• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.104-111
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• 2001

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4, CH_4,\;and\; B_2H_6$. Physical and chemical properties of a-SiC:H films grown with varing the ratio of $B_2H_6/(SiH_4+CH_4)$ were characterized with various analysis methods including scanning electron microscopy (SEM), X-ray diffractometry (XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, secondary ion mass spectroscopy (SIMS), UV absorption CH_4spectroscopy and electrical conductivity measurements. With the B-doping concentration, the doping efficiency and the micro-crystallinity were decreased and the film became amorphous when $B_2H_6/(SiH_4{plus}CH_4)$ was over $5{\times}10^{-3}$. The addition of $B_2H_6$ gas during deposition decreased the H content in the film by lowering the quantity of Si-C-H bonds. Consequently, the optical band gap and the activation energy of a-SiC:H films were decreased with increasing the B-doping level.

• Progress in Superconductivity and Cryogenics
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• v.9 no.2
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• pp.15-18
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• 2007

The sub micron sized spherical $MgB_2$ powders were synthesized by spray reaction method. $MgB_2$ tapes with Al addition were fabricated by Powder in Tube (PIT) method. The superconducting property and microstructure of Al doped $MgB_2$ tapes were characterized by X-ray diffraction, optical microscopy and transport measurement under magnetic field. The $J_c$ value of $MgB_2$ tapes was increased with 10 vol. % Al addition. The $J_c$ value of 5,500 A/$cm^2$ and 11,000 A/$cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape without heat treatment, respectively. The $J_c$ value of 8,000 A/$cm^2$ and 33,000 A/$cm^2$ at 4.2 K and 5 T were obtained for the $MgB_2$ tape and 10 vol. % of Al added $MgB_2$ tape with heat treatment, respectively. The $J_c$-B curves show enhancement in $J_c$ (B), which suggests that the microstructure and transport properties of $MgB_2$ tapes have been improved with Al addition.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.709-714
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• 2004

The additive of low temperature sintering in Mn-doped PMN-PZT known as high piezoelectric materials was studied in this experiment. B$_2$O$_3$ was used for the additive of low temperature sintering. The effects of sintering temperature in dielectric, and piezoelectric properties were investigated with the amounts of B$_2$O$_3$. Sintered density was increased in comparison with no addition and under 2wt％ B$_2$O$_3$ and lower sintering temperature than 100$0^{\circ}C$. Therefore, in the low sintering temperature, the densification was improved by the addition of the B$_2$O$_3$. However, the sintering density was lower than that of the main composition in the case of the sintered at over 10$50^{\circ}C$. Dielectric constant with the addition of B$_2$O$_3$ was evaluated. The dielectric constant was 1000 2 wt％ of B$_2$O$_3$ and sintered at 100$0^{\circ}C$. Under 2wt％ of B$_2$O$_3$, the electromechanical coupling factor and the piezoelectric constant were not so much decreased. The electromechanical coupling factor and the piezoelectric constant were 50％ and 300(${\times}$10$^{-12}$ C/N) respectively. The mechanical quality factor was increased with B$_2$O$_3$. The mechanical quality factor was 1700 at 0.5wt％ B$_2$O$_3$ and sintered at 110$0^{\circ}C$. Dielectric loss was less than 0.5％ regardless of the amount of B$_2$O$_3$.

• Progress in Superconductivity
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• v.9 no.1
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• pp.80-84
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• 2007

Charcoal was used as a carbon source for improving the critical current density of $MgB_2$ and the effect of annealing temperature on the $J_c$ of $MgB_2$ was investigated. The charcoal powder used in this study was $1{\sim}2$ microns in size and was prepared by wet attrition milling. $MgB_2$ bulk samples with a nominal composition of $Mg(B_{0.95}C_{0.05})_2$ were prepared by in situ process of Mg and B powders. The powder mixture was uniaxially compacted into pellets and heat treated at temperatures of $650^{\circ}C\;-\;1000^{\circ}C$ for 30 minutes in flowing Ar gas. It was found that superconducting transition temperature of $Mg(B_{0.95}C_{0.05})_2$ decreased by charcoal additions which indicates the carbon substitution for boron site. $J_c$ of $Mg(B_{0.95}C_{0.05})_2$ was lower than that of the undoped $MgB_2$ at the magnetic fields smaller than 4 Tesla, while it was higher than that of the undoped sample especially at the magnetic field higher than 4 T. High temperature annealing seems to be effective in increasing $J_c$ due to the enhanced carbon diffusion into boron sites.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.22-26
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• 2008

Red long persistent phosphors of $CaZrO_3$ : Pr was synthesized by a solid reaction method. $CaCO_3\;and\;ZrO_2$ were used as hosting materials and Pr was doped as luminescence center element, and $B_2O_3$ was used as flux. The XRD pattern confirmed crystalline phase of the phosphor, and photoluminescence investigation showed emission spectrum at $480{\sim}570nm\;and\;590{\sim}700nm$. Phosphor samples were synthesized with $B_2O_3$ flux concentration of 1, 5, 10%, and luminescent peak of maximum intensity at 494 nm was obtained for 1% $B_2O_3$. Luminescent peak of red color at 620 nm was of highest intensity for 10% $B_2O_3$.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.178-182
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• 2011

The Rutile - type brown pigments doped with chromium were synthesized. Samples of $Ti_{1-x}Cr_xO_2$ ($0.02{\leq}X{\leq}0.08$) were synthesized by the solid state method. Solid solution limit of Cr contents to the rutile structure and its coloration were studied. Optimum composition was investigated accordingly. The characteristics of synthesized pigments were analyzed by XRD, SEM, Raman spectroscopy and UV. As a result, single phase of Rutile was observed from $1000^{\circ}C$ by XRD. The maximum limit of solid solution was 0.06 mole $Cr_2O_3$. The glazed sample showed brown color, and the value of CIE $L^*a^*b^*$ was $L^*$ 33.27, $a^*$ 10.64, $b^*$ 20.84.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.494-497
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• 2002

The influence of isomeric state of doped azo dye on the $B_7$ phase of bent-shaped liquid crystal (LC) is studied. It was found that modulating the isomeric trans-cis state of azo dye can change the molecular arrangement of the bent-shaped LCs. To identify these phenomena the observations of microscopic texture, electro-optic response, second harmonic wave generation (SHG) and switching current were carried out..

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.40-40
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.592-592
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• 2013

We synthesized BiOI nanostructures with various doped-concentrations of Ag (0.1, 1.0, 5.0, 10.0 mol%) and Ti (1.0, 5.0, 10.0, 30.0, 50.0 mol%). They show spherical echinoid-like structures examined by scanning electron microscope. The BET surface areas were measured to be in the range of 40~70 $m^2$/g, which is reduced by doping. The indirect band gap was estimated to be 1.8 eV for undoped BiOI with no change and 1.0 eV increase upon Ag and Ti doping, respectively. The structures were further examined by X-Ray diffraction analysis, FT-IR, and photoluminescence. We also demonstrated adsorption and photocatalytic degradation performances for methyl orange and Rhodamine B on the echinoid-like BiOI structures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.1-4
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• 2008

The growth of composite-structured Nd:$GdVO_4$ single crystal rods by the double die EFG method is reported. Two crucibles are combined with an outer and inner die for ascending of different melt. The composite-structured Nd:$GdVO_4$ single crystal rods with a length of 50 mm and an outer diameter of 5 mm including of inner Nd-doped core region with diameter 3 mm were grown successfully. Nd distribution in the, radial direction has graded profile from result of EPMA. Absorption coefficient in the core region at 808 nm was $42cm^{-1}$. Finally, we demonstrated the laser oscillation using our composite crystal and 2-W output was obtained.