• Title/Summary/Keyword: BARRIER METAL

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A Study on Zirconia/Metal.Functionally Gradient Materials by Sintering Method(1) (소결법에 의한 $ZrO_2/Metal$계 경사기능재료에 관한 연구(1))

  • 정연길;최성철
    • Journal of the Korean Ceramic Society
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    • v.31 no.3
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    • pp.321-329
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    • 1994
  • Functionally gradient materials(FGM), which have the continuous or stepwise variation in a composition and microstructure, are being noticed as the material that solves problems caused by heterogeneous interface of coating or joining. And these materials also expect new functions occured by gradient composition itself. Therefore, to examine possibility of thermal barrier materials, TZP/Mo·FGM and TZP/Ni·FGM were fabricated by sintering method. As to the sintered specimens, sintering shrinkage, relative density and Vicker's hardness in each composition were examined. The phenomena due to the difference of sintering shrinkage velocity during sintering process and the thermal stress induced through differences of thermal expansion coefficient in FGM were discussed. And the structure changes at interface and microsturcture of FGM were investigated. As a results, the difference of shrinkage between ceramic and metal was about 14% in TZP/Mo and 7% in TZP/Ni. The relative density and hardness were considerably influenced by metal content changes. Owing to unbalance of sintering shrinkage velocity between ceramic and metal, various sintering defects were occured. To control these sintering defects and thermal stress, gradient composition of FGM should be narrow. The microstructure changes of FGM depended on the ceramic or metal volume percents and were analogous to the theoretical design.

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Errects of $SiH_4/WF_6$Ratio on the Electrical Properties of LPCVD W Films for Contact Metal (Contact Barrier metal용 LPCVD W막의 전기적 특성에 대한 $SiH_4/WF_6$비의 효과)

  • Lee, Jong-Mu;Park, Won-Gu;Im, Yeong-Jin;Son, Jae-Hyeon;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.3 no.6
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    • pp.661-667
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    • 1993
  • Effects of $SiH_4//WF_6$(=R) ratio on the electrical properties of W films such as resistvity, contact resistance, junction leakage current in the selective W CVD technology for contact barrier metal were investigated with the emphasis on the role of $\alpha$-W Resistivity of W increases with increasing R, which is primarily due to the phase transformation from $\alpha$-W to , $\alpha$-W. $\alpha$-W found in the SiH4 reduced CVD W film is stabilized by Si incorporated into the W film rather than by oxygen. $\alpha$-W is found in the W film deposited on the Si substrate for high R, while $\alpha$-W is not found in the W film deposited on the TiN substrate even for high R. Also junction leakages increase with increasing R, which is caused not only by the vertical Si consumption but also the lateral Si consumption.

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What Is the Key Vacuum Technology for OLED Manufacturing Process?

  • Baek, Chung-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.95-95
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    • 2014
  • An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

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A Study of Sedimentary Environment in the Estuary of Nakdong River : sedimentation Processes and Heavy Metal Distributions (낙동강(洛東江) 하구역(河口域) 퇴적환경연구(堆積環境硏究) : 퇴적작용(堆積作用) 및 중금속(重金屬) 분포(分布))

  • LEE, YOU DAE;KIM, CHANG-WON
    • 한국해양학회지
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    • v.25 no.4
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    • pp.182-188
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    • 1990
  • The sedimentation processes and heavy metal distributions at the Nakdong estuary were investigated during October 1987 and September 1988. The depositional sedimentary environment of the studied area was estuarine environments and was divided into three provinces depending on its textural parameters such as barrier, tidal falt, and water passes. The relationship between the textural parameters showed that the barrier was under strong wave action, that the tidal flat was under relatively weak wind-driven currents, and that the water passes were under strong and continuous tidal currents. Each environments was resulted from different transport mechanism. the sand barrier sediments were transported by all three populations including suspension, saltation, and bed load, and water pass-deposited sediments were by the bad load with some suspension population. In water mass over the studied area, the concentrations of heavy metals including Cu, Cd, $Cr^{+6}$, Pb and Zn were recorded to be 27.8, 6.7, 20.4, 16.3, and 37.3 ppb in their highest concentrations, respectively. and those in sediments were 20.0, 1.65, 25.4, 15.4, and 132.0 ppm, respectively. The total up take factored of Cu, Cd, $Cr^{+6}$, Pb, and Zn by V. Muller (corbicula fluminea) were 1600, 310, 310, 490 and 7900, respectively.

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A Study in the High Temperature Wear and Thermal Shock Resistance of the Functional Gradient Thermal Barrier Coating by Air Plasma Spray with ZrO$_2$ (APS법에 의한 경사기능성 지르코니아 열장벽 피막의 열충격 및 고온내마모 특성에 관한 연구)

  • 한추철;박만호;송요승;변응선;노병호;이구현;권식철
    • Journal of Surface Science and Engineering
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    • v.30 no.4
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    • pp.272-280
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    • 1997
  • The Thermal Barrier Coation(TBC) to improve the that barrier and wear resistant propenrty in high temperature ofthe aircraftength between the accumlation of the aircraft engine and the automobile engine has usually the two layer structure. One is a creamic top layer for heat insulation and the other is a metal bond layer to facilitate the bond strength between the top ceramic layer and the substrate. But, the coated layers should be peeled off because of the accumulation of the thermal stress by the differance of the thermal expantion coefficient between metal and ceramics in a hrat cyclic environment. In this study, the intermediate layer by plasm spray process was introduced to reduce the thermal stress. The powders of plasm spray coating were the Yttria Stabilized Zirconia (YSZ), the Magnesia Stabillized Zirconia(MSZ) and NiCrAlY. the intermediate layer was sprayed with the powders of the bond cast for the purpose of test were executed. The high temperature wear resistance tends to decreasnceee wear and thermal shock test were exeucuted. The high temperature were resistance of the YSZ TBC is better that of the MSZ TBC. The wearrsistance tends to decrease accoring to incresing the temperature between $400^{\circ}C$to $600^{\circ}C$. The thermal shock life of the 3 layer TBC with YSZ top casting was the most outstanding thermal shock rsisstasnce. This means that the intermediate layer should play an importnat roll to alleviate the diffrerence of the thermal expansion coef frcients between metallic layer and cermics layer.

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Interfacial disruption effect on multilayer-films/GaN : Comparative study of Pd/Ni and Ni/Pd films

  • 김종호;강희재;김차연;전용석;서재명
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.113-113
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    • 2000
  • 직접천이형 wide band gap(3.4eV) 반도체중의 하나인 GaN를 청색 및 자외선 laser diode, 고출력 전자장비 등으로 응용하기 위해서는 낮은 접합저항을 갖는 Ohmic contact이 선행되어야 한다. 그러나 만족할만한 p-type GaN의 Ohmic contact은 아직 실현되고 있지 못하며, 이는 GaN와 접합 금속과의 구체적인 반응의 연구를 필요로 한다. 본 연구에서 앞서 Pt, Pt, Ni등의 late transition metal을 p-GaN에 접합시킨 결과 이들은 접합 당시 비교적 평탄하나 후열 처리과정에서 비교적 낮은 온도에서 기판과 열팽창계수의 차이로 인하여 평탄성을 잃어버리면서 barrier height가 증가한다는 사실을 확인하였다. 따라서 본 연구에서는 이러한 열적 불안정성을 극복하기 위하여 Ni과 Pd를 차례로 증착하고 가열하면서 interfacial reaction, film morphology, Fermi level의 움직임을 monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy) 그리고 ex-situ AFM을 이용하여 밝히고자 하였다. 특히 후열처리에 의한 계면 반응에 수반되는 구성 금속원소 간의 합금현상과 금속 층의 평탄성이 밀접한 관계가 있다는 것을 확인하였다. 이러한 합금과정에서 나타나는 금속원소들의 중심 준위의 이동을 체계적으로 규명하기 위해서 Pd1-xNix와 Pd1-xGax 합금들의 표준시료를 arc melting method로 만들어 농도에 따른 금속원소들의 중심 준위의 이동을 측정하여, Pd/Ni/p-GaN 및 Ni/Pd/p-GaN 계에서 열처리 온도에 따른 interfacial reaction을 확인하였다. 그 결과 두 계가 상온에서 nitride 및 alloy를 형성하지 않고 고르게 증착되고, 열처리 온도를 40$0^{\circ}C$에서 $650^{\circ}C$까지 증가시킴에 따라 계면반응의 부산물인 metallic Ga은 증가하고 있으마 nitride는 여전히 형성되지 않는 것을 확인하였다. 증착당시 Ni이 계면에 있는 Pd/Ni/p-GaN의 경우에는 52$0^{\circ}C$까지의 열처리에 의하여 Ni과 Pd가 골고루 섞이고 그 평탄성도 유지되고 barier height의 변화도 없었다. 더 높은 $650^{\circ}C$ 가열에 의해서는 surface free energy가 작은 Ga의 활발한 편석 현상으로 인해 표면은 Ga이 풍부한 Pd-Ga의 합금층으로 덮이고, 동시에 작은 pinhole들이 발생하며 barrier height도 0.3eV 가량 증가하게 된다. 반면에 증착당시 Pd이 계면에 있는 Ni/Pd/p-GaN의 경우에는 40$0^{\circ}C$의 가열까지는 두 금속이 그들 계면에서부터 섞이나, 52$0^{\circ}C$의 가열에 의해 이미 barrier height가 0.2eV 가량 증가하기 시작하였다. 더 높은 $650^{\circ}C$가열에 의해서는 커다란 pinhole, 0.5eV 가량의 barrier height 증가, Pd clustering이 동시에 관찰되었다. 따라서 Ni과 Pd의 일함수는 물론 thermal expansion coefficient가 거의 같으며 surface free energy도 거의 일치한다는 점을 감안하면, 이렇게 뚜렷한 열적 안정성의 차이는 GaN와 contact metal과의 반응시작 온도(disruption onset temperature)의 차이에 기인함을 알 수 있었다. 즉 계면에서의 반응에 의해 편석되는 Ga에 의해 박막의 strain이 이완되면, pinhole 등의 박막결함이 줄어 들고, 이는 계면의 N의 out-diffusion을 방지하여 p-type GaN의 barrier height 증가를 막게 된다.

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Simple Preparation of One-dimensional Metal Selenide Nanomaterials Using Anodic Aluminum Oxide Template

  • Piao, Yuanzhe
    • Journal of Electrochemical Science and Technology
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    • v.3 no.1
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    • pp.35-43
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    • 2012
  • Highly ordered and perforated anodic aluminum oxide membranes were prepared by anodic oxidation and subsequent removal of the barrier layer. By using these homemade anodic aluminum oxide membranes as templates, metal selenide nanowires and nanotubes were synthesized. The structure and composition of these one-dimensional nanomaterials were studied by field emission scanning electron microscopy as well as transmission electron microscopy and energy dispersive X-ray spectroscopy. The growth process of metal selenide inside anodic aluminum oxide channel was traced by investigating the series of samples using scanning electron microscopy after reacting for different times. Straight and dense copper selenide and silver selenide nanowires with a uniform diameter were successfully prepared. In case of nickel selenide, nanotubes were preferentially formed. Phase and crystallinity of the nanostructured materials were also investigated.

The effect of interfacial layer thickness on the interface dipole energy in $O_2$ plasma treated metal/organic interface

  • Kim, Soo-Young;Lee, Jong-Lam
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.115-117
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    • 2009
  • Interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl are determined. After $O_2$ plasma treatment on thick-metal (>4 nm) coated ITO, the work function and interface dipole energy increased. In thin-metal (< 2 nm) coated ITO, no change in the interface dipole energy was found though the work function increased. Thus, the $O_2$ plasma treated thin (< 2 nm) interfacial layer reduced the hole injection barrier.

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Self-healing Coatings for an Anti-corrosion Barrier in Damaged Parts

  • Cho, Soo Hyoun
    • Corrosion Science and Technology
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    • v.8 no.6
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    • pp.223-226
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    • 2009
  • Polymer coatings are commonly applied to metal substrates to prevent corrosion in aggressive environments such as high humidity and under salt water. Once the polymer coating has been breached, for example due to cracking or scratches, it loses its effectiveness, and corrosion can rapidly propagate across the substrate. The self-healing system we will describe prevents corrosion by healing the damage through a healing reaction triggered by the actual damage event. This self-healing coating solution can be easily applied to most substrate materials, and our dual-capsule healing system provides a general approach to be compatible with most common polymer matrices. Specifically, we expect an excellent anti-corrosion property of the self-healing coatings in damaged parts coated on galvanized metal substrates.

The Effects of the Heavy Metal Ions on the Hydration and Microstructure of the Cement Paste (중금속이온이 시멘트의 수화 및 미세구조에 미치는 영향)

  • 김창은;이승규
    • Journal of the Korean Ceramic Society
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    • v.30 no.11
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    • pp.967-973
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    • 1993
  • The effect on the hydration of cement was that Cu and Pb reacted with alkali to form soluble hydrates at theinitial stage and then there followed a slow reaction forming insoluble metal hydroxides. These hydroxides were deposited on the surface of cement particles providing a barrier against further hydration. But as a slow reaction continued, the insoluble layers were eventually destroyed and the hydration reaction resumed. Thereafter, another retardation occured by restricting the polymerization of silicates, shown by FT-IR spectroscopy analysis. In the case of Cr, as its reaction with cement caused H2O, the coordinator of Cr complex, to replace or polymerize with OH-, the formation of Cr complex promoted the leakage of OH- and increased the heat of dissolution. So the total heat evolution during hydration was larger than that in the case of Pb or Cu. The retarding effect of heavy metal ions was in the order Pb>Cu>Cr.

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