• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.295-300
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• 2002

We developed an optical transmitter and receiver for an electrical time division multiplexed (ETDM) 20 Gb/s optical transmission system, and experimentally investigated their characteristics. Especially, the clock extraction circuit, which is a key component in realizing broadband optical transmission receivers, was realized by using an NRZ-to-PRZ converter implemented with a half-period delay line and an EX-OR, a high-Q bandpass filter using a cylindrical dielectric resonator, and a microstrip coupled-line bandpass filter. Finally, the bit-error-rate of demultiplexed 10 Gb/s electrical signal after back to-back transmission was measured, and a high receiver sensitivity [-26.2 dBm for NRZ ($2^{7}-1$) pseudorandom binary sequence (PRBS)] was obtained

• Investigative Magnetic Resonance Imaging
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• v.20 no.3
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• pp.167-174
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• 2016

Purpose: To identify magnetic resonance imaging (MRI) findings of leukemic infiltration of optic nerve and optic neuritis in leukemic patients with emphasis of clinical findings as reference standard to differentiate them. Materials and Methods: MRI and clinical findings of 7 patients diagnosed as leukemic infiltration of optic nerve (n = 5) and optic neuritis (n = 2) in our institution between July 2006 and August 2015were reviewed retrospectively. In particular, MR imaging findings involved perineural enhancement and thickening of optic nerve and its degree, signal intensity, laterality (unilateral/bilateral), intraconal fat infiltration and its degree, and associated central nervous system abnormalities. Results: Of 5 cases of leukemic infiltration of optic nerve, 4 cases showed positive cerebrospinal fluid (CSF) study for leukemia relapse and 1 case was positive on bone marrow (BM) biopsy only. Moreover, of 5 leukemic infiltration of optic nerve, 2 cases showed the most specific MR findings for leukemic central nervous system involvement including 1 prominent leptomeningeal enhancement and 1 chloroma. However, other MR imaging findings of the patients with leukemic infiltration or optic neuritis such as thickening and perineural enhancement of optic nerves are overlapped. Conclusion: Enhancement and thickening of optic nerve were overlapped MR findings in leukemic infiltration of optic nerve and optic neuritis. Our findings suggest that enhancing optic nerve thickening with associated central nervous system MR abnormality favors the diagnosis of leukemic infiltration of optic nerve, especially in patients with history of acute lymphoblastic leukemia. However, CSF and BM study were required for differentiation between leukemic infiltration of optic nerve and optic neuritis.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.220-224
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• 2000

AlGaAs/GaAs HBT를 이용하여 1.9 GHz 대역 2단 MMIC 전력증폭기를 설계하였다. HBT의 실측 S 파라미터를 이용하여 정합회로를 설계하였으며, 목적에 따라 적절한 형태의 출력 정합 회로를 하이브리드 형태로 칩 외부에 부가할 수 있도록 설계하였다. HBT의 실측정 S 파라미터의 fitting을 통하여 비선형 등가모델을 추출하였고, load-pull 시뮬레이션으로 최대 출력 정합 임피던스를 결정하였다. 시뮬레이션 결과, 29 dBm의 출력 전력, 40 %의 전력 부가 효율, 그리고 16 dB의 전력 이득을 얻었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.234-237
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• 2001

본 논문은 마이크로파 수신기시스템에서 발생되는 이미지성분을 효과적으로 제거하기 위해서 Dual Gate FETs을 이용한 이미지 제거 특성을 분석하였다. Dual Gate를 이용한 이미지 제거능력을 모의 실험한 결과 RF신호에 대한 이미지 제거특성은 -32dBc을 보였으며, Dual Gate FETs믹서의 변환이득은 1.7 dBm, 5GHz 발진주파수는 -117.3 dBc/100KHz 임을 확인하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39B no.7
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• pp.440-448
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• 2014

A $4{\times}10$ Gb/s Transimpedance Amplifier (TIA) array is implemented in $0.13{\mu}m$ CMOS process technology, which will be used in the receiver of TWDM-PON system. A technology for bandwidth enhancement of a given $4{\times}10$ Gb/s TIA presented under inductor peaking technology and a single 1.2V power supply based low voltage design technology. It achieves 3 dB bandwidth of 7 GHz in the presence of a 0.5 pF photodiode capacitance. The trans-resistance gain is $50dB{\Omega}$, while 48 mW/ 1channel from a 1.2 V supply. The input sensitivity of the TIA is -27 dBm. The chip size is $1.9mm{\times}2.2mm$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.974-983
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• 2017

In this paper, we have discussed the search function that can be embedded and used on Android-based applications. We used BM25 to suppress insignificant and too frequent words such as postpositions, Pivoted Length Normalization technique used to resolve the search priority problem related to each item's length, and Rocchio's method to pull items inferred to be related to the query closer to the query vector on Vector Space Model to support implicit feedback function. The index operation is divided into two methods; simple index to support offline operation and complex index for online operation. The implementation uses query inference function to guess user's future input by collating given present input with indexed data and with it the function is able to handle and correct user's error. Thus the implementation could be easily adopted into smartphone applications to improve their search functions.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.7
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• pp.1044-1052
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• 1999

A 2-stage 1 watt MMIC(Monolithic Microwave Integrated Circuits) HPA(High Power Amplifiers) at 20 GHz band has been designed and fabricated. The $0.15\mu\textrm{m}$ with the width of $400\mu\textrm{m}$for single device pHEMT technology was used for the fabrication of this MMIC HPA. Due to the series feedback technique from source to ground, bias circuits and stabilization circuits on the main microstrip line, the stability factors(Ks) are more than one at full frequency. The independent operation for each stage and excellent S11, S22 less than -20 dB have been obtained by using lange couplers. For beginning the easy design, linear S-parameters have been extracted from the nonlinear equivalent circuit in foundry library, and equivalent circuits of devices at in/output ports were calculated from this S-parameters. The measured performances, which are in well agreement with the predicted ones, showed the MMIC HPA in this paper has the minimum 15 dB of linear gain, -20 dB of reflection coefficients and 31 dBm of output power over 17~25 GHz.

• The Journal of Korean Institute of Information Technology
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• v.17 no.3
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• pp.43-50
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• 2019

In this paper, we propose a S-band oscillator with a reduced electrical size by applying a vertical split ring resonator(VSRR). The VSRR is a type of split ring resonator that operates as a resonator by the capacitance and inductance generated between the microstrip lines arranged on the top and bottom of the dielectric substrate and it has an advantage that the electrical size of the resonance circuit can be reduced as compared with the conventional ring resonator. In this paper, we design a VSRR operating over S-band and an oscillator using the VSRR as the resonant circuit. The proposed oscillator showed the output of 5.9dBm at 2.4HGz and showed the phase noise characteristics of -112.58dBc at 100KHz offset frequency and -117.85dBc at 1MHz offset.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.6
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• pp.691-699
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• 2012

In this paper, we present a Vt-DRO with a low phase noise, which is achieved by improving the coupling structure between the dielectric resonator and microstrip line. The Vt-DRO is a closed-loop type and is composed of 3 blocks; dielectric resonator, phase shifter, and amplifier. We propose a mathematical estimation method of phase noise, using the group delay of the resonator. By modifying the coupling structure between the dielectric resonator and microstrip line, we achieved a group delay of 53 nsec. For convenience of measurement, wafer probes were inserted at each stage to measure the S-parameters of each block. The measured S-parameter of the Vt-DRO satisfies the open-loop oscillation condition. The Vt-DRO was implemented by connecting the input and output of the designed open-loop to form a closed-loop. As a result, the phase noise of the Vt-DRO was measured as -132.7 dBc/Hz(@ 100 kHz offset frequency), which approximates the predicted result at the center frequency of 5.3 GHz. The tuning-range of the Vt-DRO is about 5 MHz for tuning voltage of 0~10 V and the power is 4.5 dBm. PFTN-FOM is -31 dBm.

• ETRI Journal
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• v.26 no.3
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• pp.229-240
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• 2004

This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.