• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.2
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• pp.78-83
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• 2012

The structural change and the electrical conductivity with Sr content in $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_3$ (LSMCu) were studied. $La_{0.8}Sr_{0.2}MnO_3$ (LSM) and $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_3$ ($0.1{\leq}x{\leq}0.4$) were synthesized by EDTA citric complexing process (ECCP). A decrease in the lattice parameters and lattice volumes was observed with increase of Sr content, and these results were attributed to the increasing $Mn^{4+}$ ions and $Cu^{3+}$ ions in B-site. The electrical conductivity measured from $500^{\circ}C$ to $1000^{\circ}C$ was increased with increase of Sr content in the $0.1{\leq}x{\leq}0.3$ composition range, and it was 172.6 S/cm (at $750^{\circ}C$) and 177.7 S/cm (at $950^{\circ}C$, the maximum value) in x = 0.3. The electrical conductivity was decreased in x = 0.4 because of the presence of the second phase in the grain boundaries. The lattice volume was contracted by increase of $Mn^{4+}$ ions and $Cu^{3+}$ ions in B-site according to increase of Sr content and the electrical conductivity was increased with increase of charge carriers which were involved in the hopping mechanism.

• ETRI Journal
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• v.16 no.4
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• pp.1-11
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• 1995

A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.485-488
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• 2004

As scaling down the cell channel length, the increment of B concentration in channel region is inevitable to overcome the punch-through, especially in flash memory cell with 90nm technology. This paper shows that the high dose ion implantation in channel cause the Si defect. which has been proved to be the major cause of the tailed Vth in distribution. And also mechanical stress due to SiN-anneal process can induce the Si dislocation. and get worse it. With decreasing the channel implantation dose, skipping the anneal and reducing the mechanical stress, Si defect problem is solved completely. We are verify first that the optimization of B concentration in channel must be certainly considered in order to improve Si defect. It is also certainly necessary to stabilize the distribution of cell Vth in the next generation of flash memory.

• Journal of Photoscience
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• v.10 no.2
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• pp.203-208
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• 2003

Two coupled molecules were successfully synthesized by condensation of amine-donor-substituted barbituric acid derivativies as nonlinear optical chromophores. A flexible spacer of the alkyl chain with different lengths of carbon chains (5 and 6 carbons) was introduced between two chromophores, which prevented crystallization and aggregation of molecules. Two coupled molecules (B-Cn-B, n=5, 6) had glass-transition temperatures on a second heating around 81 and 76$^{\circ}C$ without melting points, respectively. To explore the linear optical properties, thin-films were prepared and examined by a photometry method using Nd:YVO$_4$ CW laser. Also, microscopic and macroscopic nonlinear optical properties were measured by Hyper-Rayleigh Scattering (HRS) and the Maker Fringes method using Nd:YAG ps pulse laser, respectively. In spite of the moderate hyperpolarizabilities of coupled molecules, the second order NLO coefficient (d$\_$33/) was larger than the conventional Disperse Red 1 doped PMMA polymeric system.

• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.657-662
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• 2014

We demonstrate a simulation of a parallel hybrid fiber amplifier in the C+L-band with a gain controlling technique. A variable optical coupler is used to control the input signal power for both EDFA and RFA branches. The gain spectra of the C+L-band are flattened by optimizing the coupling ratio of the input signal power. In order to enhance the pump conversion efficiency, the EDFA branch was pumped by the residual Raman pump power. A gain bandwidth of 60 nm from 1530 nm to 1590 nm is obtained with large input signal power less than -5 dBm. The gain variation is about 1.06 dB at a small input signal power of -30 dBm, and it is reduced to 0.77 dB at the large input signal power of -5 dBm. The experimental results show close agreement with the simulation results.

• Journal of the Korean Ceramic Society
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• v.28 no.9
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• pp.689-695
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• 1991

Dielectric properties of Ba1-$\chi$Sr$\chi$Ti1-yCayO3-y ceramics, where Sr and Ca were doped to Ba-site and Ti-site within the range of 0 x 0.24 and 0 y 0.05, respectively, were investigated. The substitution of Ca for Ti, which maintained the high resistivity of these formulations after sintering in a reducing atmosphere, was confirmed. Ca addition decreased the tetragonality c/a, increased the unit cell volume, and lowered Curie temperature, which were attributed to the occupancy of Ca2+ ions on Ti-sites. The lowering of Curie temperature by Ca addition was affected by the substitution of Sr for Ba-site; within 2 mol% of Ca, Curie temperature was lowered at a rate of 2$0^{\circ}C$ and 16$^{\circ}C$ per mol% of Ca at x=0 and x=0.08, respectively. Whereas the resistivity of the formulations without Ca was reduced to 107 {{{{ OMEGA }}cm, when sintered at low oxygen partial pressure of 10-9 MPa, the resistivity value higher than 1011 {{{{ OMEGA }}cm was maintained for the formulations containing Ca more than 0.5 mol%. Dielectric loss factor, tan$\delta$, was about 1% for most formulations.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.

• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.935-941
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• 1991

Effects of calcination process and ZrO2 addition on the electrical properties of [(Ba0.82Sr0.08Ca0.1)O]m(Ti1-$\chi$Zr$\chi$)O2 ceramics have been investigated. With the variation of A/B-site ratio m of the dielectric formulations, sintering behavior and the resistivity after sintering in a reducing atmosphere have been affected by the calcination process. When the dielectric formulations of m=1.01 were sintered in a reducing atmosphere, the room-temperature resitivity of 109 {{{{ OMEGA }}.cm was obtained for samples processed with two-step calcination, which was much lower than 1012 {{{{ OMEGA }}.cm of samples calcined once. It was confirmed that high resistivity of Ca-doped BaTiO3 ceramics, after sintering in a reducing atmosphere, is maintained by acceptor-like behavior of CaTi" which is formed by Ca substitution to Ti-site. It was also found out that the critical amount of B-site Ca substitution for reduction inhibition of BaTiO3 is around 0.005 mol. With the increasing amount of ZrO2 addition to dielectric formulations, Curie peak was depressed and Curie temperature was lowered due to the enhanced diffuse phase transition.tion.

• Journal of Powder Materials
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• v.17 no.5
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• pp.399-403
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• 2010

The effects of $MnO_2$ doping on the crystal structure, ferroelectric, and piezoelectric properties of (K,Na)$NbO_3$ (KNN) ceramics have been investigated. $MnO_2$ was found to be effective in enhancing the densification and grain growth during sintering. X-ray diffraction analysis indicated that Mn ions substituted B-site Nb ions up to 2 mol%, however, further doping induced unwanted secondary phases. In comparison with undoped KNN ceramics, the well developed microstructure and the substitution to B-sites in 2 mol% Mn-doped KNN ceramics resulted in significant improvements in both piezoelectric coupling coefficient and electromechanical quality factor.

• Transactions of Materials Processing
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• v.15 no.3 s.84
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• pp.213-219
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• 2006

To improve the strength of glass is being studied in order to contribute to weight saving of flat panel displays. Generally, the strength achieved of glass-ceramics is higher as is the fracture toughness by the formation of a heterogeneous phase inside glass. In this study, Ag-doped $45SiO_2-24CaO-24Na_2O-4P_2O_5\;and\;70SiO_2-10CaO-24Na_2O-10TiO_2$ glasses were irradiated to strengthen by crystallization using femto-second laser pulse. XRD, Nano-indenter and SEM etc., irradiation of laser pulse without heat-treated samples was analyzed. Samples irradiated by laser had higher value($4.4{\sim}4.56^*10-3Pa$) of elastic modulus which related with strength of glass than values heat-treated samples and these are $1.2{\sim}1.5$ times higher values than them of mother glass. This process can be applicable to the strengthening of thinner glass plate, and it has an advantage over traditional heat-treatment and ion-exchange method.