 그리고 Ti(OPri)4를 출발 원료로 사용하여 균일한 BaxSr1-xTiO3(BST) 솔을 합성하였고, BST 박막을 회전 코팅 법으로 Si 및 Pt/Ti/SiO2/Si 기판위에 제조하였다. 적외선 및 NMR 스펙트럼 분석으로 킬레이션 조제로 사용한 acetylacetone(AcAc)이 엔올 형태로 Ti-알콕사이드와 결합하여 솔 안정화에 기여함을 확인하였다. Xedrogel에 대한 DT/TGA 및 적외선 스펙트럼 결과로부터 페로브스카이트 상생성이 $600^{\circ}C$ 이상에서 이루어짐을 관찰하였다. $700^{\circ}C$에서 열처리한 박마은 -300(10 KHz)의 상대유전율을 나타내었고, 결정립의 저항 및 입계의 병렬 RC 성분으로 등가회로를 구성할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.205-206
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• 2006

(BaSr)$TiO_3$ thick films were prepared by tape casting method, using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties. With MgO additives, the sintering density was 5.8 $g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. Dielectric loss be on the decrease because the interface is not a pore. BST sample be applicable on tunable device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.28-32
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• 2000

Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.

• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.492-498
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• 2001

Ba$_{0.5}$Sr$_{0.5}$TiO$_3$타겟을 이용 Pt/Ti/SiO/Si 기판 위에 R.F magnetron sputtering 방법으로 BST 박막을 증착하여 다양한 열처리 조건에 따른 BST 박막의 전기적 성질(정전용량, 누설전류)에 대해 박막의 결정성과 미세구조의 연관성에 대하여 연구하였다. BST 박막의 유전상수는 grain size에 영향 받으며, 열처리 온도가 증가할수록 유전상수는 증가함을 보였고 온도에 따른 누설전류는 저전압 영역에서는 Hopping conduction, 고전압 영역에서는 Schottky conduction mechanism을 따르는 것으로 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.122-125
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• 1999

(Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature and oxygen pressure by Pulsed Laser Deposition(PLD). Energy Dispersive Spectroscopy(EDS) proved that BST thin films prepared by PLD have almost the same stoichiometric composition as the BST target materials. This BST thin films were fully crystallized at $650^{\circ}C$, 300mTorr oxygen pressure and showed a maximum dielectric constant value of $\varepsilon$$_{t}$=684 and dielectric loss was 0.01 at 75$0^{\circ}C$, 300mTorr oxygen pressure.ssure.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.392-398
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• 2006

The properties of tunable dielectric materials on RF frequency band are important high tunability and low loss for RF variable devices, variable capacitor, phased array antenna and other components application. Various composite of BST(barium strontium titanate) ratio combined with other non-electrical active oxide ceramics have been formulated for such uses. We present the tunable properties and Curie temperature on BST thick films. The grain growth of the weight ratio of $BaTiO_3$ increased. This can be explained by the substitute $Sr^{2+}$ ion for $Ba^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$in the $BaTiO_3-SrTiO_3$ system, because of decreasing the lattice constant. Also, the dielectric constant, tunability and K-factor of $(Ba_xSr_{1-x})TiO_3$ at over the Curie temperature decreased, at over the $60^{\circ}C$ fixation, maximum dielectric constant at Curie temperature and hence sharper phase transformation occurred at Curie temperature. The result were interpreted as a process of internal stress relaxation resulting form the increase of $90^{\circ}$ domains induced the BST. As a result, It is concluded that over the Curie temperature, frequency response and DC field effect for the tunable properties of BST thick film are suppressed by the transition broadening. For the application of tunable devices, that the curie temperature was investigated to be increased.