• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.185-186
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• 2005

Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy $^{11}B^+$ ion implantation. Secondary defects were inspected nearby the projected range by high resolution transmission electron microscopy. Oxygen pileup was measured in the vicinity of the projected range by secondary ion mass spectrometry for heavily boron doped silicon wafers.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.1-4
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• 2010

First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of AlN doped with a Cu concentration of 6.25%-18.75%. The ferromagnetic state is more energetically favorable state than the antiferromagnetic state or the nonmagnetic state. For $Al_{0.9375}Cu_{0.0625}N$, a global magnetic moment of 1.26 mB per supercell, with a localized magnetic moment of 0.75 $m_B$ per Cu atom is found. The magnetic moment is reduced due to an increase in the number of Cu atoms occupying adjacent cation lattice position. For $Al_{0.8125}Cu_{0.1875}N$, the magnetism of the supercell disappears by the interaction of the neighboring Cu atoms. The nonmagnetic to ferromagnetic phase transition is found to occur at this Cu concentration. The range of concentrations that are spin-polarized should be restricted within very narrow.

• Progress in Superconductivity
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• v.11 no.2
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• pp.87-91
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• 2010

We fabricated the polyacrylic acid (PAA)-doped $MgB_2$ bulks and characterized their lattice parameters, actual C substitutions, microstructures, and critical properties. The boron (B) powder was mixed with PAA using N,N-dimethylformamide as solvent and then the solution was dried out at $200^{\circ}C$ and crushed. The C treated B powder and magnesium powder were mixed and compacted by uniaxial pressing at 500 MPa, followed by sintering at $900^{\circ}C$ for 1 h in high purity Ar atmosphere. We observed that the PAA doping increased the MgO amount but decreased the grain size, a-axis lattice constant, and critical temperature ($T_c$), which is indicative of the C substitution for B sites in $MgB_2$. In addition, the critical current density ($J_c$) at high magnetic field was significantly improved with increasing PAA addition: at 5 K and 6.6 T, the $J_c$ of 7 wt% PAA-doped sample was $6.39\;{\times}\;10^3\;A/cm^2$ which was approximately 6-fold higher than that of the pure sample ($1.04\;{\times}\;10^3\;A/cm^2$). This improvement was probably due to the C substitution and the refinement of grain size by PAA doping, suggesting that PAA is an effective dopant in improving $J_c$(B) performance of $MgB_2$.

• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.505-509
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• 2011

Visible light-activated photocatalysts (based on doped titania) are the subject of intensive current research due to the promise they offer in relation to solar powered systems for photocatalysis, hybrid systems for $CO_2$ conversion and hydrogen production from water. Current synthetic methodologies suffer from one or more serious shortcomings, which seriously hinder practical application. These include high cost, irreproducibility, difficulty in controlling the dopant level and unsuitability for scale up. In this review new reproducible and controllable methods (developed by Lambert group, Cambridge University) allowing the synthesis of practical quantities of efficient, visible light active anion (e.g. N, C and B) doped $TiO_2$ photocatalysts are summarized.

• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.342-350
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• 2010

An optimal wideband gain flattened hybrid erbium-doped fiber amplifier/fiber Raman amplifier (EDFA/FRA) has been introduced. A new and effective optimization method called particle swarm optimization (PSO) is employed to find the optimized parameters of the EDFA/FRA. Numerous parameters which are the parameters of the erbium-doped fiber amplifier (EDFA) and the fiber Raman amplifier (FRA) define the gain spectrum of a hybrid EDFA/FRA. Here, we optimize the length, $Er^{3+}$ concentration, and pump power and wavelength of the EDFA and also pump powers and wavelengths of the FRA to obtain the flattest operating gain spectrum. Hybrid EDFA/FRA with 6-pumped- and 10-pumped-FRAs have been studied. Gain spectrum variations are 1.392 and 1.043 dB for the 6-pumped- and 10-pumped-FRAs, respectively, in the 108.5 km hybrid EDFA/FRAs, with 1 mW of input signal powers. Dense wavelength division multiplexing (DWDM) system with 60 signal channels in the wavelength range of 1529.2-1627.1 nm, i.e. the wide bandwidth of 98 nm, is studied. In this work, we have added FRA's pump wavelengths to the optimization parameters to obtain better results in comparison with the results presented in our previous works.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.886-896
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• 1997

To investigate an effect of phase separation on precipitation characteristics of CuCl nanocrystals in CuCl doped nonlinear optical glasses, borosilicate glass systems with 9 different compositions with ~2wt% of CuCl were selected and CuCl doped glasses were prepared by melting and precipitation method. Microstructural properties of the CuCl doped glasses were analyzed by optical absorption spectroscopy, acid elution test, TEM, and EDXS. While phase separation did not occur in Glass A~D, interconnected and droplet microstructures due to phase separation were found in Glass E, F and Glass G~I, respectively. In the particular composition of the matrix glasses in this study, the precipitation of the CuCl particles was observed in the phase separable glasses, not in phase non-separable glasses. The CuCl particles were precipitated in both silica-rich phase region and boronrich phase region of the glass matrix. In the case of 7.7Na2O-36.6B2O3-52.7SiO2(mole%) glass, the larger CuCl particles than those in the silica-rich phase region were observed in the boron-rich phase region.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.43-47
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• 2014

NiO-doped hibonite pigments were synthesized by the solid state method to get stabilized blue color pigment in both oxidation and reduction atmospheres. Optimum substitution condition with NiO for hibonite blue pigment was investigated. Experimental results were comparable to those of previous cobalt-minimization studies performed with other phosphate- or oxide-based cobalt-containing ceramic pigments (having olivine ($Co_2SiO_4$), spinel ($CoAl_2O_4$), or with co-doped willemite ($(Co,Zn)_2SiO_4$) structures). Composition was designed varying the NiO molar ratio increasing with $SnO_2$. The optimum substitution content is 0.93 mole NiO with 0.75mole $SnO_2$. The characteristics of the synthesized pigment were analyzed by XRD, Raman spectroscopy, SEM, and UV-vis. Synthesized pigment was applied to a lime-barium glaze with 10 wt% each and fired at an oxidation atmosphere of $1250^{\circ}C/1h$ and a reducing atmosphere $1240^{\circ}C/1h$. Blue color was obtained with $L^*a^*b^*$ values at 43.39, -6.78, -18.20 under a reducing atmosphere and 41.66, -6.36, -14.7 under and oxidation atmosphere, respectively.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.552-556
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• 2008

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.414-414
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• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• Progress in Superconductivity and Cryogenics
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• v.20 no.4
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• pp.41-45
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• 2018

We have investigated the effect of $Y_2O_3$ nanoparticles on the pinning properties of $Y_2O_3$-doped $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films. Both undoped and $Y_2O_3$-doped GdBCO films were grown on $CeO_2$-buffered MgO (100) single crystal substrates by pulsed laser deposition (PLD) using KrF (${\lambda}=248nm$) laser. The $Y_2O_3$ doping contents were controlled up to ~ 2.5 area% by varying the internal angles of $Y_2O_3$ sectors put on the top surface of GdBCO target. Compared with the $Gd_2O_3$-doped GdBCO films previously reported by our group [1], the $Y_2O_3$-doped GdBCO films exhibited less severe critical temperature ($T_c$) drop and thus slightly enhanced critical current densities ($J_c$) and pinning force densities ($F_p$) at 65 K for the applied field parallel to the c-axis of the GdBCO matrix (B//c) with increasing the doping content. Below 40 K, the in-field $J_c$ and $F_p$ values of all $Y_2O_3$-doped GdBCO films exhibited higher than those of undoped GdBCO film, suggesting that $Y_2O_3$ inclusions might act as effective pinning centers.