• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.394-397
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• 2012

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.1-7
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• 2001

Single-layer polymer green electroluminescent devices were fabricated with novel material synthesis by using moleculely-dispersed TTA and NIDI into the polymer PC(B79) emitter layer doped with C6 fluorescent dye which has low operating voltage and high quantum efficiency. A EL cell structure of glass substrate/indium-tin-oxide/PC:TTA:NIDI:C6/Ca/Al was employed and compared with various low work function cathode electrodes Ca and Mg metals. By adjusting the concentration of the fluorescent dye C6, low turn-on voltage of 2.4V was obtained, maximum quantum efficiency of 0.52% at 0.08mole% has been improved by about a factor of ~50 times in comparison with the undoped cell. The PL and EL colors can't be turned by changing the concentration of the C6 dopant. PL emission peaking was obtained at 495nm and EL emission peaking at 520nm with FWHM ~70nm

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.2
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• pp.600-604
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• 2011

In this paper, the scintillation properties of $LaCl_3:Eu^{2+}$ crystal were investigated as new scintillator. This scintillation material was grown by a Czochralski method. $LaCl_3:Eu^{2+}$ was determined to have a hexagonal $P_63$/m space group with cell parameters a = b = $7.48{\AA}$, c = $4.37{\AA}$. Under 335 nm UV excitation, the crystal shows a broad emission band between 370 nm and 640 nm wavelength range, peaking at 430 nm. At room temperature, the crystal exhibits one exponential decay time component. The component of scintillation time profile of the crystal emission decays with a $2.82{\pm}0.72{\mu}s$ time constant. The energy resolution of the crystal was measured to be 8.8% (FWHM) for $^{137}Cs$ 662 keV ${\gamma}$-rays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.6-9
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• 1993

In this study, Sintering behavior, Crystallographic structure, Microwave Dielectric properties of the nonstoichiometric Ba$\_$1-x/(Zn$\_$1/3/Ta$\_$2/3/)O$_3$with 0 x 0.04 were investigated. A small amount(lmol%) of MnO$_2$is doped to the sample to complete the sintering. The degree of Zn and Ta ordering in B site and Lattice distortion were promoted by reducing Ba concentration. At x=0.01, Unloaded Q value reached above 7500 (at 10.5 GHZ) ; however, above x=0.01, Q value was greatly decreased, in spite of saturation in Zn-Ta ordering. At x=0.01, The Dielectric constant was 30 at 10.5GHz. and The Temperature Coefficient was estimated as 2ppm/$^{\circ}C$.

• Information and Communications Magazine
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• v.11 no.2
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• pp.77-89
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• 1994

High speed optical fiber transmission technology has been remarkably improved during the past 20 years. This paper presents recent research status and future technological issues for the future information society, that is, the Tb/s transmission by frequency division multiplexing and the ultra long-distance by optical soliton transmission. Erbium-doped fiber amplifier and recent optical technology have brought optical transmission system of up to 10 Gb/s to the point of commercialization. Taking into account the future super information highway, that is, B-ISDN network, ultra wide-band picture-based information can be provided for many subscribers via existing optical fiber cables. However, to achieve the high speed transmission, the technologies must be developed not only for transmission lines but also for transmission nodes. Since the conventional signal transmission/processing technique using electronics has the limit in its speed, novel photonic technology is being developed for this purpose. On the other hand, optical solitons propagate stably through optical fibers, without pulse broadening effect of the fiber dispersion. Since the pulse broadening effect becomes serious as the transmission speed increases, optical solitons is the important technologies to realize the high speed, long distance transmission.

• Korean Journal of Optics and Photonics
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• v.15 no.6
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• pp.490-494
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• 2004

Bragg gratings were fabricated in Ge-doped silica planar lightwave circuits (PLC) for different writing conditions to study the growth characteristics. The refractive index modulation of the gratings grew in the PLC with total fluence F according to the power law $\Delta$n=A $F^{B}$. The characteristics of the PLC gratings formed for external cavity lasers match closely to those predicted by the power law. The oscillation spectra of the FP-LD with a Bragg grating grown in the PLC waveguide were also presented.d.

• Applied Chemistry for Engineering
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• v.25 no.6
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• pp.613-618
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• 2014

In this study, nitrogen doped graphene oxide (GO) was prepared using liquid phase ammonia treatment to improve its electrical properties. Also, the aminated GO was manufactured into a film format and the electromagnetic interference (EMI) shielding efficiency was measured to evaluate its electrical properties. The XPS result showed that the increase of liquid phase ammonia treatment concentration led to the increased nitrogen functional group on the GO surface. The measurement of EMI shielding efficiency reveals that EMI shielding efficiency of the liquid phase ammonia treated GO was better than that of non-treated GO. When GO was treated using the ammonia solution of 21% concentration, the EMI shielding efficiency increased by -5 dB at higher than 2950 MHz. These results were maybe due to the fact that nitrogen functional groups on GO help to improve the absorbance of electromagnetic waves via facile electron transfer.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.109-112
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• 2005

Electronic and magnetic properties of $Ti_{1-x}M_xO_{2-\delta}$ (M=Co and Fe) thin films grown by sol-gel method have been investigated. Anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films were successfully grown on $Al_2O_3$ (0001) substrates and exhibited p-type electrical conductivity while the undoped films n-type conductivity. Room temperature vibrating sample magnetometry measurements on the anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films with same x ($=4.8 at.{\%}$) showed quite similar magnetic hysteresis curves with the saturation magnetic moment of $\~4 {\mu}_B$ per Co ion despite their differences in structural and electronic properties. Such giant magnetic moment is attributable to the unquenched orbital moment of the $Co^{2+}$ ions substituting the octahedral $Ti^{4+}$ sites. Similar ferromagnetic behavior was observed for $Ti_{1-x}Fe_xO_{2-\delta}$ films that are highly resistive compared to the Co doped samples. Saturation magnetic moment was found to decrease for higher x, i.e., $\~2$ and $\~1.5 {\mu}_B$ per Fe ion for x=2.4 and 5.8 at. $\%$, respectively. Conversion electron $M\ddot{o}ssbauer$ spectroscopy measurements predicted the coexistence of $Fe^{2+}$ and $Fe^{3+}$ ions at the octahedral sites of $Ti_{1-x}Fe_xO_{2-\delta}$.

• Electrical & Electronic Materials
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• v.5 no.2
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• pp.198-206
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• 1992

(P $b_{1-x}$L $a_{x}$)[(S $b_{1}$2/S $n_{1}$2/) $Ti_{y}$ Z $r_{1-y}$] $O_{3}$(0.leq.x.leq.0.04, 0.25.leq.y.leq.0.40) 세라믹을 1250[.deg.C]에서 2시간동안 유지시켜 일반 소성법으로 제작하였으며 조성 및 L $a_{2}$ $O_{3}$첨가량에 따른 구조적, 압전적 특성을 관찰하였다. L $a_{2}$ $O_{3}$의 첨가량이 3-4[mol%]인 경우 La-rich의 pyrochlore상이 형성되었다. 시편의 평균결정립 크기는 1-2[.mu.n]의 크기를 나타내었으며 PbTi $O_{3}$조성이 증가함에 따라 다소 감소하는 경향을 나타내었다. 각 조성의 시편에 대해 PbTi $O_{3}$ 및 L $a_{2}$ $O_{3}$의 첨가량이 증가할수록 유전상수는 증가하는 경향을 나타내었으며 상전이 온도인 큐리온도는 PbTi $O_{3}$조성이 감소할수록 L $a_{2}$ $O_{3}$첨가량이 증가할수록 감소하는 경향을 나타내었다. 압전 전하계수 및 전기기계 결합계수는 L $a_{2}$ $O_{3}$첨가량 및 PbTi $O_{3}$조성에 따라 증가하였으며 L $a_{2}$ $O_{3}$가 4[mol%]첨가된 0.10PSS-0.40PT-0.50PZ 시편에서 각각 250x$10^{-12}$[C/N], 29.7[%]의 최대값을 나타내었다. 기계적 품질계수는 L $a_{2}$ $O_{3}$첨가량 및 PbTi $O_{3}$조성이 증가할수록 감소하는 경향을 나타내었으며 0.10PSS-0.25PT-0.65PZ 시편에서 138의 최대값을 나타내었다.다.

• Korean Journal of Materials Research
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• v.34 no.9
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• pp.448-455
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• 2024

We conducted a study on excessive doping of the Cr and In elements in Bi-Sb-Te materials satisfying the Hume-Rothery rule, and investigated the resulting electrical and thermal properties. From X-ray diffraction (XRD) results, we confirmed the formation of a single phase even with excessive doping. Through analysis of electrical properties, we observed the highest enhancement in electrical characteristics at y = 0.2, suggesting that the appropriate ratio of Bi-Sb significantly influences this enhancement. Using the Callaway-von Baeyer (CvB) model to assess scattering due to point defects, we calculated the experimental point defect scattering factor (Γ_CvB.exp), which was notably high due to the substantial differences in volume and atomic weight between the substituted (Cr, In) and original (Bi, Sb) elements. Additionally, we conducted a single parabolic band (SPB) modeling analysis of materials with compositions y = 0.1 and 0.2, where, despite a decrease in density-of-states effective mass (m_d^*) during the enhancement process from y = 0.1 to 0.2, a sharp increase in non-degenerate mobility (μ₀) led to an 88 % increase in weighted mobility (μ_w). Furthermore, analyzing zT with respect to n_H revealed a 51 % increase in zT at a composition of y = 0.2. This study confirmed a significant reduction in lattice thermal conductivity with the co-doping strategy, and with further compositional studies to improve electrical properties, we anticipate achieving high zT.