• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2006.06b
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• pp.91-96
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• 2006

In this paper, the high efficiency Doherty power amplifier has been designed and realized for microwave applications. The Doherty amplifier has been implemented using silicon MRF 281 LOMOS FET. The RF performances of the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias..tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone. The realized Doherty power amplifier PldB output power has 33dBm at 2.3GHz frequency. Also the Doherty power amplifier shows 11dB gain and -17.8dB input return loss at 2.3GHz to 2.4GHz. The designed Doherty amplifier has been improved the average PAE by 10% higher efficiency than a class AB amplifier alone. The Maximum PAE of designed Doherty power amplifier has been 39%.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.69-76
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• 2008

This work proposes a 12b 1kS/s 65uA 0.35um CMOS algorithmic ADC for sensor interface applications such as accelerometers and gyro sensors requiring high resolution, ultra-low power, and small size simultaneously. The proposed ADC is based on an algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. Two versions of ADCs are fabricated with a conventional open-loop sampling scheme and a closed-loop sampling scheme to investigate the effects of offset and 1/f noise during dynamic operation. Switched bias power-reduction techniques and bias circuit sharing reduce the power consumption of amplifiers in the SHA and MDAC. The current and voltage references are implemented on chip with optional of-chip voltage references for low-power SoC applications. The prototype ADC in a 0.35um 2P4M CMOS technology demonstrates a measured DNL and INL within 0.78LSB and 2.24LSB, and shows a maximum SNDR and SFDR of 60dB and 70dB in versionl, and 63dB and 75dB in version2 at 1kS/s. The versionl and version2 ADCs with an active die area of $0.78mm^2$ and $0.81mm^2$ consume 0.163mW and 0.176mW at 1kS/s and 2.5V, respectively.

• Korean Journal of Remote Sensing
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• v.31 no.5
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• pp.371-384
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• 2015

Although GOCI has potential for land surface monitoring, there have been only a few cases for land applications. It might be due to the lack of reliable land products derived from GOCI data for end-users. To use for land applications, it is often essential to provide cloud-free composite over land surfaces. In this study, we proposed a cloud detection method that was very important to make cloud-free composite of GOCI reflectance and vegetation index. Since GOCI does not have SWIR and TIR spectral bands, which are very effective to separate clouds from other land cover types, we developed a multi-temporal approach to detect cloud. The proposed cloud detection method consists of three sequential steps of spectral tests. Firstly, band 1 reflectance threshold was applied to separate confident clear pixels. In second step, thick cloud was detected by the ratio (b1/b8) of band 1 and band 8 reflectance. In third step, average of b1/b8 ratio values during three consecutive days was used to detect thin cloud having mixed spectral characteristics of both cloud and land surfaces. The proposed method provides four classes of cloudiness (thick cloud, thin cloud, probably clear, confident clear). The cloud detection method was validated by the MODIS cloud mask products obtained during the same time as the GOCI data acquisition. The percentages of cloudy and cloud-free pixels between GOCI and MODIS are about the same with less than 10% RMSE. The spatial distributions of clouds detected from the GOCI images were also similar to the MODIS cloud mask products.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.838-844
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• 2000

For the fabrication of titanium diboride($TiB_2$)- based cermet as applications of cutting tools and wear resistant materials, a binder metal with good mechanical properties and sinterability is essential. In this study, SUS316L was chosen for the binder metal to obtain a new $TiB_2$ cermet with superior hardness and toughness.$TiB_2$-SUS316L cermets were densified to relative density of more than 99% by pressureless sintering at temperature above $1650^{\circ}C$ The flexural strength was up to 1290MPa at 10vo1%SUS316L cermet in spite of the formation of $Fe_2$B phase during the sintering. The fracture toughness was obtained up to $6MPam^{1/2}$ with Victors hardness over 18Gpa. These hardness and fracture toughness combinations are better than those of conventional cermet. The high temperature strength remarkably decreased by the plastic deformations of SUS316L binder phase at nearby $800^{\circ}C$ .

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.98-101
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• 2007

A fully integrated 5-GHz CMOS power amplifier for IEEE 802.11a WLAN applications is implemented using $0.18-{\mu}m$ CMOS technology. An on-chip transmission-line transformer is used for output matching network and voltage combining. Input balun, inter-stage matching components, output transmission line transformer and RF chokes are fully integrated in the designed amplifier so that no external components are required. The power amplifier occupies a total area of $1.7mm{\times}1.2mm$. At a 3.3-V supply voltage, the amplifier exhibits a 22.6-dBm output 1-dB compression point, 23.8-dBm saturated output power, 25-dB power gain. The measured power added efficiency (PAE) is 20.1 % at max. peak, 18.8% at P1dB. When 54 Mbps/64 QAM OFDM signal is applied, the PA delivers 12dBm of average power at the EVM of -25dB.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.6-13
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• 2018

Well-modified amino-appended ${\beta}$-cyclodextrin ($AA-{\beta}-CD$) with an amino group at the primary face of the ${\beta}-CD$ was synthesized and used in the catalytic synthesis of chromeno pyrimido[1,2-b]indazol as supramolecular catalysts in water for the first time. $AA-{\beta}-CD$ was characterized by FT-IR, NMR, MALDI-TOF mass spectrometry, and SEM analysis. A possible reaction mechanism featuring molecular complexation was suggested based on 2D NMR (ROESY) spectroscopy, FE-SEM, DSC, and FT-IR. Advantages such as operational simplicity, recyclability of the catalysts, and accessibility in aqueous medium render this protocol eco-friendly.

• Nonlinear Functional Analysis and Applications
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• v.28 no.2
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• pp.557-570
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• 2023

The conceptions of generalized b-metric spaces or G_b-metric spaces and a generalized Ω-distance mappings play a key role in proving many important theorems in existence and uniqueness of fixed point theory. In this manuscript, we establish a new type of contraction namely, Ω_b(𝓗, 𝜃, s)-contraction, this contraction based on the concept of a generalized Ω-distance mappings which established by Abodayeh et.al. in 2017 together with the concept of 𝓗-simulation functions which established by Bataihah et.al [10] in 2020. By utilizing this new notion we prove new results in existence and uniqueness of fixed point. On the other hand, examples and application were established to show the importance of our results.

• The Journal of the Korea Contents Association
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• v.6 no.4
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• pp.1-10
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• 2006

In this paper, a broadband RF module is designed and tested for 2.4GHz band applications. The RF module is composed of a low noise amplifier (LNA) with a three stage amplifier, a single ended gate mixer, matching circuits, a hairpin line band pass filter and a Chebyshev low pass filter to convert the radio frequency (RF) into the intermediate frequency (IF). The LNA has a high gain and stability, and the single ended gate mixer has a high conversion gain and wide dynamic range. In the analysis of the broadband RF module, the composite harmonic balance technique is used to analyze the operating characteristics of an RF module circuit. The RF module has a 55.2dB conversion gain with a 1.54dB low noise figure, $-120{\sim}-60dBm$ wide RF power dynamic range, -60dBm low harmonic spectrum and a good isolation factor among the RF, IF, and local oscillator (LO) ports.

• Progress in Superconductivity and Cryogenics
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• v.23 no.4
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• pp.14-18
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• 2021

The Mg-Powder-Compaction (MPC) process is proposed to fabricate the MgB₂ superconducting wires. Mg powder wall, similar to the Mg metal tube, inside the Nb outer sheath has been made and the stochiometric B powder was inserted into the wall. Even though the very high MgB₂ core density of 2.53 g/cm³ is obtained, the superconducting area fraction of MgB₂ is not high enough for the applications. In this work, an advanced MPC process was adopted by adding Mg powder into B powder. The Mg powder wall in the initial wire was fabricated by controlling the wall thickness while maintaining a constant density, and the mixture of B and Mg powder was filled into the Mg powder wall with the same filling density. It is found that the reduction in the area of the Mg powder wall proceeds similar to the wire, and the Mg powder wall is well maintained at the final wire diameter, which is advantage for the fabrication of long wires. With the advanced MPC process, as the added Mg is increased the densities of MgB₂ core is decreased and the porous structure is formed, it is found that the area fraction of superconducting MgB₂ increase up to the 37.7 % with the improved high critical current density (J_c) and the engineering critical current density (J_e).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.89-94
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• 2007

For successful implementation of multi-standard transmitter, reconfigurable architecture and component design are essential. This paper presents a reconfigurable CMOS power amplifier designed CMOS 0.25 um process. Designed power amplifier can be operated at 0.9, 1.2, 1.75, and 1.85 GHz. Also, it can be used at 2.4 GHz by using bonding wire inductor. The interstage matching network is composed of two inductors and four switches, and operation frequency can be varied by controlling switches. Proposed power amplifier can be used as a power amplifier in low power applications such as ZigBee or Bluetooth application and used as a driver amplifier in high power application such as CDMA application. Designed power amplifier has 18.2 dB gain and 10.3 dBm output power at 0.9 GHz. Also, it represented 10.3 (18.1) dB gain and 5.2 (10) dBm output power at 1.75 (2.4) GHz.