• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.168-171
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• 1988

The p-n homo junction diode of the III-V ternary alloy semiconductor $In_{1-x}Ga_xP$ : S grown by the temperature gradient solution (TGS) was fabricated by Zn-diffusion, and it's characteristics was investigated. The carrier concentration of $In_{1-x}Ga_xP$ doped with sulfur, 0.5 mol %, was $1{\times}10^{17}cm^{-3}$ and the mobility was varied with the composition. In the case that the diffusion time was constant as 30 minutes. The temperature dependence of diffusion coefficient was decreased from D= $4.2{\times}10^{-5}$ exp (-1.74/$k_{B}T$) to D= $2.5{\times}10^{-5}$ exp (-3.272/$k_{B}T$) with increasing of composition $\times$ from 0.43 to 0.98. The major peak of E.L spectrum was due to D-A pair recombination and the peak intensity was increased with the increasing of input current. And the E.L intensity was decreased with the increasing temperature, and shift to the long wavelength. The luminescence efficiencies measured at $5^{\circ}C$, atmosphere temperature, was decreased from $2.6{\times}10^{-4}$% to $9.49{\times}10^{-6}$ % with increasing of composition it from 0.39, direct transition region, to 0.98, indirect transition region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.88-88
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• 2008

In this study, effect of thickness on structural, electrical and optical properties of B doped ZnO:Ga (GZOB) films was investigated. GZOB films were deposited on glass substrates by DC magnetron sputtering. The thickness range of films were from 100 nm to 600 nm to identified as increasing thickness, stress between substrate and GZOB film. The average transmittance of the films was over 80 % until 500 nm. Then a resistivity of $9.16\times10^{-4}\Omega$-cm was obtained. We presented that a GZOB film of 400 nm was optimization to obtain a high transmittance and conductivity.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.28-32
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• 2008

Hydrogenated microcrystalline silicon(${\mu}c$-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition(ICP-CVD) method, electrical and optical properties of these films were studied as a function of silane concentration. And then, effect of $PH_3\;and\;B_2H_6$ addition on their electrical properties was also investigated for solar cell application. Characterization of these films from X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. At $PH_3/SiH_4$ gas ratio of $0.9{\times}10^{-3}$, dark conductivity has a maximum value of ${\sim}18.5S/cm$ and optical bandgap also a maximum value of ${\sim}2.39eV$. Boron-doped ${\mu}c$-Si:H films, satisfied with p-layer of solar cell, could be obtained at ${\sim}10^{-2}\;of\;B_2H_6/SiH_4$.

• Korean Journal of Optics and Photonics
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• v.11 no.3
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• pp.202-205
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• 2000

One step thermal potassium ion exchange process was carried out to form optical channel waveguides in an ErNb co-doped phosphate glass. Flowing oxygen gas into KN03 melt during ion exchange was effective to prevent glass surface damage that causes an increase of waveguide propagation loss. Amplification characteristics of the waveguides were evaluated at $1.5{\mu}m$ signal wavelength with 980 om laser diode pump. A 45 mm long waveguide whose processing parameters had been optimized exhibited a small signal net gain of 7.5 dB at the launched pump power of 160 mW.160 mW.

• Journal of Radiation Protection and Research
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• v.30 no.2
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• pp.77-84
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• 2005

The authors submit the data concerning the methods of obtaining semiconductor scintillators on the basis of the zinc chalcogenide crystal doped with impurities (Te, Cd, O, $Me^{III}-metals$ Al, In, etc.). Characteristics of such crystals and mechanisms for the semiconductor scintillator luminescence are described as well. The scintillator luminescence spectra maximums are located within the range 450-640nm, which depends on the method of preparing the scintillator. The luminescence decay time ranges within $0.5-10{\mu}s\;and\;30-150{\mu}s$. The afterglow level is less than 0.01% after $10-20{\mu}s$, and the radiation stability is ${\geq}5{\cdot}10^8$ rad. Thermostability of the output characteristics of new semiconductor scintillators on the basis of zinc selenide is prescribed by thermodynamic stability of the principal associative radiative recombination centers that come into existence due to the crystal lattice inherent imperfections. Certain application fields of the new scintillators are examined taking into account their particular qualities.

• Journal of Magnetics
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• v.16 no.2
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• pp.108-113
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• 2011

The electron spin resonance lineshape (ESRLS) function for the electron spin resonance linewidth (ESRLW) of $Cr^{3+}$ (S = 3/2) in ferroelectric lithium niobate single crystals doped with 0.05 wt% of Cr, is obtained by using the projection operator technique (POT), developed by Argyres and Sigel. The ESRLS function is calculated to be axially symmetric about the c - axis and analyzed by using the spin Hamiltonian $H_{SP}={\mu}_B(B{\cdot}{^\leftrightarrow_{g}}{\cdot}S)+S{\cdot}{^\leftrightarrow_{D}}{\cdot}S$ with the parameters g = 1.972 and D = $0.395\;cm^{-1}$. In the ca plane, the linewidths show a strong angular dependence, whereas in the ab plane, they are independent of the angle. This result implies that the resonance center has an axial symmetry along the c - axis. Further, from the temperature dependence of the linewidths that is shown, it can be seen that the linewidths increase as the temperature increases, at a frequency of v = 9.27GHz. This result implies that the scattering effect increases with increasing temperature. Thus, the POT is considered to be more convenient to explain the scattering mechanism as in the case of other optical resonant systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.138-138
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• 2008

In this study, effect of thickness on structural, electrical and optical properties of B doped ZnO:Al (AZOB) films was investigated. AZOB films were deposited on PC substrates by DC magnetron sputtering. The thickness range of films were from 300 nm to 800 nm to identified as increasing thickness, stress between substrate and AZOB film. The. average transmittance of the films was over 80 % until 500 nm. Then a resistivity of $1.58\times10^{-3}\Omega$-cm was obtained. We presented that a AZOB film of 500 nm was optimization to obtain a high transmittance and conductivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.231-237
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• 2003

RE(Nd, Sm) elements doped (RE/Y)$_{1.8}$B $a_{2.4}$C $u_{3.4}$$O_{7-x}$ [(RE/Y)1.8] high $T_{c}$ superconductors were directionally grown by Top Seed Melt Growth(TSMG) process in air atmosphere. The (001)melt-textured N $d_{1.8}$B $a_{2.4}$C $u_{3.4}$ $O_{7-X}$(Nd1.8) seed crystals were used for achieving the c-axis alignment large grains perpendicular to surface of the samples. The (RE/Y)1.8 SEM micrographs of the melt-textured (RE/Y)1.8 samples revealed that the nonsuperconducting (RE/Y)211 inclusions are uniformly distributed in the superconducting (RE/Y)123 matrix except the region very close to the Nd seed crystal. The microstructure and superconducting properties were investigated by XRD, SEM, TEM and SQUID magnetometer. The Melt-textured (RE/Y)1.8 samples showed an onset $T_{c}$=91K and sharp superconducting transition. Also, the magnetization value of the (RE/Y)1.8 samples were compared with those of Y1.8 sample at 77 K. 77 K. 77 K. 77 K.K.

• Journal of Surface Science and Engineering
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• v.51 no.5
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• pp.332-336
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• 2018

Alkaline oxygen electrocatalysis, targeting anion exchange membrane alkaline-based metal-air batteries has become a subject of intensive investigation because of its advantages compared to its acidic counterparts in reaction kinetics and materials stability. However, significant breakthroughs in the design and synthesis of efficient oxygen reduction catalysts from earth-abundant elements instead of precious metals in alkaline media still remain in high demand. One of the most inexpensive alternatives is carbonaceous materials, which have attracted extensive attention either as catalyst supports or as metal-free cathode catalysts for oxygen reduction. Also, carbon composite materials have been recognized as the most promising because of their reasonable balance between catalytic activity, durability, and cost. In particular, heteroatom (e.g., N, B, S or P) doping on carbon materials can tune the electronic and geometric properties of carbon, providing more active sites and enhancing the interaction between carbon structure and active sites. Here, we focused on boron and nitrogen doped nanocarbon composit (BNC nanocarbon) catalysts synthesized by a solution plasma process using the simple precursor of pyridine and boric acid without further annealing process. Additionally, guidance for rational design and synthesis of alkaline ORR catalysts with improved activity is also presented.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.192-195
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• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.