• Title/Summary/Keyword: BCL-2

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Study of the Etched ZnO Thin Film Surface in the $BCl_{3}/Ar/Cl_{2}$ Plasma ($Cl_{2}/BCl_{3}$/Ar 플라즈마에 의해 식각된 ZnO 박막 표면의 연구)

  • U, Jong-Chang;Ha, Tae-Gyeong;Wi, Jae-Hyeong;Ju, Yeong-Hui;Eom, Du-Seung;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.264-265
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    • 2009
  • 본 연구에서 유도결합 플라즈마 식각 장치외 $BCl_3/Ar/Cl_2$ 가스 혼합비를 이용하여 ZnO 박막을 식각 하였을 때, 식각 된 ZnO 박막의 표면 반응에 관하여 관찰하였다. ZnO 박막의 식각 실험 조건은 RF 전력 700 W, 직류바이어스 전압 - 150 V, 공정 압력 15 mTorr로 고정하였고, $Cl_2/(Cl_2+BCl_3+Ar)$ 가스 혼합비를 변경하면서 식각 실험을 수행하였다. $Cl_2$ 가스가 3 sccm 일 때, ZnO 박막의 식각속도는 53 nm/min으로 가장 높았으며, 이때 ZnO 박막에 대한 $SiO_2$의 선택비는 0.89 이었다. 식각된 ZnO 박막의 표면은 XRD (X-ray diffraction)와 AFM(atomic force microscopy)를 이용하여 결정상의 변화와 표면의 거칠기를 분석하였다. AFM 분석 결과에서 Ar, $BCl_3$$Cl_2$ 플라즈마를 이용하여 식각된 시료의 표면 거칠기 근 값이 식각전의 시료나 $BCl_3/Ar/Cl_2$ 플라즈마로 식각된 시료보다 큰 것을 확인하였다. 이는 식각된 시료에서의 Zn 양의 감소나 비휘발성 식각 잔류물에 의한 영향으로 판단된다. SIMS(secondary ion mass spectrometery) 분석을 통해 검증 하였다.

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Low Expression of the bcl2 Gene in Gastric Adenocarcinomas in Mazandaran Province of Iran

  • Mirmajidi, Seyedeh Habibeh;Ataee, Ramin;Barzegar, Ali;Nikbakhsh, Novin;Shaterpour, Mohammad
    • Asian Pacific Journal of Cancer Prevention
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    • v.16 no.14
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    • pp.6067-6071
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    • 2015
  • Background: Gastric cancer accounts for about 8% of the total cancer cases and 10% of total cancer deaths worldwide. It is the second lethal cancer after esophageal cancer and is considered the fourth most common cancer in north and northwest Iran. The bcl2 family has a key role in the regulation of apoptosis and change in its expression can contribute to cancer. This study initially scheduled to determine the expression of bcl2 gene in tissue samples of adenocarcinoma cancer patients. Materials and Methods: A total of 10 samples of gastric adenocarcinoma and 10 of normal tissues from Sari hospital were selected and after DNA extraction from tissues, bcl2 gene expression assayed by real-time PCR. Results: Our results demonstrated higher expression of the bcl2 gene in control compared with cancer and marginal cancer tissues. Conclusions: On one hand BCL2 plays an important role as an oncogene to inhibit apoptosis; on the other hand, it can initiate cell cycle arrest at G0 stage. Our observed association between its expression and patient survival is quite conflicting and may be tissue-specific. The data suggest expression both tumoural and non-tumoral(marginal) groups have lowered expression than controls (P>0.05). Due to the low number of samples we could not examine the relationship with clinicopathological features. However, bcl-2 expression may be important for prognostic outcome or a useful target for therapeutic intervention.

The Immunohistochemical Analysis for the Expression of Survivin, HSP, and Bcl-2 in Non-small Cell Lung Carcinoma (비소세포폐암에서 Survivin, HSP 및 Bcl-2 발현에 관한 면역조직화학적 분석)

  • Hong, Hyun-Ju;Hong, Seok-Gyun;Lee, Kye-Young;Kim, Woo-Ho;Lee, Choon-Taek;Yoo, Chul-Gyu;Han, Sung-Koo;Shim, Young-Soo;Kim, Young-Whan
    • Tuberculosis and Respiratory Diseases
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    • v.52 no.5
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    • pp.441-452
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    • 2002
  • Background : Anti-apoptotic proteins may be involved in tumor development, progression and the response to treatment, Bcl-2 is by far the most studied anti-apoptotic protein. A novel inhibitor of apoptosis, designated survivin, and the heat shock proteins (HSPs) have recently been found in many human cancers. Immunohistochemical methods were used to determine the expression level of survivin, HSP70 and bcl-2 in non-small cell lung cancer (NSCLC) to evaluate their clinical significance. Materials and Methods : Tissue array slides were obtained from 99 surgically resected NSCLCs. Immunohistochemical staining was performed by an immuno-peroxidase technique using an avidin-biotinylated horseradish peroxidase complex. Anti-survivin rabbit polyclonal antibodies, anti-HSP70 mouse monoclonal antibodies and anti-bcl-2 mouse monoclonal antibodies were used as the primary antibodies. Results : Positive staining of survivin was detected in 33.3% of the cases. Survivin positivity is associated with to females and recurrence. A nonstatistically significant trend toward increased survivin expression was observed in non-smokers, and its expression inversely correlated with the number of cigarettes smoked in smokers. HSP70 was detected in 84.8% but this did not correlated with the clinicopathologic characteristics. Bcl-2 was detected in 18.2% and its expression correlated to tumor recurrence. No significant difference in the median survival time was noted in a comparison of all cases with survivin expression and those without. There was no association between HSP70 or bcl-2 expression and survival. Conclusion : Survivin expression was significantly associated with females and tumor recurrence. In addition its expression was inversely associated with the number of cigarettes smoked. However, HSP70 and bcl-2 expression were not associated with the clinical parameters or survival. This suggests that measuring the survivin levels may be useful in identifying patients at high risk for disease recurrence. Therefore, survivin might be a new diagnostic/therapeutic target in cancer.

High Density Planar Inductively Coupled Plasma Etching of GaAs in BCl$_3$-based Chemistries (BCl$_3$ 기반 가스를 이용한 GaAs의 고밀도 평판형 유도결합 플라즈마 식각)

  • ;;;;;;S.J. Pearton
    • Journal of the Korean institute of surface engineering
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    • v.36 no.5
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    • pp.418-422
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    • 2003
  • 평판형 유도결합 플라즈마 식각장비(inductively coupled plasma etcher)를 이용하여 각종 공정조건들에 따른 GaAs의 식각특성을 연구하였다. 공정변수들은 ICP 소스파워(0-500 W), RIE 척파워(0-150 W), 가스 종류($BCl_3$, $BCl_3$/Ar, $BCl_3$/Ne) 및 가스혼합비였다. $BCl_3$ 가스만을 이용하여 GaAs를 식각한 경우보다 25%의 Ar이나 Ne같은 불활성 기체를 혼합한 $15BCl_3$/5Ar, $15BCl_3$/5Ne 가스를 이용한 경우의 식각률이 더 우수한 것을 확인하였다. 그리고 50% 이하의 Ar이 혼합된 $BCl_3$/Ar의 경우는 높은 식각률 (>4,000 $\AA$/min)과 평탄한 표면(RMS roughness : <2 nm)을 얻을 수 있었지만 지나친 양(>50%)의 Ar의 혼합은 오히려 표면을 거칠게 하거나 식각률을 떨어뜨리는 결과를 가져왔다. 그리고 20 sccm $BCl_3$, 100 W RIE 척파워, 300 W ICP 소스파워, 공정압력이 7.5 mTorr인 조건에서의 GaAs의 식각결과는 아주 우수한 특성(식각률: ∼ 4,000, $\AA$/min, 우수한 수직측벽도: >$87^{\circ}$, 평탄한 표면: RMS roughness : ∼0.6 nm)을 나타내었다.

Expression of Bcl-2 Family in 4-Nitroquinoline 1-Oxide-Induced Tongue Carcinogenesis of the Rat (백서 혀에서의 4-nitroquinoline 1-oxide 유도 발암과정에서 Bcl-2 계 유전자의 발현)

  • Choi, Jae-Wook;Chung, Sung-Su;Lee, Geum-Sug;Kim, Byung-Gook;Kim, Jae-Hyeong;Kook, Eun-Byul;Jang, Mi-Sun;Ko, Mi-Kyeong;Jung, Kwon;Choi, Hong-Ran;Kim, Ok-Joon
    • Journal of Oral Medicine and Pain
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    • v.30 no.3
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    • pp.301-317
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    • 2005
  • The number of patients with tongue carcinoma is increasing rapidly among young individuals in many parts of the world. Oral carcinoma progresses from hyperplastic lesion through dysplasia to invasive carcinoma and the concept of "field cancerization" with molecular alteration has been suggested for oral cavity carcinogenesis. Significant improvement in treatment and prognosis will depend on more detailed understanding of the multi-step process leading to cancer development. To induce tongue carcinoma in rat by 4-NQO, each drinking water was made to 10 ppm, 25 ppm, 50 ppm and control (only D.W. without 4-NQO). Specimens were classified into 4 groups such as control, I (mild & moderate dysplasia), II (severe dysplasia and carcinoma in situ), III (carcinoma). The mRNA expressions of Bcl-2 family were evaluated by RT-PCR technique. For anti-apoptotic Bcl-2 family, mRNA expression of Bcl-w was down-regulated in all stages of tongue carcinogenesis model. However, mRNA expression of Bcl-2 was up-regulated. For pro-apoptotic Bcl-2 family, all members were down-regulated in all stages of tongue carcinogenesis model except for Bad mRNA in group III. In terms of BH3 only protein, mRNA expressions of Bok and Mcl-1 were down regulated in all stages of specimen, but Bmf in group II and BBC3 in group III were up-regulated. Our current findings demonstrated the involvements of mRNA expression of Bcl-2 family in multi-step tongue carcinogensis. This highlights the necessity for continued efforts to discover suitable biomakers (Bcl-2 family) for early diagnosis of the disease, and to understand its pathogenesis as a first step in improving methods of treatment. The discovery of these potential biomarkers and molecular targets for cancer diagnostics and therapeutics has the potential to significantly change the clinical approach and outcome of the disease.

PACKING LATIN SQUARES BY BCL ALGEBRAS

  • LIU, YONGHONG
    • Journal of applied mathematics & informatics
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    • v.40 no.1_2
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    • pp.133-139
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    • 2022
  • We offered a new method for constructing Latin squares. We introduce the concept of a standard form via example for Latin squares of order n and we also call it symmetric BCL algebras matrix, and thereby become BCL algebra representations of the picture of Latin squares. Our research shows that some new properties of the Latin squares with BCL algebras are in ℤn.

A Study of the Dry Etching Properties of TiN Thin Film in He/BCl3/Cl2 Inductively Coupled Plasma (He/BCl3/Cl2유도결합 플라즈마를 이용한 TiN 박막의 식각 특성)

  • Woo, Jong-Chang;Joo, Young-Hee;Park, Jung-Soo;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.9
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    • pp.718-722
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    • 2011
  • In this work, we investigated to the etching characteristics of the TiN thin film in He/$BCl_3/Cl_2$ plasma. The etch rate was measured by the gas mixing ratio, the RF power, the DC bias voltage and the process pressure. The maximum etch rate in He/$BCl_3/Cl_2$ plasma was 59 nm/min. The etch rate increased as the RF power and the DC-bias voltage was increased. The chemical reaction on the surface of the etched the TiN thin films was investigated with X-ray photoelectron spectroscopy (XPS). The intensity of Ti 2p and N 1s peaks are varied during etching process. A new peak was appeared in He/$BCl_3/Cl_2$ plasma. The new peak was revealed Ti-$Cl_x$ by Cl 2p peak of XPS wild scan spectra analysis.

Etching characteristics of $Y_2O_3$ Thin films using inductively coupled Plasma of $BCl_3$/Ar Gas Mixtures (BCl3/Ar 혼합가스를 이용한 $Y_2O_3$ 박막의 유도결합 플라즈마 식각)

  • Kim, Moon-Keun;Yang, Dae-Wang;Kim, Young-Ho;Kwon, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.67-67
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    • 2009
  • 본 연구는 강유전체 박막의 buffer 층으로 사용되는 Yttrium oxide($Y_2O_3$) 박막에 대한 $BCl_3$/Ar 혼합가스 식각 특성에 대해 연구하였다. 식각 메카니즘을 해석하기 위해 QMS(Quadrupole Mass Spectrometer), OES(Optical Emission Spectroscopy)를 사용하여 플라즈마 특성을 추출하였다. 공정 조건(source power, bias power, pressure, total gas flow)을 동일하게 유지하고 $BCl_3$/Ar 혼합가스 비율을 변화시키며 실험을 진행 하였다. 혼합가스의 비율이 $BCl_3$(80%)/Ar(20%)일때 가장 높은 식각 속도을 나타냈고, 이후 점차 감소하였다. 이때의 식각 속도는 8.8 nm/min 였다. 이에 $Y_2O_3$는 이온 보조 화학식각 특성을 가짐을 확인하였다.

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Dry Etching Characteristics of TiN Thin Films in BCl3/He Inductively Coupled Plasma (BCl3/He 유도결합 플라즈마를 이용한 TiN 박막의 식각 특성)

  • Joo, Young-Hee;Woo, Jong-Chang;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.9
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    • pp.681-685
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    • 2012
  • We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

The etching characteristics of PZT thin films in Ar/$Cl_2/BCl_3$ plasma using ICP (ICP를 이용한 Ar/$Cl_2/BCl_3$ 플라즈마에서 PZT 식각 특성)

  • An, Tae-Hyun;Kim, Kyoung-Tae;Lee, Young-Hie;Seo, Yong-Jin;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.848-850
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    • 1999
  • In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

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