• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.42-42
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• 2009

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.80-80
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 2004.05a
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• pp.69-69
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2002.04a
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• pp.126-127
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• 2002

No Abstract, See Full Text

• Proceedings of the Korean Magnestics Society Conference
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• 2002.04a
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• pp.26-27
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• 2002

No Abstract, See Full Text

• Carbon letters
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• v.9 no.2
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• pp.131-136
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• 2008

In order to investigate the effect of doping C, N, B and F elements on $TiO_2$ for reducing the band gap, the heat treatment of $TiO_2$ was carried out with tetraethylammonium tetrafluoroborate. Through XRD and XPS analysis, the C, N, B and F doped anatase $TiO_2$ was confirmed. According to the increase of temperature during treatment, the particle size was increased due to aggregation of $TiO_2$ with elements (B, C, N and F). To investigate the capacity of photocatalyst for degradation of dye under solar light, the degradation of acridine orange and methylene blue was conducted. The degradation of dyes was carried out successfully under solar light indicating the effect of doping elements (B, C, N and F) on $TiO_2$ for reducing the band gap effectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.24-25
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• 2006

In this study, Ni silicide on the SOI substrate doped B11 is proposed to improve thermal stability. The sheet resistance of Ni-silicide utilizing pure SOI substrate increased after the post-silicidation annealing at $600^{\circ}C$ for 30 min. However, using the proposed B11 implanted substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1010-1013
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• 2006

To understand the exact charge carrier photogeneration properties of photoactive thin films consisting of a ${\pi}-conjugated$ polymer matrix and a triplet dopant, we prepared two types of polymer, poly(9-vinylcarbazole) (PVK) and poly[9,9-bis(2- ethylhexyl)fluorene-2,7-diyl] (PF2/6) doped with triplet emitters for organic light-emitting diodes (OLED), either iridium(III)fac-tris(2-phenylpyridine) $(Ir(ppy)_3)$ or iridium(III)bis[(4,6-fluorophenyl)- $pyridinato-N,C^2'$]picolinate (FIrpic), as thin film devices by using the conventional method. Those doped film devices, as well as pristine film devices, on ITO substrates were characterized by means of steady state photocurrent measurement for a wide spectral range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.581-584
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• 2002

A new method for the preparation of lanthanide ions activated strontium aluminates phosphor by combustion method has been proposed. Combustion method consist of the redox reactions between the respective metal nitrates and urea in a preheated funace at $500^{\circ}C$. The luminescence behavior of the phosphor was studied and compared with corresponding phosphor prepared by conventional method. Effect of $Mg^{2+}$ ion concentration in strontium aluminate phosphor was investigated and the maximum luminescence of about $100cd/m^2$ was obtained. This method gave better brightness and small size to the phosphor than made by conventional method.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.527-531
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• 2006

In order to study the influence of post-annealing treatment on the frequency characteristics of the Li doped ZnO(Li:ZnO) FBAR(Film Bulk Acoustic Resonator) device, we investigated the material and electrical properties of Li:ZnO films in the annealing temperature range from 300 to $500^{\circ}C$. In our samples, as annealing temperature was increased, Li:ZnO films showed the improvement of high c-axis orientation and resistance value with relieved stress and low surface roughness. In addition to, the return loss in the frequency property of fabricated FBAR was improved by annealing treatment from 24.9 to 29.8dB. From experimental results, the optimum post-annealing temperature for FBAR is $500^{\circ}C$ and it can obtain excellent Li:ZnO FBAR performance with stronger c-axis orientation, smoother surface, relieved stress, and lower loss factor.