• Journal of the Korean Chemical Society
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• v.45 no.6
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• pp.577-588
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• 2001

Eu doped YRO$_4$ (R=As, Nb, P, V) red phosphors were prepared by the combinatorial chemistry method. The quaternary material library of tetrahedron-type composition array was designed to investigate the luminescence of the host material under UV and VUV excitations (254, 147 nm). The photoluminescent characteristics of the samples were comparable to the commercially available red phosphors such as (Y, Gd)BO$_3$: $Eu^{3+}$ and Y$_2$O$_3$: In view of the luminescence yield, V rich region was found to be optimum under UV excitation. But the results under VUV excitation were different from those of UV excitation, the samples of the composition containing a large amount of P shows the highest luminescence. Especially, higher luminescence was obtained in $Y_{0.9}$(A$S_{0.06}$N$B_{0.06}P_{0.83}V_{0.06}$) O$_4$: $Eu_{0.1}$ phosphors than commercial (Y, Gd)BO$_3$red phosphors under 147 nm excitation.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.168-172
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• 2006

We studied the magnetic and the related electronic properties of Ni-doped rutile $TiO_{2-{\delta}}$ films (including oxygen deficiency $\delta$) prepared using a sol-gel method. A room-temperature ferromagnetism was observed in the $TiO_{2-{\delta}}$ : Ni films with the saturation magnetization ($M_S$) decreasing with increasing Ni doping and remaining constant above 6 at% Ni doping. The observed ferromagnetism below 6 at% Ni doping is interpreted as due to magnetic polaron formed by a trapped electron in oxygen vacancy and magnetic impurity ions around it. For small Ni doping, $M_S$ up to $3.7{\mu}B/Ni$ was obtained. The ferromagnetism for Ni doping above 6 at% is interpreted as due to the existence of Ni clusters that can explain the p-n conductivity transition observed by Hall effect measurements.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.553-561
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• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.

• Journal of Biomedical Engineering Research
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• v.18 no.3
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• pp.243-251
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• 1997

In this paper, we have reported two interesting flow effects arising in the TRFGE sequence using water flow phantom. First, we have shown that the TRFGE sequence is indeed not affected by "in-flow" effect from the unsaturated spins flowing into the imaging slice. Second, the enhancement of "in-plane flow" signal in the readout gradient direction was observed when the TRFGE sequence was used without flow compensation. These two results have many interesting applications in MR imaging other than fMRI. Results obtained were also compared with the results obtained by the conventional gradient echo(CGE) imaging. Experiments were performed at 4.7T MRI/S animal system (Biospec, BRUKER, Switzerland). A cylindrical phantom was made using acryl and a vinyl tube was inserted at the center(Fig. 1). The whole cylinder was filled with water doped with $MnCl_2$ and the center tube was filled with saline which flows in parallel to the main magnetic field along the tube. Tailored RF pulse was designed to have quadratic ($z^2$) phase distribution in slice direction(z). Imaging parameters were TR/TE = 55~85/10msec, flip angle = $30^{\circ}$, slice thickness = 2mm, matrix size = 256${\times}$256, and FOV= 10cm. In-flow effect : Axial images were obtained with and without flow using the CGE and TRFGE sequences, respectively. The flow direction was perpendicular to the image slice. In-plane flow : Sagittal images were obtained with and without flow using the TRGE sequence. The readout gradient was applied in parallel to the flow direction. We have observed that the "in-flow" effect did not affect the TRFGE image, while "in-plane flow" running along the readout gradient direction enhanced the signal in the TRFGE sequence when flow compensation gradient scheme was not used.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.5
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• pp.181-186
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• 2023

In this study, novel Eu₂O₃-BaF₂-La₂O₃-B₂O₃ oxyfluoride glasses and glass ceramics were developed by a containerless processing. Differential thermal analysis (DTA) analysis was performed to analyze the thermophysical properties of oxyfluoride glasses doped with Eu₂O₃, and photoluminescence (PL) characteristics were analyzed to evaluate the luminous efficiency depending on the degree of crystallinity. The glass transition temperature decreased with increasing BaF₂ concentration since BaF₂ acts as a network modifier in this glass system. In addition, thermal stability which can be estimated by the difference between the glass transition temperature and the onset temperature of the crystallization decreased with increasing BaF₂ contents. The peak related to the BaF₂ crystal was confirmed after the crystallization by X-ray Diffraction (XRD) analysis. Photoluminescence intensity increased after the crystallization which indicates that the Eu³⁺ ions are sited in BaF₂ crystal. La 3d_5/2 x-ray photoelectron spectroscopy (XPS) and F1s XPS spectra were analyzed to precisely understand the behavior of the fluorine ion in the glass structure. Fluorine tends to bond with the network modifying cations such as La³⁺ and Ba²⁺ ions and after the crystallization the La-F bonds decreased because F^- ions used to form BaF₂ crystals.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.453-457
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• 2007

Zinc oxide (ZnO) and Ga doped zinc oxide (GZO) with different thickness in range of 10nm to 100nm are prepared on glass substrate by RF magnetron sputtering at room temperature. The structural and optical properties of the thin films is evaluated. The structural properties of ZnO and GZO are investigated by Tunneling Electron Microscopy (TEM) and scanning electron microscopy (SEM). Optical properties are also investigated by UV-VIS-NIR spectrophotometer (200$\sim$1400nm). The much larger grain size of ZnO compared to GZO decreased the light scattering at the grain boundary and improved the transmittance. The transmittance of ZnO is higher than that of GZO through all of the ranges of wavelengths. In case of over 50nm, we found that the transmittance of ZnO is 20% higher than that of GZO.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.260-260
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• 2013

Multiferroic materials have attracted much attention due to their fascinating fundamental physical properties and technological applications in magnetic/ferroelectric data-storage systems, quantum electromagnets, spintronics, and sensor devices. Among single-phase multiferroic materials, $BiFeO_3 $ is a typical multiferroic material with a room temperature magnetoelectric coupling in view of high magnetic-and ferroelectric-ordering temperatures (Neel temperature $T_N$~647 K and Curie temperature $T_C$~1,103 K). Rare-earth ion substitution at the Bi sties is very interesting, which induces suppressed volatility of Bi ion and improved ferroelectric properties. At the same time, Fe-site substitution with magnetic ions is also attracting, and the enhanced ferromagnetism was reported. In this study, $Bi_{1-x}Dy_xFe_{0.95}Co_{0.05}O_3$ (x=0, 0.05 and 0.1) bulk ceramic compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Dy_2O_3$, $Fe_2O_3$ and $Co_3O_4$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ or 24 h to produce $Bi_{1-x}Dy_xFe_{0.95}Co_{0.05}O_3$. The samples were immediately put into an oven, which was heated up to $800^{\circ}C$ nd sintered in air for 30 min. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The electric polarization was measured at room temperature by using a standard ferroelectric tester (RT66B, Radiant Technologies).

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.47-52
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• 2005

Worldwide movement for prohibition of Pb usage drives imminent implementation of Pb-free solders in microelectronic packaging industry. Reliability information of Pb-free solders has not been completely constructed yet. One of the potential reliability concerns of Pb-free solders is allotropic transformation of Sn known as tin pest. Volume increase during the formation of tin pest could deteriorate the reliability of solder joints. It was also reported that the addition of soluble elements (i.e. Pb, Bi, and Sb) into Sn can effectively suppress the tin pest. However, the mechanical properties of the tin pest resistant alloys have not been studied in detail. In this study, lap shear creep test was conducted with Sn and Sn-0.7Cu based solder alloys doped with minor amount of Bi or Sb. Shear strain rates of the alloy were generally higher than those of Sn-3.5Ag based alloys. Rupture strains and corresponding Monkman- Grant products were largest for Sn-0.5Bi alloy and smallest for Sn-0.7Cu-0.5Sb alloy. Rupture surface Sn-0.5Bi alloy showed highly elongated $\beta$-Sn globules necked to rupture by shear stresses, while elongation of $\beta$-Sn globules of Sn-0.7Cu-0.5Sb alloy was relatively smaller.