• The Bulletin of The Korean Astronomical Society
• /
• v.41 no.1
• /
• pp.60.1-60.1
• /
• 2016

태양과 같은 별의 형성기작은 질량이 큰 별의 형성기작에 비해 비교적 잘 연구되어 왔다고는 하지만, 이 또한 온전한 이해와는 거리가 먼 상황이며 여전히 논란의 대상이다. IRAS, Spitzer와 같은 적외선우주망원경으로 얻어진 원시성의 광도함수는 일반적으로 받아들여졌던 별탄생 이론으로 설명되지 못한다는 것이 밝혀졌고, 이에 새로운 별탄생 이론이 필요하게 되었다. 새롭게 받아들여지고 있는 별탄생 모델은 Episodic Accretion 모델로서, 원시행성계원반에서 원시성으로 질량 강착이 간헐적이면서 폭발적으로 일어난다는 것이다. 이러한 모델의 관측적 증거의 하나는 FU Orionis와 같은 천체로서, T-Tauri 단계에 있는 원시성이 본래의 밝기보다 약 100배, 즉 가시광에서 5등급 이상 폭발적으로 밝아진 천체이다. 질량강착의 과정은 행성형성의 초기조건을 결정하는 원시행성계원반의 물리적, 화학적 특성을 결정하므로, 그 이해가 중요하다. 따라서 본 연구팀은 Episodic Accretion이 원시행성계원반과 원시항성풍의 형성과 진화에 어떤 역할을 하는지 연구하기 위하여, 보현산 천문대의 고분산 분광기인 BOES를 이용하여, 최근에 폭발을 일으킨 원시성인 HBC 722와 2MASS J06593158-0405277을 모니터링 관측을 해왔으며, 이전에 알려진 6개의 FU Orionis 형 천체들도 관측하였다. 여기서는 그 결과를 발표하고자 한다.

• Proceedings of KOSOMES biannual meeting
• /
• 2005.05a
• /
• pp.155-159
• /
• 2005

Analysis target ship is not introduced yet in domestic as steel yacht that is getting into the spotlight by leisure life in Australia or Japan. Sailing yacht or Yacht for leisure time made of FRP into controlling power fare mainly and the design and made of latest fishing boat and something of domestic is consisting mainly. To need investigated for concept is various kinds overall strength as that use mainly steel wire material structurally of steel yacht by small crafts about Longi strength, Transe strength portion even of design safety factor at subject to do Rule's allowable stress enough stable structure accomplish. But it is assessment of part intensity that become refer to most in small size ship.

• Journal of Periodontal and Implant Science
• /
• v.28 no.3
• /
• pp.431-451
• /
• 1998

4 beagle dogs aged over one and half years and weighed 15 to 16 Kg were utilized in this study. Experimental dehiscent defects were made in the mandibular edentulous area after removal of lower premolar. e-PTFE membrane resorbable membrane, and PDGF-BB-loaded resorbable membrane were covered at the dehiscent defects around the dental implants respectively. Animal was sacrificed at 1, 2, 3 months respectively. Non-decalicifed specimens were made and mutiple-stained for light microscopic study. The results were as follows: 1. Dehiscent defects around the implant installed in the beagle dog were an excellent defect model for studying guided bone regeneration. 2. Fibroblasts penetrated into expanded-PTFE membrane was observed and inflammatory cell infiltration was also observed around the membrane. 3. Resorbable membrane was degradaded and resorbed at 1 month after application to the dehiscent defect. Though multinucleated giant cells were observed adjacent to the membrane, that had no reverse effect on the boe regeneration. 4. PDGF-BB-Ioaded resorbable membrane was same capability as the resorbable membrane and e-PTFE membrane in the guided bone regeneration. 5. PDGF-BB-Ioaded resorbable membrane-applied site was better than resorbable membrane-applied site in the speed and maturity of bone formation. Within the above results, it was suggested that PDGF-BB-Ioaded resorbable membrane might have same bone regeneration capacity as nonresorbable membrane in the dehisced implant of the beagle dog and potentiality to use in human subjects.

• Journal of Ginseng Research
• /
• v.41 no.1
• /
• pp.52-59
• /
• 2017

Background: Korean Red Ginseng extract (KRG, Panax ginseng Meyer) and its constituents have been used for treating diabetes. However, in diet-induced obese mice, it is unclear whether KRG can enhance the glucose-lowering action of rosiglitazone (ROSI), a peroxisome proliferator-activated receptor gamma synthetic activator. Methods: Oral glucose tolerance tests (oGTTs) were performed after 4 days of treatment with a vehicle (CON), KRG [500 mg/kg body weight (b.w.)], ROSI (3.75 mg/kg b.w, 7.5 mg/kg b.w, and 15 mg/kg b.w.), or ROSI and KRG (RK) in obese mice on a high-fat diet. Adipose tissue morphology, crown-like structures (CLSs), and inflammation were compared by hematoxylin-eosin staining or quantitative reverse transcription polymerase chain reaction. Results: The area under the glucose curve (AUC) was significantly lower in the RK group (15 mg/kg b.w. and 500 mg/kg b.w. for ROSI and KRG, respectively) than in the CON group. There was no significant difference in the AUC between the CON and the other groups. Furthermore, the AUC was significantly lower in the RK group than in the ROSI group. The expression of the Ccl2 gene and the number of CLSs were significantly reduced in the RK group than in the CON group. Conclusion: Our results show a potential enhancement of ROSI-induced improvement of glucose regulation by the combined treatment with KRG.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.3
• /
• pp.245-248
• /
• 2020

The wettability of silicon carbide (SiC) crystal, which has 6H-SiC and 4H-SiC regions prepared using the physical vapor transport (PVT) method, is quantitatively analyzed using dispensed deionized (DI) water droplets. Regardless of the polytypes in SiC, the average of five contact angle measurements showed a difference of about 6° between the Si-face and C-face. The contact angle on the Si-face (C-face) is measured after the removal of the native oxide using BOE (6:1), and revealed a significant decrease of the contact angle from 74.9° (68.4°) to 47.7° (49.3°) and from 75.8° (70.2°) to 51.6° (49.5°) for the 4H-SiC and 6H-SiC regions, respectively. The contact angle of the Si-face recovered over time during room temperature oxidation in air; in contrast, that of the C-face did not recover to the initial value. This study shows that the contact angle is very sensitive to SiC surface polarity, specific surface conditions, and process time. Contact angle measurements are expected to be a rapid way of determining the surface polarity and wettability of SiC crystals.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.241.2-241.2
• /
• 2013

최근, 비정질 산화물 반도체 thin film transistor (TFT)는 수소화된 비정질 실리콘 TFT와 비교하여 높은 이동도와 큰 on/off 전류비, 낮은 구동 전압을 가짐으로써 빠른 속도가 요구되는 차세대 투명 디스플레이의 TFT로 많은 연구가 진행되고 있다. 한편, 기존의 MOSFET 제작 시 우수한 박막을 얻기 위해서는 $500^{\circ}C$ 이상의 높은 열처리 온도가 필수적이며 이는 유리 기판과 플라스틱 기판에 적용하는 것이 적합하지 않고 높은 온도에서 수 시간 동안 열처리를 수행해야 하므로 공정 시간 및 비용이 증가하게 된다는 단점이 있다. 따라서, 본 연구에서는 RF sputter를 이용하여 증착된 비정질 InGaZnO pesudo MOSFET 소자를 제작하였으며, thermal 열처리와 microwave 열처리 방식에 따른 전기적 특성을 비교 및 분석하고 각 열처리 방식의 열처리 온도 및 조건을 최적화하였다. P-type bulk silicon 위에 산화막이 100 nm 형성된 기판에 RF 스퍼터링을 이용하여 InGaZnO 분말을 각각 1:1:2mol% 조성비로 혼합하여 소결한 타겟을 사용하여 70 nm 두께의 InGaZnO를 증착하였다. 연속해서 Photolithography 공정과 BOE(30:1) 습식 식각 과정을 이용해 활성화 영역을 형성하여 소자를 제작하였다. 제작 된 소자는 pseudo MOSFET 구조이며, 프로브 탐침을 증착 된 채널층 표면에 직접 접촉시켜 소스와 드레인 역할을 대체하여 동작시킬 수 있어 전기적 특성을 간단하고 간략화된 공정과정으로 분석할 수 있는 장점이 있다. 열처리 조건으로는 thermal 열처리의 경우, furnace를 이용하여 각각 $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$에서 30분 동안 N2 가스 분위기에서 열처리를 실시하였고, microwave 열처리는 microwave를 이용하여 각각 400 W, 600 W, 800 W, 1000 W로 20분 동안 실시하였다. 그 결과, furnace를 이용하여 열처리한 소자와 비교하여 microwave 를 통해 열처리한 소자에서 subthreshold swing (SS), threshold voltage (Vth), mobility 등이 개선되는 것을 확인하였다. 따라서, microwave 열처리 공정은 향후 저온 공정을 요구하는 MOSFET 제작 시의 훌륭한 대안으로 사용 될 것으로 기대된다.

• Journal of the Korean Institute of Gas
• /
• v.25 no.6
• /
• pp.98-105
• /
• 2021

Currently, the government's announcement of the Korean version of the New Deal Comprehensive Plan ('20.7.14), expanding the supply of hydrogen production and charging facilities, and major companies are rapidly building related facilities such as liquefied hydrogen plants and charging stations. However, safety standards for production, storage facilities, transportation, and utilization of liquefied hydrogen value chains in Korea are insufficient, and safety technologies and safety standards over the entire period of liquefied hydrogen are urgently needed. Accordingly, the Korea Gas Safety Corporation is trying to realize a safe hydrogen economy in Korea by enacting safety standards over the entire period, including liquefied hydrogen plants

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.353-353
• /
• 2012

InAs nanowires (NWs)는 나노소자스케일의 전자소자나 광전자소자를 위한 기본 단위(building block)로 사용될 수 있고, 1차원적 나노구조를 가지면서 나타나는 특별한 전기적, 광학적 특성으로 인해 전계효과 트랜지스터, 레이저, 광발광 다이오드, 가스 검출 센서 등의 많은 응용소자로 활용을 위한 연구가 진행되 있으며 주로 실리콘, 갈륨비소 기판 위에 금속유기기상 증착(MOCVD) 또는 분자선 증착 (MBE)을 이용하여 선택적 수직배열 성장 조절을 위한 연구와 특성 평가 연구가 주로 이뤄지고 있다. 본 연구에서는 InAs NWs를 MBE 장치를 이용하여 Si(111) 기판 위에 Au와 같은 촉매를 사용하지 않고 Si과 InAs의 큰 격자 불일치로 인하여 성장되는 Volmer-weber 성장 모드를 이용 하였다. InAs NW 성장모드는 Si ($5.4309{\AA}$)과 InAs ($6.0584{\AA}$) 사이에 큰 격자상수 차이를 이용하게 되는데 촉매를 사용하여 성장하는 일반적인 이종 화합물 반도체 성장 모드와 달리 액상상태가 존재하지 않고 바로 In과 As이 Si 기판 위를 이동하여 수직방향으로 성장이 이루어지는 vaporsolid(VS) 모드이다. InAs NW V-S 성장 모드는 Si 기판과의 격자 상수차에 의한 스트레스를 이용해야 하므로 Si기판 위에 존재하는 native oxide는 완벽히 제거되어야 한다. InAs NW 최적 성장 조건을 찾기위해 V/III raitio, 성장 온도, 기판표면처리 등의 성장 변수를 변화 시켜가며 실험을 수행하였다. Native oxide를 제거하기 위하여 HF와 buffered oxide etchant (BOE)를 사용하였다. InAs NWs 성장조건은 Indium flux를 고정 시키고 V/III ratio는 50~400까지 변화를 주었다. V/III ratio를 200으로 고정을 시키고 성장온도를 $375{\sim}470^{\circ}C$에서 성장 하였다. 이 때 InAs NWs는 $430^{\circ}C$에서 가장 높은 밀도와 aspect ratio를 얻을 수 있었다. Arsenic flux에 대해서는 많을 수록 좋은 aspect ratio를 얻을 수 있었다. 하지만 InAs 구조의 절대 부피는 거의 같다는 것을 확인 할 수 있었고 이는 온도와 V/III ratio가 Indium adatom의 surface migration length에 대하여 중요한 요소로 작용되는 것을 알 수 있었다.

• Horticultural Science & Technology
• /
• v.19 no.4
• /
• pp.459-464
• /
• 2001

Leaf disks from cultivar 'Kennebec' and one selection line (ND 860-2) were cultured on Murashige-Skoog medium with various combinations of indole acetic acid (IAA) and zeatin riboside. Shoots, roots and callus were induced at various combinations of plant growth regulator levels. The medium containing $3.5mg{\cdot}L^{-1}$ IAA and $4.0mg{\cdot}L^{-1}$ zeatin riboside produced the most plantlets. Rooted regenerants were grown in the greenhouse. The growth of regenerated plants obtained from the MS medium supplemented with $7.0mg{\cdot}L^{-1}$ IAA and $3.0mg{\cdot}L^{-1}$ zeatin riboside was significantly greater than those grown from nodal expalnts. In ND 860-2, a leaf chimera with chlorophyll deficient (light yellow) sectors was found in plants regenerated fiom leaf disks (grown on MS medium supplemented with $3.5mg{\cdot}L^{-1}$ IAA and $3.0mg{\cdot}L^{-1}$ zeatin riboside) but not in plants grown from nodal explants. The phenotypic variability was also observed in the tuber number, size and weight.

• The Korean Journal of Physiology and Pharmacology
• /
• v.1 no.6
• /
• pp.681-690
• /
• 1997

Loss of synaptic transmission and accumulation of extracellular $K^+([K^+]_O)$ are the key features in ischemic brain damage. Here, we examined the effects of several $K^+$channel modulators on the early ischemic changes in population spike (PS) and $[K^+]_o$ in the CA1 pyramidal layer of the rat hippocampal slice using electrophysiological techniques. After onset of anoxic aglycemia (AA), orthodromic field potentials decreased and disappeared in $3.3{\pm}0.22\;min$ $(mean{\pm}SEM,\;n=40)$. The hypoxic injury potential (HIP), a transient recovery of PS appeared at $6.0{\pm}0.25\;min$ (n=40) in most slices during AA and lasted for $3.3{\pm}0.43\;min$. $[K^+]_o$ increased initially at a rate of 0.43 mM/min (Phase 1) and later at a much faster rate (12.45 mM/min, Phase 2). The beginning of Phase 2 was invariably coincided with the disappearance of HIP. Among $K^+$ channel modulators tested such as 4-aminopyridine (0.03, 0.3 mM), tetraethylammonium (0.1 mM), NS1619 $(0.3{\sim}10\;{\mu}M)$, niflumic acid (0.1 mM), glibenclamide $(40\;{\mu}M)$, tolbutamide $(300\;{\mu}M)$ and pinacidil $(100\;{\mu}M)$, only 4-aminopyridine (0.3 mM) induced slight increase of $[K^+]_o$ during Phase 1. However, none of the above agents modulated the pattern of Phase 2 in $[K^+]_o$ in response to AA. Taken together, the experimental data suggest that 4-aminopyridine-sensitive $K^+$channels, large conductance $Ca^{2+}-activated$ $K^+$ channels and ATP-sensitive $K^+$ channels may not be the major contributors to the sudden increase of $[K^+]_o$ during the early stage of brain ischemia, suggesting the presence of other routes of $K^+$ efflux during brain ischemia.