• Journal of the Korean Ceramic Society
• /
• v.38 no.11
• /
• pp.993-999
• /
• 2001

Phase formation and proton conduction in BaO doped LaSc $O_3$with perovskite structure were studied. L $a_{0.6}$B $a_{0.4}$Sc $O_{2.8}$, viz. 40at% $Ba^{2+}$ ion doped composition, showed a single cubic phase, while the other compositions doped less than 30 at% $Ba^{2+}$ ion showed the cubic phase and the orthorhombic one. Above $650^{\circ}C$ oxygen ion conduction was dominant in $N_2$atmosphere and below this temperature proton conduction was observed in wet atmosphere. All compositions were found to be the pure proton conductors below 30$0^{\circ}C$. The proton conductivity (bulk) of L $a_{0.6}$B $a_{0.4}$Sc $O_{2.8}$ was higher than those of any other composition.osition.ion.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.141-141
• /
• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Journal of the Korean Ceramic Society
• /
• v.48 no.5
• /
• pp.471-478
• /
• 2011

Investigations of crystal structure and phase transition of $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics doped with A-site substitution impurity (La, Nd) or B-site substitution impurity (Sb, Nb) at 2 mol% concentration were carried out. X-ray diffraction patterns of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics have been measured at pressures up to ~5 GPa with diamond anvil cell and synchrotron radiation. The patterns were obtained at room temperature using methanol-ethanol mixture as pressure-transmitting media. In order to refine the crystal structure, Rietveld analysis has been performed. The structures of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics are tetragonal in space group P4mm at ambient pressure and are transformed into a cubic phase in space group Pm$\bar{3}$m as the pressure increases. In this study, when A-site substitution donor $La^{3+}$ or $Nd^{3+}$ ion was added to $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics, the phase transition phenomena showed up at the pressure of 2.5~4.6 GPa, but when B-site substitution donor $Nb^{5+}$ or $Sb^{5+}$ ion was added to it, the phase transition appeared at relatively lower pressure of 1.7~2.6 GPa.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1355-1359
• /
• 2006

Due to its efficient red emission, $Eu^{3+}$ ion has been doped in various host materials. $GdCa_4B_3O_{10}:Eu^{3+}$ phosphor for red emission has been prepared by solid state reaction. Photoluminescence properties for the phosphor under UV and VUV excitation were investigated. The $GdCa_4B_3O_{10}:Eu^{3+}$ phosphor under both excitation conditions shows typical red emission spectrum centered at 611 nm with several weak peaks due to energy transfer from $^5D_O\;to\;^7F_J(J=1,2,3,4)$ of $Eu^{3+}$ ion. On the other hand, the activator content exhibiting the concentration quenching under UV and VUV irradiation is 10 mole% and 2.5 mole%, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.5
• /
• pp.45-51
• /
• 1993

An erbium doped fiber amplifier(EDFA) pumped by aingle 1.48$\mu$m LD was fabricated, and its gain and noise characteristics were measured. As a signal source, 1548 nm wavelength DFB LD was used. The small signal net gain of the EDFA module was 21.8 dB with maximum gain coefficient 0.7dB/mW for the erbium fiber length of 17.6 m, the pump power of 58 mW, and an input signal power of -25 dBm, respectively. The saturation power of the EDFA was 1 dBm for the input signal power of -5 dBm and the noise figure, measured by using an optical spectrum analyzer, was 5.8 dB for the input signal power of -40 dBm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.4
• /
• pp.343-348
• /
• 2000

NCZF ferrites doped with B-Bi-Zn(35-25-40) glass ceramics were prepared to investigate the magnetic properties. The XRD peaks of all of samples were observed only spinel phase. As the additive increased at sintering temperature 750$^{\circ}C$ and 850$^{\circ}C$ for 3 hours, the density and shrinkage of the samples increased until 5.28 g/cm$^3$ and 20% respectively. And other samples showed constant trends having the density about 5.4g/cm$^3$. According to SEM images the growth of grain progressed rapidly at sintering temperature of 850$^{\circ}C$ for 3 hours. Increasing the additive initial permeability and complex permeability decreased. The high values of complex permeability as a function of frequency showed that NCZF doped with 3 wt%, 5wt%, samples at sintered temperature of 850$^{\circ}C$/3h and 900$^{\circ}C$/3h.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.3
• /
• pp.96-100
• /
• 2008

The microstructure, voltage-current, and capacitance-voltage relations ofP CCYA doped ZnO-based varistors were investigated for different amounts of $Al_2O_3$. As the $Al_2O_3$ amount increased, the average grain size (d) increased from d=4.3 to $d=5.5{\mu}m$ and the sintered density $({\rho})$ increased from ${\rho}=5.63$ to ${\rho}=5.67g/cm^3$. As the $Al_2O_3$ amount increased, the breakdown voltage $(V_B)$ increased from $V_B=633$ to $V_B=71$ V/mm and the non-ohmic coefficient $({\alpha})$ increased from ${\alpha}=47$ to ${\alpha}=4$. $Al_2O_3$ served as a donor due to the donor density $(N_d)$, which increases in the range of $N_d=0.77-1.85{\times}10^{18}/cm^3$ with increasing amount of $Al_2O_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.12
• /
• pp.1082-1086
• /
• 2007

Optical characteristics of $YCOB(YCa_4B_3O_{10})$, known as a crystal of self frequency doubling, was investigated when Yb and Er ions were co-doped 20 % and 2 %, respectively. The absorption cross section of Er,Yb:YCOB crystal at $1.0\;{\mu}m$ was larger than that of Yb:YCOB, which means that the former was profitable for more energy absorption than the latter. The fluorescent lifetime at $1.5\;{\mu}m$ was measured to be 1.27 ms at room temperature, and lengthened to 1.54 ms and 1.62 ms at low temperatures of 77 K and 6 K, respectively. The line widths of fluorescent spectrum at $1.5\;{\mu}m$ were getting narrower as lowering temperature. However, we didn't observe a temperature dependent peak wavelength shift.

• Proceedings of the Optical Society of Korea Conference
• /
• 2002.11a
• /
• pp.172-173
• /
• 2002

An erbium-ytterbium co-doped phosphate glass waveguide amplifier, fabricated by two-step ion-exchange, is presented. The performance of the amplifiers are investigated in viewpoints of net gain, pump power, and noise figure. The waveguide has propagation loss of 0.7 dB/cm Including insertion loss at 1.304 $\mu\textrm{m}$. At a signal wavelength of 1.534 $\mu\textrm{m}$, a high net gain of 12.8 dB and low noise figure of less than 3.9 dB are archived in a 4 cm long waveguide when injected by 140 ㎽ of LD pump at 0.98$\mu\textrm{m}$ in single pass configuration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.11
• /
• pp.1000-1004
• /
• 2006

In this paper, thermal stability of Ni-silicide formed on the SOI substrate with $B_{11}$ has been characterized. The sheet resistance of Ni-silicide on un-doped SOI and $B_{11}$ implanted bulk substrate was increased after the post-silicidation annealing at $700^{\circ}C$ for 30 min. However, in case of $B_{11}$ implanted SOI substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min. The main reason of the excellent property of $B_{11}$ sample is believed to be the retardation of Ni diffusion by the boron and bottom oxide layer of SOI. Therefore, retardation of Ni diffusion is highly desirable lot high performance Ni silicide technology.