• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 1999년도 춘계종합학술대회
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• pp.330-334
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• 1999

This paper presents a new transient voltage blocking device (TBD) for commucation facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, the new TBD, which consists of a gas tube, avalanche diodes and junction type field effect transistors (JFETs), was designed and fabricated JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche diodes with low energy capacity are protected from the high current, and the TBD has a very small input capacitance. From the performance test using surge generator, which can produce 1.2/50${\mu}\textrm{s}$ 4.2 k$V_{max}$, 8/20${\mu}\textrm{s}$ 2.1 kA$\sub$max/, it is confirmed that the proposed TBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.206-209
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• 2002

With the progress of semiconductor processing technology, avalanohe photodiodes (APDs) based on InP/InGaAs are used for high-speed optical receiver modules. Planar-type APDs give higher reliability than mesa-type APDs. However, Planar-type APDs are struggled with a problem of intensed electric field at the junction curvature, which causes edge breakdown phenomena at the junction periphery. In this paper, we focused on studying the effects of junction curvature for APDs performances by different etching processes followed by single diffusion to from p-n junction. The performance of each process is characterized by observing electric field profiles and carrier generation rates. From the results, it can be understood to predict the optimum structure, which can minimize edge breakdown and improve the manufacturability.

• 한국광학회지
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• 제5권2호
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• pp.340-346
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• 1994

2.5Gbps 광통신시스템용 수광소자로서 charge plate층을 갖는 링구조의 separate absorption grading multiplication avalanche photodiode를 제작하고 그 특성을 조사 분석하였다. Avalanche Photodiode의 제작은 Metal-Organic Chemical Vapor Deposition 과 Liquid Phase Epitaxy법을 이용한 에피성장과 Br:Methanol을 이용한 채널식각 방법을 사용하였고, passivation과 평탄화는 photosensitive polyimide를 이용하였다. 제작된 ADP는 10nA 이하의 작은 누설전류를 나타내었고, -38~39 V의 항복전압을 나타내었다. 제작된 ADP를 GaAs FET hybrid 전치증폭기와 결합하여 2.5Gbps 속도에서 $2^{23}-1$의 길이를 갖는 입력 광신호에 대해 $ 10^{-10}$ Bit Error Rate에서 -31.0dBm의 수신감도를 얻었다.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.241-245
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• 2001

In this paper, we present parameter optimization technique for GaAs/AlGaAs multiple quantum well avalanche photodiodes used for image capture mechanism in high-definition system. Even under flawless environment in semiconductor manufacturing process, random variation in process parameters can bring the fluctuation to device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. This paper will first use experimental design and neural networks to model the nonlinear relationship between device process parameters and device performance parameters. The derived model was then put into genetic algorithms to acquire optimized device process parameters. From the optimized technique, we can predict device performance before high-volume manufacturign, and also increase production efficiency.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.971-973
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• 1999

채널길이에 따른 n-채널과 p-채널 poly-Si TFT's를 제작하고 그 전기적 특성을 분석하였다. n-채널과 p-채널소자는 공통적으로 기생바이폴라트 랜지스터현상(parasitic bipolar transistor action)에 의한 kink 효과, 전하공유(charge sharing)에 의한 문턱전압의 감소, 소오스와 드레인 근처의 결함에 의한 RSCE(reverse short channel effect) 효과, 수직전계에 의한 이동도의 감소, 그리고 avalanche 증식에 의한 S-swing의 감소가 나타났다. n-채널은 p-채널 보다 더 큰 kink, 이동도, S-swing의 변화가 나타났으며, 높은 드레인 전압에서의 문턱전압의 이동은 avalanche 증식(multiplication)에 의한 것이 더 우세한 것으로 나타났다. 누설전류의 경우, 채널 길이가 짧아짐에 따라 n-채널은 큰 증가를 나타냈으나 p-채널의 경우는 변화가 나타나지 않았다.

• Journal of the Optical Society of Korea
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• 제1권1호
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• pp.10-14
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• 1997

Single pulse laser excitation at 656 nm and successive pulse excitation at 635.2 and 648.4 nm produced blue emission at 480 nm by two-step upconversion process in Tm/sup 3+/:LaF/sub 3/. The excited-state absorption cross-section of the /sup 3/F/sub 4/ to /sup 1/G/sub 4/ transition was estimated by a looping mechanism with cross-relaxation processes. The dynamics of up-conversion andthe possibility of the photon avalanche by a pulse laser excitation were studied by numerical simulation with the rate equation model.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.164-165
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• 2001

애벌란치형 광검출기(Avalanche Photodiode; APD)는 내부 이득을 갖고 있어 수신감도가 좋고 고속 동작이 가능하여 광통신에 있어서 매우 중요한 소자이다. 초기에는 공정의 용이성 등으로 인해 Ge을 소재로 하는 APD가 많이 사용되었으나 1.55 $\mu\textrm{m}$ 파장에서 광흡수 특성이 좋지 않고 전자와 정공의 이온화 계수비가 거의 같아 GB Product이 낮으므로 점차 이들 특성이 우수한 InP/InGaAs APD가 사용되었다. InGaAs는 밴드갭은 Ge보다 크지만 직접천이형 밴드구조를 갖기 때문에 1.67 $\mu\textrm{m}$까지 광흡수 특성이 좋고 소수캐리어의 이동도가 높아 고속동작에 유리하다. (중략)

• Journal of Advanced Marine Engineering and Technology
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• 제23권2호
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• pp.159-167
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• 1999

This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.

• 대한전기학회논문지:전력기술부문A
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• 제48권11호
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• pp.1464-1471
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• 1999

This paper introduces complex-valued competitive learning neural network for spatio-temporal pattern recognition. There have been quite a few neural networks for spatio-temporal pattern recognition. Among them, recurrent neural network, TDNN, and avalanche model are acknowledged as standard neural network paradigms for spatio-temporal pattern recognition. Recurrent neural network has complicated learning rules and does not guarantee convergence to global minima. TDNN requires too many neurons, and can not be regarded to deal with spatio-temporal pattern basically. Grossberg's avalanche model is not able to distinguish long patterns, and has to be indicated which layer is to be used in learning. In order to remedy drawbacks of the above networks, unsupervised competitive learning using complex umber is proposed. Suggested neural network also features simultaneous recognition, time-shift invariant recognition, stable categorizing, and learning rate modulation. The network is evaluated by computer simulation with randomly generated patterns.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1847-1849
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• 2005

Unclamped Inductive Switching (UIS) 능력을 향상시키기 위하여 Floating p- well을 적용한 IGBT의 단락 회로 상태에서 과전압을 감지하는 새로운 보호회로를 제안하고 제작하였다. 실험 결과 제안된 회로는 fault 상황에서 fault 신호를 감지하고 즉시 게이트 전압을 낮추어 컬렉터 전류를 감소시켰다. 또한 Hard Switching Fault (HSF)와 Fault Under Load (FUL) 상황에서의 측정 및 2차원 Mixed-Mode 시뮬레이션을 통해 제안된 회로와 소자의 동작을 확인하였다.