• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.103-109
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• 2006

This paper suggests an efficient and comprehensive algorithm of the protection ratio derivation and illustrates some calculated results applicable to the initial planning of frequency coordination in the fixed wireless access networks. The net filter discrimination associated with Tx spectrum mask and overall Rx filter characteristic has been also examined to show the effect of the adjacent channel interference. The calculations for co-channel and adjacent channel protection ratios are performed for the current microwave frequency band of 6.7 GHz including Tx spectrum mask and Rx filter response. According to results, fade margin and co-channel protection ratio reveal 41.4 and 75.2 dB, respectively, for 64-QAM and 60 km at BER $10^{-6}$. It is shown that the net filter discrimination with 40 MHz channel bandwidth provides 28.9 dB at the first adjacent channel, which yields 46.3 dB of adjacent channel protection ratio. In addition, the protection ratio of 38 GHz radio relay system is also reviewed for millimeter wave band applications. The proposed method gives some advantages of an easy and systematic extension for protection ratio calculation and is also applied to frequency coordination in fixed millimeter wave networks.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.163-166
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• 2005

Multilayer LTCC technology enables RF modules to be reduced dramatically by taking advantage of the three dimension flexibility. Compared to a conventional two dimensional PCB, LTCC allows higher density, reduced size, and lower cost. In this research, BPF based on LTCC for 900MHz ZigBee application was implemented which can replace SAW filter with using the material of the Dupont9599's dielectric constant 7.8. And distributed baud pass filter for 900MHz ZigBee system applications is presented. Using resonator stripline and capacitance, 2nd order band pass filter was designed. Adjusting resonator's length and capacitance is easy to tune at accurate center frequency by shifting band because ZigBee system is using narrow bandwidth, $902MHz^{\sim}928MHz$. Also resonator has no limitation in space, so reducing size is possibile. Designed filter had I.L. 2.8dB at 915MHz and attenuation at 815MHz, 1015MHz was 16dB, 15dB, respectively. Therefore, the sharpe cut-off and good insertion loss for ZigBee system application.

• Journal of electromagnetic engineering and science
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• v.17 no.2
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• pp.65-70
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• 2017

The design and implementation aspects of a new single-balanced mixer for ultra-wideband (UWB) applications are presented in this study. The proposed mixer utilizes a miniaturized UWB ring coupler as a balun, consisting of a pair of in-phase and inverted-phase transitional structures. The well-balanced UWB performance of the ring coupler, aside from the optimized diode matching, results in improved conversion loss and inter-port isolations for a wide bandwidth. The size of the implemented single-balanced diode mixer is reduced to about 60% of the area of the conventional single-balanced ring diode mixer. The measured results of the proposed mixer exhibit an average conversion loss of 7.5 dB (minimum 6.7 dB) and a port-to-port isolation of greater than 18 dB over a UWB frequency range of 3.1-10.6 GHz. The measured results agree well with the simulated results.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.4
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• pp.27-37
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• 2001

The design, fabrication, and an experimental implementation of the strip patch antenna coupled with a H-shaped aperture arc presented in this paper. The proposed antenna has the wide bandwidth, high gain, and low cross-polarization levels. We measured the VSWR, smith chart impedance characteristic, co/cross polarization pattern, gain, and so on. The measured bandwidth of this antenna is 47.1 %. To reduce the back lobe and increase the gain, when the reflector is used, cross polarization level is below -18.2dB at E-plane and below 25.7 dB at H -plane. The maximum gain at 2.05 GHz is also 10.4 dBi and the 3 dB gain bandwidth with center frequency at 2.17 GHz is 24 %, which is the wide bandwidth. This antenna can find applications in mobile communication, wireless LAN, RF communication system, and so on.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.10A
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• pp.1223-1229
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• 2004

A variable-gain low-voltage low noise amplifier MMIC operating at 5GHz frequency band is designed and implemented using the ETRI 0.5$\mu\textrm{m}$ GaAs MESFET library process. This low noise amplifier is designed to have the variable gain for adaptive antenna array combined in HIPERLAN/2. The feedback circuit of a resistor and channel resistance controlled by the gate voltage of enhancement MESFET is proposed for the variable-gain low noise amplifier consisted of cascaded two stages. The fabricated variable gain amplifier exhibits 5.5GHz center frequency, 14.7dB small signal gain, 10.6dB input return loss, 10.7dB output return loss, 14.4dB variable gain, and 2.98dB noise figure at V$\_$DD/=1.5V, V$\_$GGl/=0.4V, and V$\_$GG2/=0.5V. This low noise amplifier also shows-19.7dBm input PldB, -10dBm IIP3, 52.6dB SFDR, and 9.5mW power consumption.

• Journal of The Korean Society of Grassland and Forage Science
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• v.23 no.2
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• pp.81-90
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• 2003

This pot experiment was conducted to find out the effects of boron application(B$_{0}$; 0.0, B$_1$; 0.2, $B_2$;2.0, $B_3$;6.0, $B_3$;6.0, $B_4$;15.0me B/pot) on the forage performance in the pure and mixed swards of orchardgrass and white clover. This 1st part was concerned with the changes in the growth, flowers and flower buds, and roots/nodules of forages. The results obtained are summarized as follows: 1. At the $B_3$ and $B_4$ treatments, the B toxicity was more seriously in white clover than in orchardgrass in the first half of cutting orders, and reduced in the latter half. In white clover, it was more worsened in a mixture than in a pure culture. It was somewhat reduced at the best growth stage of each forage. 2. In orchardgrass, the B toxicity($B_3$,$ B_4$) showed the chlorosis on leaf tips, shallow leaf, little tillers, and weak stems. Whereas it showed the chlorosis/necrosis on old leaf edge, little and weak stolons in white clover. 3. Comparing with the B deficiency($B_{0}$ , $B_1$) and toxicity($B_3$, $B_4$), the optimum B application($B_2$) influenced markedly good growth of shoot, root, nodule, and flower (flower number, blooming period, early full flower) in white clover. 4. Comparing with orchardgrass, white clover was greatly influenced by the boron application. However, this responses of white clover to boron were reduced in a grass-clover mixture with additional fertilization. It was recognized that the good forage performance in a grass-clover mixture could be regulated by the adequate applications of boron and additional fertilizers.s.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.52 no.2
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• pp.80-86
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• 2003

In this paper, a new three-phase voltage-source inverter topology for high voltage and high Power applications is proposed to improve the quality of output voltage waveform. A chain converter which is used as an auxiliary circuit generates a ripple voltage and injects it to the conventional 12-step inverter. Thus, the injection of the ripple voltage results in 36-step operation with a link and 60-step operation with two links. The proposed inverter is compared to the conventional multilevel inverter in the viewpoint of ratings of phase- shifting transformers, switching devices and capacitors employed. The proposed scheme is simple to control capacitor voltages compared to the conventional schems and is cost effective for high voltage and high power application over several tens of MVA. The proposed approach is validated through simulation, and the experimental results are provided from a 2KVA laboratory prototype.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.86-91
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• 2016

Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (- 87.5 dB) and low insertion loss (- 0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.

• ETRI Journal
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• v.34 no.5
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• pp.767-770
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• 2012

This letter presents a novel compact circularly polarized patch antenna for Global Positioning System/Global Navigation Satellite System (GPS/GLONASS) applications. The proposed antenna is composed of a simple square radiating patch fed by a capacitive dual-feeder to increase the impedance bandwidth and a lumped element hybrid coupler to achieve the broadband characteristic of the axial ratio (AR). The realized antenna dimensions are $28mm{\times}28mm{\times}4mm$, which is the most compact size among the dual-band GPS/GLONASS antennas reported to date. The measured results demonstrate that the proposed antenna has a gain of 2.5 dBi to 4.2 dBi and an AR of 0.41 dB to 1.51 dB over the GPS/GLONASS L1 band (1.575 GHz to 1.61 GHz).

• Journal of IKEEE
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• v.16 no.2
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• pp.127-130
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• 2012

In this paper, we reported on a single balanced monolithic diode mixer using Marchand balun for millimeter-wave applications. The single balanced monolithic mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process. The average conversion loss is 16 dB in the RF frequency range of 81~86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-to-LO isolation characteristics are greater than -30 dB and the total chip size is $1.0mm{\times}1.35mm$.