• Title/Summary/Keyword: Average Surface Roughness

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Epidermal Condition of Women By Health Promotion Behavior (성인여성의 건강증진 행위에 따른 안면 피부 상태)

  • Lee, Jeong-Ran;Hong, Hae-Sook
    • Journal of Korean Biological Nursing Science
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    • v.2 no.2
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    • pp.20-37
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    • 2000
  • The purpose of this study was to investigate the relationships between the differentials in life styles and their effect on the epidermal facial tissue in order to provide a basis for health professionals so that they might better be able to maintain and promote healthy skin care and further delay the premature ageing of the epidermal facial tissue. The subjects consisted of 145 females of various ages who visited skin care room in cerming health promoting behaviors(Park In sook's Profile) and questions on their behavioral practices pertaining to personal skin care were used. The investigation also ess of the four parts of the epidermal facial tissue studied. All data collected wee entered into the SAS program and analyzed for frequency, percentages, the utilized Pusan. The study dates ranged from May 1, 1998 to May 30, 1998. The methods used for this investigation were a questionnaire survey consisting of general objective questions. The questions con a "skin analyzer" to measured levels of moisturizing hydrated, facial oils, and roughnmean, t-test, ANOVA, and Pearson Correlation Coefficients. The results of this study were as follows ; 1. Epidermal facial oil was at its highest levels in the chin area with additional decreasing levels in the forehead and nose regions. The least regions were those of the cheeks. The highest levels of hydration on the other hand started with the forehead followed by the area of the chin, the cheeks and the lowest level of epidermal facial hydration was in the region of the nose. 2. The average score of the performance in the health promoting behaviors variable was 139.51. The variables with the highest degree of the performance were rest and sleeping(35.71). The lowest degree was hiegenic life(23.44). 3. The relationship health promoting behaviors and epidermal condition was not correlated with oil, hydration and roughness of the skin surface. 4. Skin care behavioral characteristics related to epidermal condition were washing style and temperature of washing water. 5. General characteristics related to epidermal condition were occupation, education level, acne and melasma. In conclusion, this study showed that several factors were significant in the behavior of skin care. Clear knowledge of both internal and external factors which affect the epidermal condition will help women to pursue active and appropriate practices in their health behaviors and skin care.

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Electrical and Optical Properties of the IZTO Thin Film Deposited on PET Substrates with SiO2 Buffer Layer (SiO2 버퍼층을 갖는 PET 기판위에 증착한 IZTO 박막의 전기적 및 광학적 특성)

  • Park, Jong-Chan;Joung, Yang-Hee;Kang, Seong-Jun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.3
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    • pp.578-584
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    • 2017
  • $SiO_2$ buffer layer (100 nm) has been deposited on PET substrate by electron beam evaporation. And then, IZTO (In-Zn-Sn-O) thin film has been deposited on $SiO_2$/PET substrate with different RF power of 30 to 60 W, working pressure, 1 to 7 mTorr, by RF magnetron sputtering. Structural, electrical and optical properties of IZTO thin film have been analyzed with various RF powers and working pressures. IZTO thin film deposited on the process condition of 50 W and 3 mTorr exhibited the best characteristics, where figure of merit was $4.53{\times}10^{-3}{\Omega}^{-1}$, resistivity, $4.42{\times}10^{-4}{\Omega}-cm$, sheet resistance, $27.63{\Omega}/sq.$, average transmittance (400-800 nm), 81.24%. As a result of AFM, all the IZTO thin film has no defects such as pinhole and crack, and RMS surface roughness was 1.147 nm. Due to these characteristics, IZTO thin film deposited on $SiO_2$/PET structure was found to be a very compatible material that can be applied to the next generation flexible display device.

A Quality Stability Estimation of Shock-absorber Tube for automatic drawer (자동서랍함용 완충기 튜브의 품질 안정성 예측)

  • Son, Jae-Hwan;Kim, Young-Suk;Han, Chang-Woo
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.7
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    • pp.2919-2924
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    • 2011
  • The automatic drawer is used to absorb the movement shock and adjust its velocity when it opens and closes. The tube in shock-absorber is the cylindrical case which surrounds its parts and is made of acetal. The purpose of this study is to determine the quality stability of the tube in the shock-absorber in injection molding process. The tube which had been manufactured in the process with 4 cavity cooling unit was used. In this study, the analysis and test are carried out to determine its quality stability. Which are the quality analysis with numerical simulation and performance tests of the tube compared with one of foreign make. It is calculated that the injection press is 87.6 MPa and the deflections in X, Y, Z directions are ranged in 0.07~1.00 mm. When the researched tube is compared with the foreign made tube, the maximum bending compressive load is 231 kgf higher, average axial compressive load is 0.05 kgf higher, and the roughness(Ra) on the inner surface is $0.02\;{\mu}m$. lower. In the result, it is known that the quality of researched tube in injection mold process is stable and its performance is superior.

Electrical and Optical Properties of ITO Thin Films with Various Thicknesses of SiO2 Buffer Layer for Capacitive Touch Screen Panel (정전용량식 터치스크린 패널을 위한 SiO2 버퍼층 두께에 따른 ITO 박막의 전기적 및 광학적 특성)

  • Yeun-Gun, Chung;Yang-Hee, Joung;Seong-Jun, Kang
    • The Journal of the Korea institute of electronic communication sciences
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    • v.17 no.6
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    • pp.1069-1074
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    • 2022
  • In this study, we prepared ITO thin films on the Nb2O5/SiO2 double buffer layer and investigated electrical and optical properties according to the change of SiO2 buffer layer thickness (40~50nm). The ITO thin film fabricated on the Nb2O5/SiO2 double buffer layer exhibited a broad surface roughness with a small value ranging of 0.815 to 1.181nm, and the sheet resistance was 99.3 to 134.0Ω/sq. It seems that there is no problem in applying the ITO thin film to a capacitive touch screen panel. In particular, the average transmittance in the short-wavelength (400~500nm) region and the chromaticity (b*) of the ITO thin film deposited on the Nb2O5(10nm)/SiO2(40nm) double buffer layer showed significantly improved results as 83.58% and 0.05, respectively, compared to 74.46% and 4.28 of ITO thin film without double buffer layer. As a result, it was confirmed that optical properties such as transmittance in the short-wavelength region and chromaticity were remarkably improved due to the index matching effect in the ITO thin film with the Nb2O5/SiO2 double buffer layer.

Growth Behavior of Heteroepitaxial β-Ga2O3 Thin Films According to the Sapphire Substrate Position in the Hot Zone of the Mist Chemical Vapor Deposition System (미스트화학기상증착 시스템의 Hot Zone 내 사파이어 기판 위치에 따른 β-Ga2O3 이종 박막 성장 거동 연구)

  • Kyoung-Ho Kim;Heesoo Lee;Yun-Ji Shin;Seong-Min Jeong;Si-Young Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.5
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    • pp.500-504
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    • 2023
  • In this study, the heteroepitaxial thin film growth of β-Ga2O3 was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga2O3 in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga2O3 thin films for various optical and electronic applications.

An in-vitro wear study of human enamel opposing heat-pressed ceramics (2종의 열가압 도재와 법랑질 간의 마모에 관한 연구)

  • Park, Chan-Yong;Jeon, Young-Chan;Jeong, Chang-Mo;Yun, Mi-Jung
    • The Journal of Korean Academy of Prosthodontics
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    • v.47 no.1
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    • pp.21-28
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    • 2009
  • Purpose: The purpose of this study was to compare the wear characteristics of human enamel opposing 2 heat-pressed ceramics (e.max Press and Empress Esthetic), conventional feldspathic porcelain (Ceramco 3) and type III gold alloy. Material and methods: Intact cusps of extracted premolars were used for enamel specimens. Five disk samples were made for each of two heat-pressed ceramics groups, conventional feldspathic porcelain group and type III gold alloy group. Wear tests were conducted in distilled water using a pin-on-disk tribometer. The amount of enamel wear was determined by weighing the enamel specimens before and after wear tests, and the weight was converted to volumes by average density. The wear tracks were analyzed by scanning electron microscopy and surface profilometer to elucidate the wear characteristics. Results: 1. Ceramco 3 led to the greatest amount of enamel wear followed by Empress Esthetic, e.max Press and type III gold alloy. However, there was no significant difference between Ceramco 3 and Empress Esthetic (P>.05), and there were also no significant differences among Empress Esthetic, e.max Press and type III gold alloy (P>.05). 2. The average surface roughness of e.max Press after wear test was smallest followed by Empress Esthetic and Ceramco 3, but there was no significant difference between Empress Esthetic and Ceramco 3 (P>.05). 3. There were no significant differences among the depth of wear tracks of all the groups (P>.05). The group that showed the largest width of wear track was Ceramco 3 followed by Empress Esthetic, e.max Press and type III gold alloy. However, there was no significant difference between e.max Press and Empress Esthetic (P>.05), and there was also no significant difference between Empress Esthetic and Ceramco 3 (P>.05). Conclusion: Within the limits of this study, heat-pressed ceramics were not more abrasive than conventional feldspathic porcelain.

Properties of Indium Tin Oxide Thin Films According to Oxygen Flow Rates by γ-FIB System (γ-FIB 시스템을 이용한 산소 유량 변화에 따른 산화인듐주석 박막의 특성 연구)

  • Kim, D.H.;Son, C.H.;Yun, M.S.;Lee, K.A.;Jo, T.H.;Seo, I.W.;Uhm, H.S.;Kim, I.T.;Choi, E.H.;Cho, G.S.;Kwon, G.C.
    • Journal of the Korean Vacuum Society
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    • v.21 no.6
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    • pp.333-341
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    • 2012
  • Indium Tin Oxide (ITO) thin films were prepared by RF magnetron sputtering with different flow rates of $O_2$ gas from 0 to 12 sccm. Electrical and optical properties of these films were characterized and analyzed. ITO deposited on soda lime glass and RF power was 2 kW, frequency was 13.56 MHz, and working pressure was $1.0{\times}10^{-3}$ Torr, Ar gas was fixed at 1,000 sccm. The transmittance was measured at 300~1,100 nm ranges by using Photovoltaic analysis system. Electrical properties were measured by Hall measurement system. ITO thin films surface were measured by Scanning electron microscope. Atomic force microscope surface roughness scan for ITO thin films. ITO thin films secondary electron emission coefficient(${\gamma}$) was measured by ${\gamma}$-Focused ion beam. The resistivity is about $2.4{\times}10^{-4}{\Omega}{\cdot}cm$ and the weighted average transmittance is about 84.93% at 3 sccm oxygen flow rate. Also, we investigated Work-function of ITO thin films by using Auger neutralization mechanism according to secondary electron emission coefficient(${\gamma}$) values. We confirmed secondary electron emission peak at 3 sccm oxygen flow rate.

Degumming of Silk by Calcium hydroxide (Calcium Hydroxide에 의한 Silk의 정련)

  • 정양숙;김정호;배도규
    • Journal of Sericultural and Entomological Science
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    • v.45 no.1
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    • pp.34-45
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    • 2003
  • Silk was treated with calcium hydroxide for degumming at different treatment times, temperatures and Ca(OH)$_2$ concentration to optimize degumming conditions in this thesis. After degumming, soluble and insoluble sericin were seperated and then the soluble sericin was characterized by measuring the average degree of polymerization (D.P.), lysinoalanine (LAL) content, DSC, and by amino acid analysis. And degummed silk fibroin was characterized by measuring tenacity and SEM. Degumming loss was increased by increasing the treatment time and temperature until about 30 minutes. After then, a slight difference was found along with treatment times at the Ca(OH)$_2$ concentrations of 0.07% and 0.1% solutions. After degumming, insoluble sericin ratio on degumming solution was increased by increasing treatment temperature at Ca(OH)$_2$ 0.04% solution. At the concentration Ca(OH)$_2$ of 0.07%, a soluble ratio was almost 100% regardless of treatment time and temperature. At the beginning of treatment, insoluble ratio was high at Ca(OH)$_2$ 0.1% solution but it was decreased by increasing treatment time. At the Ca(OH)$_2$ concentration of 0.04%, D.P. of soluble sericin was maintained as a constant value of 10 at 100$^{\circ}C$ although treatment time was increased. However, at 80$^{\circ}C$ and 90$^{\circ}C$, it was hard to prepare a soluble sericin having a constant D.P. by increasing treatment time. At the Ca(OH)$_2$ concentration of 0.07%, D.P. was almost 10 irrespective of treatment temperature and time. Soluble sericins with high D.P. of 20∼30 were obtained at 0.1% and 100$^{\circ}C$. LAL was not detected in soluble sericin. As the results of amino acid analysis, it showed that Ca(OH)$_2$ degumming reduced the contents of hydroxy amino acids like Ser., Thr. and Tyr. In DSC analysis of soluble sericin, endothermic peak by thermal deformation and pyrolysis showed at 189$^{\circ}C$ and at 299$^{\circ}C$, respectively. The tenacities of degummed silk were 15∼30% lower than that of raw silk. And it was decreased with increasing treatment time. From the morphological study, the thickness of degummed silk fibroin became thinner by increasing degumming loss. The roughness of a silk fibroin surface was appeared as treatment concentration was increased.

Suppression of misfit dislocations in heavily boron-doped silicon layers for micro-machining (마이크로 머시닝을 위한 고농도로 붕소가 도핑된 실리콘 층의 부정합 전위의 억제)

  • 이호준;김하수;한철희;김충기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.2
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    • pp.96-113
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    • 1996
  • It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

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