• Title/Summary/Keyword: BCL2

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Etch properties of ZnO thin films in the $BCl_3$/Ar inductively coupled plasma system ($BCl_3$/Ar 유도 결합 플라즈마 시스템을 이용한 ZnO 박막의 식각 특성)

  • Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Kyoung-Tae;Kim, Jong-Gyu;Kim, Chang-Il
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1319-1320
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    • 2007
  • 본 연구는 ZnO 박막을 유도 결합 플라즈마를 이용하여, $BCl_3$/Ar 가스 혼합비, RF 전력, 직류 바이어스 전압과 공정 압력을 변경하면서 실험하였다. ZnO 박막의 최고 식각속도는 80%의 $BCl_{3}/(BCl_{3}+Ar)$에서 700 W의 RF 전력, -150 V의 직류 바이어스 전압, 15 mTorr의 공정 압력, $28^{\circ}C$의 기판 온도로 고정시켰을 때 50 nm/min 이었다. 이 조건에서 ZnO 박막과 $SiO_2$의 선택비는 0.75 이었다.

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고밀도 유도결합형 $Cl_2/BCL_3/Ar$ 플라즈마를 이용한 sapphire의 식각 특성

  • 성연준;이용혁;김현수;염근영;이재원;채수희;박용조
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.31-31
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    • 2000
  • Al2O3는 높은 화학적, 열적 안정성으로 인하여 미세전자 산업에서 절연막이나 광전자소자의 재료로써 널리 이용되고 있다. 특히, 사파이어는 고위도의 LED, 청색 LD의 재료인 GaN 계열의 III-Nitride 물질을 성장시킬 때 필요한 기판으로 보편적으로 사용되고 있다. 이러한 GaN계열의 광소자 제조에서 사파이어 기판을 적용시 지적되는 문제점들 중의 하나는 소자제조 후 사파이어의 결정 구조 및 높은 경도에 의해 나타나는 cutting 및 backside의 기계적 연마가 어렵다는 것이다. 최근에는 이온빔 식각이나 이온 주입 후 화학적 습식 시각, reactive ion etching을 통한 사파이어의 건식 식각이 소자 분리 및 backside 공정을 우해 연구되고 있다. 그러나 이러한 방법을 이용한 사파이어의 식각속도는 일반적으로 15nm/min 보다 작다. 높은 식각율과 식각후 표면의 작은 거칠기를 수반한 사파이어의 플라즈마 식각은 소자 제조 공정시 소자의 isolation 및 lapping 후 연마 공정에 이용할 수 있다. 본 연구에서는 평판 유도결합형 플라즈마를 이용하여 Cl2/BCL3/Ar 의 가스조합, inductive power, bias voltage, 압력, 기판온도의 다양한 공정 변수를 통하여 (0001) 사파이어의 식각특성을 연구하였다. 사파이어의 식각속도는 inductive power, bias voltage, 그리고 기판 온도가 증가할수록 증가하였으며 Cl2에 BCl3를 50%이하로 첨가할 때 BCl3 첨가량이 증가할수록 식각속도 및 식각마스크(photoresist)와의 식각선택비가 증가하는 것을 관찰하였다. 또한, Cl3:BCl3=1:1의 조건에 따라 Ar 첨가에 따른 식각속도 및 표면 거칠기를 관찰하였다. 본 연구의 최적 식각조건인 40%Cl2/40%BCl3/20%Ar, 600W의 inductive power, -300V의 bias voltage, 30mTorr의 압력, 기판온도 7$0^{\circ}C$에서 270nm/min의 사파이어 식각속도를 얻을수 있었다. 그리고 이러한 식각조건에서 표면의 거치기를 줄일수 있었다. 사파이어 식각은 보편적인 사파이어 lapping 공정시 수반되어 형성된 표면의 거치기를 줄이기 위한 마지막 공정에 응용될수 있다. 사파이어의 식각시 나타나는 식각 부산물은 플라즈마 진단방비인 optical emission spectroscopy (OES)를 통하여 관찰하였고, 식각시 사파이어의 표면성분비 변화 및 표면의 화학적 결합은 X-ray photoelectron spectroscopy(XPS)를 사용하여 측정하였다. 시각 전, 후의 표면의 거칠기를 scanning electron microscopy(SEM)을 통하여 관찰하였다.

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Induction of Apoptosis by Bee Venom in A549 Human Lung Epithelial Cancer Cells through Modulation of Bcl-2 and IAP Family and Activation of Caspases (Bcl-2 및 IAP family의 발현 변화와 caspase 활성을 통한 봉독의 인체폐암세포 apoptosis 유도)

  • Woo, Hyun-Joo;Kim, Hyun-Joong;Hong, Su-Hyun;Hong, Sang-Hoon;Choi, Byung-Tae;Lee, Yong-Tae;Park, Dong-Il;Choi, Yung-Hyun
    • Journal of Life Science
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    • v.17 no.11
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    • pp.1596-1600
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    • 2007
  • Bee venom is used to treat inflammatory diseases in Korean traditional medicine and has been known to inhibit proliferation and induce apoptosis in cancer cells. However, the molecular mechanisms involved in bee venom-induced apoptosis are still uncharacterized in human lung cancer cells. In the present study, we investigated the effects of bee venom on the apoptosis of A549 human lung epithelial cancer cells. Treatment of bee venom inhibited the cell viability and induced apoptosis in a concentration-dependent manner as measured by hemocytometer counts, fluorescence microscopy and flow cytometry analysis. Bee venom-induced apoptosis in A549 cells was associated with a marked inhibition of anti-apoptotic Bcl-2 expression without significant changes in the levels of Bax and Bcl-xL. Bee venom treatment also inhibited the levels of IAP family members such as cIAP-1 and cIAP-2 and induced the proteolytic activation of caspase-3 and caspase-9. Although further studies are needed, the present results suggest that apoptotic signals evoked by bee vemon in A549 cancer cells may converge caspases activation through a down-regulation of Bcl-2 rather than an up-regulation of Bax. These findings provide important insights into the possible molecular mechanisms of the anti-cancer activity of bee vemon in human cancer cells.

Inhibition of Apoptosis by Nitric Oxide in MCF-7 Cells (유방암 세포(MCF-7)에서 nitric oxide에 의한 apoptosis 억제)

  • Kim, Kyun-Ha;Roh, Sang-Geun;Park, Hae-Ryun;Choi, Won-Chul
    • Journal of Life Science
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    • v.19 no.2
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    • pp.157-162
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    • 2009
  • Nitric oxide (NO) is a diffusible, multifunctional and transcellular messenger that has been implicated in numerous physiological and pathological conditions. It has been reported that NO induced apoptosis in tumor cells, macrophage cells and inhibited apoptosis in normal cells, endothelial cells. To examine whether NO could induce apoptosis in MCF-7 cells, cells were treated with SIN-1 (3-morpholinosydnonimine), NO donor. Cell viability did not change in SIN-1 treated cells for 48 h and there was no significantly changes in cell cycle progression or growth pattern by FACS analysis. But p53 protein, an apoptosis-related factor, increased SIN-1 treatment time dependently. Bcl-2, MDM2 and p21 were also accumulated. Bax level did not change. A major role of inhibiting apoptosis by NO in MCF-7 cells, cobalt chloride ($CoCl_2$) was added to cells preincubated with SIN-1. Whereas $CoCl_2$ treated cells underwent apoptosis, for 24 h SIN-1 preincubated cells were not induced apoptosis. Inactivated proteins, MDM2 and bcl-2, by $CoCl_2$ levels also increased in SIN-1 pre-treated cells. These results suggested that SIN-1 blocked p53 by MDM2 activation and inhibited apoptosis by inducing p21 and bcl-2 expression.

High Density Inductively Coupled Plasma Etching of InP in BCl3-Based Chemistries (BCl3 기반의 혼합가스들을 이용한 InP 고밀도 유도결합 플라즈마 식각)

  • Cho, Guan-Sik;Lim, Wan-tae;Baek, In-Kyoo;Lee, Je-won;Jeon, Min-hyun
    • Korean Journal of Materials Research
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    • v.13 no.12
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    • pp.775-778
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    • 2003
  • We studied InP etching in high density planar inductively coupled $BCl_3$and $BCl_3$/Ar plasmas(PICP). The investigated process parameters were PICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of PICP source power and RIE chuck power increased etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness <2 nm) with a moderate etch rate (300-500 $\AA$/min) after the planar $BCl_3$/Ar ICP etching. It may make it possible to open a new regime of InP etching with $CH_4$$H_2$-free plasma chemistry. Some amount of Ar addition (<50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.

Korean Red Ginseng protects endothelial cells from serum-deprived apoptosis by regulating Bcl-2 family protein dynamics and caspase S-nitrosylation

  • Kim, Young-Mi;Kim, Jung Hwan;Kwon, Hyuk Min;Lee, Dong Heon;Won, Moo-Ho;Kwon, Young-Guen;Kim, Young-Myeong
    • Journal of Ginseng Research
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    • v.37 no.4
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    • pp.413-424
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    • 2013
  • Korean Red Ginseng extract (KRGE) is a traditional herbal medicine utilized to prevent endothelium dysfunction in the cardiovascular system; however, its underlying mechanism has not been clearly elucidated. We here examined the pharmacological effect and molecular mechanism of KRGE on apoptosis of human umbilical vein endothelial cells (HUVECs) in a serum-deprived apoptosis model. KRGE protected HUVECs from serum-deprived apoptosis by inhibiting mitochondrial cytochrome c release and caspase-9/-3 activation. This protective effect was significantly higher than that of American ginseng extract. KRGE treatment increased antiapoptotic Bcl-2 and Bcl-$X_L$ protein expression and Akt-dependent Bad phosphorylation. Moreover, KRGE prevented serum deprivation-induced subcellular redistribution of these proteins between the mitochondrion and the cytosol, resulting in suppression of mitochondrial cytochrome c release. In addition, KRGE increased nitric oxide (NO) production via Akt-dependent activation of endothelial NO synthase (eNOS), as well as inhibited caspase-9/-3 activities. These increases were reversed by co-treatment of cells with inhibitors of eNOS and phosphoinositide 3-kinase (PI3K) and pre-incubation of cell lysates in dithiothreitol, indicating KRGE induces NO-mediated caspase modification. Indeed, KRGE inhibited caspase-3 activity via S-nitrosylation. These findings suggest that KRGE prevents serum deprivation-induced HUVEC apoptosis via increased Bcl-2 and Bcl-$X_L$ protein expression, PI3K/Akt-dependent Bad phosphorylation, and eNOS/NO-mediated S-nitrosylation of caspases. The cytoprotective property of KRGE may be valuable for developing new pharmaceutical means that limit endothelial cell death induced during the pathogenesis of vascular diseases.

Antiproliferative Effect of Mistletoe Extract Added Kimchi in Human Lung Carcinoma A549 Cells (겨우살이 물추출물 첨가 김치의 A549 인체 폐암 세포 증식저해 효과)

  • Kil, Jung-Ha
    • Journal of Life Science
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    • v.27 no.12
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    • pp.1507-1514
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    • 2017
  • The purpose of this study aimed at examining the antiproliferative effect of kimchi (kimchi B) adding mistletoe extract known as an anticancer function to improve the functions of kimchi. The study investigated the antiproliferative effect through hemocytometer counts and MTT assay, apoptosis induction through DAPI staining, and mRNA expression through RT-PCR using human lung carcinoma A549 cells. The standardized kimchi (Kimchi A) was used as a control group. As a result of hemocytometer counts and the MTT assay, it was found that kimchi samples inhibited the growth of A549 cells in a concentration-dependent manner. Kimchi B induced apoptosis in A549 cells through DAPI staining. The apoptosis induced by kimchi B was associated with the increase in the expression of pro-apoptotic Bax and with the decrease in the expression of anti-apoptotic Bcl-2 and Bcl-xL. Also, kimchi B influenced the increase in the expression of p21 mRNA, but did not have the effect on the expression of p53 mRNA. In conclusion, the antiproliferative effect of kimchi B was due to apoptosis induced by increasing Bax and decreasing Bcl-2, and increasing p21. The findings will be utilized to develop kimchi with the improved function for the patients having cancer.

The Etching Characteristics of ZnO thin Films using $BCl_3/Ar$ Inductively Coupled Plasma ($BCl_3/Ar$ 유도 결합 플라즈마를 이용한 ZnO 박막의 식각 특성)

  • Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Kyoung-Tae;Kim, Jong-Gyu;Kang, Chan-Min;Kim, Chang-Il
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.3
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    • pp.566-570
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    • 2007
  • The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with $BCl_3/Ar$ gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to $SiO_2$ as a function of $BCl_3/Ar$ gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).

Temperature effect on Dry Etching of ZrO2 in Cl2/BCl3/Ar Plasma (기판 온도에 따른 Cl2/BCl3/Ar 플라즈마에서 ZrO2 박막의 건식 식각)

  • Yang, Xue;Ha, Tae-Kyung;Wi, Jae-Hyung;Um, Doo-Seung;Kim, Chang-Il
    • Journal of the Korean institute of surface engineering
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    • v.42 no.6
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    • pp.256-259
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    • 2009
  • The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of $ZrO_2$ thin film and selectivity of $ZrO_2$ thin film over $SiO_2$ thin film in inductively coupled plasma as functions of $Cl_2$ addition in $BCl_3$/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of $10^{\circ}C$ to $80^{\circ}C$. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).