• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.22-28
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• 2009

We investigated the sintering and electric properties of ZnO-1.0 at% $TeO_2$ (ZT1) and 1.0 at% Mn-doped ZT1(ZT1M1) system. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ or $Zn_2Te_3O_8$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. In ZT1M1 system, also, the densification of ZnO was retarded up to $1000^{\circ}C$ and then reached > 90% of theoretical density above $1100^{\circ}C$. It was found that a good varistor characteristics(nonlinear coefficient $a{\sim}60$) were developed in ZT1M1 system sintered at $1100^{\circ}C$ due to Mn which known as improving the nonlinearity of ZnO varistors. The results of C-V characteristics such as barrier height (${\Phi}_b$), donor density ($N_D$), depletion layer (W), and interface state density ($N_t$) in ZT1M1 ceramics were $1.8{\times}10^{17}cm^{-3}$, 1.6 V, 93 nm, and $1.7{\times}10^{12}cm^{-2}$, respectively. Also we measured the resistance and capacitance of grain boundaries with temperature using impedance and electric modulus spectroscopy. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.47-54
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• 1996

Highly sensitive $WO_{3}$ doped with $SnO_{2}$ and Pt thick-film sensors for NOx gas were fabricated. The sensors had a maximum sensitivity at operating temperature of $250^{\circ}C$, but the optimum operation temperature, considering recovery desorption time, was at $330^{\circ}C$. These sensors improved sensitivity, response and recovery time, selectivity and stability, as compared to $WO_{3}$ sensors. The good linearity of sensitivity as a function of the gas concentration exhibited the possibility to be used for concentration meter.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• Nuclear Engineering and Technology
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• v.54 no.10
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• pp.3841-3848
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• 2022

The effect of modifiers on the optical features and radiation defying ability of the Eu³⁺ ions doped multi constituent glasses was examined. XRD has established the amorphous nature of the specimen. The presence of various functional/fundamental groups in the present glasses was analyzed through FTIR spectra. The physical, structural and elastic traits of the glasses were explored. The variation in the structural compactness of the glass structure according to the incorporated modifier was enlightened to describe their suitability for a better shielding media. For the examined glasses, the metallization criterion value varied in the range 0.613-0.692, indicating the non-metallic character of the glasses with possible nonlinear optical applications. The computed elastic moduli expose the Li-containing glass (BTLi:Eu) to be tightly packed and rigid, which is a requirement for a better shielding channel. Furthermore, the optical bandgap and the Urbach energy values are calculated based on the optical absorption spectra. The evaluated bonding parameters revealed the nature of the fabricated glasses covalent. In addition, we investigated the radiation attenuation attributes of the prepared Eu³⁺ ions doped multi constituent glasses using Phy-X software. We determined the linear attenuation coefficient (LAC) and reported the influence of the five oxides Li₂O₃, CaO, BaO, SrO, and ZnO on the LAC values. The LAC varied between 0.433 and 0.549 cm^-1 at 0.284 MeV. The 39B₂O₃-25TeO₂-15Li₂O₃-10Na₂O-10K₂O-1Eu₂O₃ glass has a much smaller LAC than the other glasses.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.143-150
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• 1997

The electrical properties of polysilicon thin films implanted with $B_2H_6$ diluted in $H_2$ as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were $B_2H_x\;^+$(x＝1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.1-8
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• 2017

Two different fluorine-doped tin oxide (FTO)-coated glass substrates were investigated to find better suitability for CdTe solar cells. Substrate A consisted of FTO (300 nm)/$SiO_2$ (24 nm)/intrinsic $SnO_2$ (30 nm)/borosilicate glass (2.2 mm), and substrate B consisted of FTO (700 nm)/intrinsic $SnO_2$ (30nm)/borosilicate glass (1.8 mm). The overall thickness of the FTO/glass substrates was about 2.5 mm. The total light transmittance of substrate B was much higher than that of substrate A throughout the whole spectral region, even though the thickness of the FTO in substrate B was twice larger than that of the FTO in the substrate A. The short-circuit current greatly increased in substrate B and the external quantum efficiency (EQE) increased over the whole wavelength range. This study shows that the diffuse optical transmittance played a key role in the large EQE value in the blue wavelength region, and the direct transmittance played a key role in the large EQE value in the red wavelength region. The higher transmittance is due to the rough surface generated by the thicker FTO on glass. The conversion efficiency of the CdTe solar cell increased from 12.4 to 15.1% in combination of rough FTO substrate and Cu solution back contact.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1170-1176
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• 2003

We developed an evolutionary optimization process involving a genetic algorithm and combinatorial chemistry (combi-chem), which was tailored exclusively for tile development of LED phosphors with a high luminescent efficiency, when excited by soft ultra violet irradiation. The ultimate goal of our study was to develop oxide red phosphors, which are suitable for three-band white Light Emitting Diodes (LED). To accomplish this, a computational evolutionary optimization process was adopted to screen a Eu$^{3+}$-doped alkali earth borosilicate system. The genetic algorithm is a well-known, very efficient heuristic optimization method and combi-chem is also a powerful tool for use in an actual experimental optimization process. Therefore the combination of a genetic algorithm and combi-chem would enhance the searching efficiency when applied to phosphor screening. Vertical simulations and an actual synthesis were carried out and promising red phosphors for three-band white LED applications, such as Eu$_{0.14}$Mg$_{0.18}$Ca$_{0.07}$Ba$_{0.12}$B$_{0.17}$Si$_{0.32}$O$_{\delta}$, were obtained.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.238-243
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• 2013

We investigated the effect of Pb-metal filler added to a hybrid paste(PbO-$Bi_2O_3-B_2O_3$-ZnO glass frit and Pb-powder), for joining flip-chip sat lower temperatures than normal. The glass transition temperature was detected at $250^{\circ}C$ and the softening point occurred at $330^{\circ}C$. As the temperature increased, the specific density decreased due to the volatility of the Pb-metal and boron component in the glass. When the glass was heat-treated at $350^{\circ}C$ for 5 min, XRD results revealed a crystalline $Pb_4Bi_3B_7O_{19}$ phase that had been initiated by the addition of Pb-filler in the hybrid paste. The addition of the Pb-metal filler caused are action between the Pb-metal and glass that accelerated the formation of the liquid phase. The liquid phase that formed, promoted bonding between the flip-chip substrate sat lower temperature.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1757-1763
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• 2014

Optical wavelength division multiplexing signals of eight non-return-to-zero 10 Gb/s channels were transmitted on the long-haul link up to 720 km. The link span was composed of 80 km single mode fiber, dispersion compensation fiber for complete compensation, and EDFAs. A circulating loop method was applied to the link experiment and the loop was optimized for the transmission link. Wavelength-dependent gain variation of EDFA was compensated using EDFAs of opposite gain slopes without expensive gain flattening filters. Average OSNR was aggravated to 22 dB and the worst OSNR channel variation was 9.7 dB after the transmission. It was confirmed by analyzing optical spectra that this OSNR variation was mainly caused by the hole burning effect of EDFA.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1087-1090
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• 2004

Samples of yttrium oxide doped with trivalent europium have been prepared by ceramic techniques, under different synthesis conditions; barium chloride ($BaCl_2$) and sodium tetraborate ($Na_2B_4O_7$) were tested as flux. The improvement of luminescence properties in dependence on substitution of $Eu^{3+}$ for $Y^{3+}$ in the host lattice, under electron and UV excitations is demonstrated The obtained results are discussed with respect to the employed processing method.