• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.20.2-20.2
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• 2011

BMNO dielectric materials with a pyrochlore structure have been chosen and they have quite high dielectric constants about 210 for the bulk material. In the case of thin films, 200-nm-thick BMNO films deposited at room temperature showed a low leakage current density of about $10^{-8}\;A/cm^2$ at 3 V and a dielectric constant of about 45 at 100 kHz. Because high dielectric constant BMNO thin films kept an amorphous phase at a high temperature above $900^{\circ}C$. High dielectric constant BMNO thin films grown at room temperature have many applications for flexible electronic devices. However, because the dielectric constant of the BMNO films deposited at room temperature is still low, percolative BMNO films (i.e., those were grown in a pure argon atmosphere) sandwiched between ultra-thin BMNO films grown in an oxygen and argon mixture have greater dielectric constants than standard BMNO films. However, they still showed a leakage problem at a high voltage application. Accordingly, a new nano-structure that uses BMNO was required to construct the films with a dielectric constant higher than that of its bulk material. The fundamental reason that the BMNO-Bi nano-composite films grown by RF-Sputtering deposition had a dielectric constant higher than that of the bulk material was addressed in the present study. Also we used the graphene as bottom electrode instead of the Cu bottom electrode. At first, we got the high leakage current density value relatively. but through this experiment, we could get improved leakage current density value.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.387-391
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• 2012

Graphene was fabricated onto Ni/Si substrate using a rapid-thermal pulse CVD and they were transferred onto the Ti/PES flexible substrate. For top electrode applications of the BMNO dielectric films, graphene was patterned using a argon plasma. Through an AFM image and a leakage current density of the BMNO films grown onto various bottom electrodes before and after bending test, BMNO films grown onto the graphene bottom electrode showed no change of the microstructure and the leakage current density after the bend.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.23-23
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• 2010

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

• 전기전자학회논문지
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• 제19권4호
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• pp.486-490
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• 2015

기존의 MOS 구조를 갖는 온도 센서가 가지는 누설 전류 문제를 해결하기 위하여 제안된 $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) 를 이용한 온도센서의 민감도 평가를 저주파 누설 전류 측정을 통하여 수행하였다. 측정결과에서 서로 다른 어닐링 온도 ( $600^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$) 에 따른 서로 다른 패턴의 저주파 노이즈 특성을 얻을 수 있었으며, 그 결과에서 온도 센서 동작을 저해할 수 있는 공정 조건($700^{\circ}C$) 을 선별하는 결과를 얻을 수 있었다. 이와 같은 측정법은 향후 BMNO를 이용한 온도센서의 공정 최적화를 측정하는 방법으로 응용 될 수 있다.