• Journal of Ceramic Processing Research
• /
• v.17 no.7
• /
• pp.763-767
• /
• 2016

The structural characterization of cubic boron nitride (c-BN) thin films was performed using a B4C target in a radio-frequency magnetron sputtering system. The deposition processing conditions, including the substrate bias voltage, substrate temperature, and base pressure were varied. Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to analyze the crystal structures and chemical binding energy of the films. For the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V to -600 V. Less c-BN fraction was observed as the deposition temperature increased, and more c-BN fraction was observed as the base pressure increased.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.40 no.1
• /
• pp.69-76
• /
• 1995

Cold acclimation involves changes in gene expression. BN28 and BN115 are two genes which are regulated by cold temperature and assumed having roles in cold acclimation. The objectives of this experiment was to explore the expression of BN28 and BN115 under field conditions. Six winter cultivars were planted at three different dates during the fall. The expression of the genes was determined by northern blot analysis of total RNA taken from leaves 15 to 30 day-intervals after planting. The expression of the two genes was detected within 15 days after planting well before onset of freezing tolerance in plants. This suggestes either their expression was a prerequisite of the freezing tolerance or their expression was regulated by other environmental factors as well as temperature. Two genes showed a different expression pattern suggesting they had a different regulatory system. Although timecourse increase in expression of the cold-regulated genes was matched with increase in freezing tolerance, the difference of expression in cultivar level at specific times of measurement was not correlated with freezing tolerance at the moment.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.18 no.4
• /
• pp.292-303
• /
• 1998

Recent study has demonstrated that some magnetic properties are sensitive to the microstructural state of material. The ASTM A 508 Gr. 3 reactor pressure vessel steel has various microstructural changes including martensitic and bainitic phases, and various sizes of grain and precipitates in the weld heat-affected zone (HAZ). To correlate the microstructural state with Barkhausen noise (BN), specimens were prepared through simulating various weld thermal cycles using a thermal simulator. The conventional magnetic properties, i.e. coercive force, remanence and maximum induction, did not change significantly, whereas the BN amplitude and energy during a magnetization cycle changed markedly with microstructural state. The BN increased with increasing grain and carbide sizes, and the tempered bainite structure showed higher BN parameter than tempered martensite.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.185.2-185.2
• /
• 2014

We have studied the atomic and electronic structure of graphene nanoribbons (GNRs) on a hexagonal boron nitride (h-BN) sheet with intercalated atoms using first-principles calculations. The h-BN sheet is an insulator with the band gap about 6 eV and then it may a good candidate as a supporting dielectric substrate for graphene-based nanodevices. Especially, the h-BN sheet has the similar bond structure as graphene with a slightly longer lattice constant. For the computation, we use the Vienna ab initio simulation package (VASP). The generalized gradient approximation (GGA) in the form of the PBE-type parameterization is employed. The ions are described via the projector augmented wave potentials, and the cutoff energy for the plane-wave basis is set to 400 eV. To include weak van der Waals (vdW) interactions, we adopt the Grimme's DFT-D2 vdW correction based on a semi-empirical GGA-type theory. Our calculations reveal that the localized states appear at the zigzag edge of the GNR on the h-BN sheet due to the flat band of the zigzag edge at the Fermi level and the localized states rapidly decay into the bulk. The open-edged graphene with a large corrugation allows some space between graphene and h-BN sheet. Therefore, atoms or molecules can be intercalated between them. We have considered various types of atoms for intercalation. The atoms are initially placed at the edge of the GNR or inserted in between GNR and h-BN sheet to find the effect of intercalated atoms on the atomic and electronic structure of graphene. We find that the impurity atoms at the edge of GNR are more stable than in between GNR and h-BN sheet for all cases considered. The nickel atom has the lowest energy difference of ~0.2 eV, which means that it is relatively easy to intercalate the Ni atom in this structure. Finally, the magnetic properties of intercalated atoms between GNR and h-BN sheet are investigated.

• Transactions of the Society of Information Storage Systems
• /
• v.3 no.3
• /
• pp.129-134
• /
• 2007

Boron nitride (BN) is a highly attractive material for wear resistant applications of mechanical components. BN is super hard and it is the second hardest of all known materials. It also has a high thermal stability, high abrasive wear resistance, and in contrast to diamond, BN does not react with ferrous materials. The motivation of this work is to investigate the tribological properties of BN for potential applications in ultra-precision components for data storage, printing, and other precision devices. In this work, the wear characteristics of BN thin films deposited on DLC or Ti buffer layer with silicon substrate using RF-magnetron sputtering technique were analyzed. Wear tests were conducted by using a pin-on-disk type tester and the wear tracks were measured with a surface profiler. Experimental results showed that wear characteristics were dependent on the sputtering conditions and buffer layer. Particularly, BN coated on DLC layer showed better wear resistant behavior. The range of the wear rates for the BN films tested in this work was about 20 to $100{\mu}m^3$/cycle.

• Korean Journal of Materials Research
• /
• v.3 no.4
• /
• pp.381-387
• /
• 1993

The silicon oxynitride bonded $Si_3N_4-BN$ composite has been developed based on the selective oxidation behavier of $Si_3N_4$ over BN. The silicon oxynitride phase converted to the reaction between $Si_3N_4$ and $SiO_2$ formed on $Si_3N_4$ powder surface during oxidation treatment at the sintering temperature. The developed composite has excellent high-temperature strength, thermal shock resistance, precision machinability and corrosion resistance to the molten steel. The developed composite may therefore be used as, for example, break ring materials in continuous casting of steel.

• Journal of the Korean Magnetics Society
• /
• v.19 no.2
• /
• pp.43-46
• /
• 2009

The magnetic and structural properties of the (8, 0) BN nanotubes with transition metals (TM) of Fe, Co, or Ni substitution for B or N were investigated using a first-principles calculation. It was found that TM substitution makes the cross section being distorted and the bond length TM-B or TM-N being longer than that of the original B-N one. The magnetic moment is larger for the TM substitution for B than one for N, and it is mainly due to the 3d electrons of TM atoms.

• Composites Research
• /
• v.27 no.3
• /
• pp.83-89
• /
• 2014

The purpose of this study is to improve the strength and thermal conductivity of polybutylene terephthalate (PBT) by embedding various additives. Specimens were prepared using PBT pellets embedded with glass fibers (GF) and boron nitride (BN) powders. The test results showed that tensile strength decreased, and thermal conductivity increased with increasing BN contents. with thermal shock cycles conducted, unfilled PBT showed a considerable decrease in failure strain and strength, whereas strength and thermal conductivity of glass fiber and BN particle-embedded PBT had little differeces. With increasing BN, the thermal conductivity of PBT composites was highly improved.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2013.05a
• /
• pp.97-97
• /
• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• Journal of the Korean Ceramic Society
• /
• v.45 no.1
• /
• pp.75-81
• /
• 2008

In this study, machining characteristics of AIN-hBN composites were evaluated in end-milling process. As a first step, AIN-hBN composite specimens with various hBN contents were prepared using hot press method. Material properties of the composites, such as relative density, Young's modulus and fracture toughness, were measured and compared. Then, a series of end-milling experinients were performed under various cutting conditions by changing cutting speed, depth-of-cut and feed rate. Cutting force variations were measured using a tool dynamometer during the cutting experiments. Machined surfaces of the specimens were observed using SEM and a surface pro filer to investigate the surface integrity changes. The cutting force decreased with an increases of hBN content. The cutting process was almost impossible for monolithic AIN, owing to severe chipping. In contrast, at high content of hBN, surface damage and chipping decreased, and better surface roughness can be obtained.