• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.954-958
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• 2000

The characterization of zinc diffusion processes applied for high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The zinc diffusion profiles, such as the diffusion depth and the zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severly impacted on the process parameters, such as the amount of Zn$_3$P$_2$ source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.731-734
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• 2000

The characterization of Zinc diffusion processes applied fur high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The Zinc diffusion profiles, such as the diffusion depth and the Zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn$_3$P$_2$source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

• ETRI Journal
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• v.43 no.5
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• pp.916-922
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• 2021

We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.

• Proceedings of the Korea Institutes of Information Security and Cryptology Conference
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• 1997.11a
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• pp.196-202
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• 1997

[6]에서 Zhang과 Zheng은 부울함수의 암호학적인 전역상관계수의 특성을 계산하기 위해서 GAC(Global Avalanche Characteristic)이라는 새로운 개념을 제시하였다. 그들은 GAC의 값들에 대한 측적을 위해서 2개의 단위를 제시했고 2개의 단위의 상한과 하한에 대해서 계산했다. 그러나 그들은 균등함수의 GAC의 하한은 향후의 연구과제로 남겨놓았다. 본 논문에서는 균등함수의 GAC의 하한에 대해서 계산했고, 연접의 방법에 의한 좋은 GAC 의 특성을 가지는 함수의 생성방법을 제시하였다.

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.288-289
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• 2004

The performance of the InGaAs/InP avalanche photodidodes operated in Geiger-mode was investigated for 1550nm wavelengths at room temperature. We find the optimal operating points where the high quantum detection efficiency and low dark current are achieved. For the optical pulse detection, the gated-mode is used to reduce the dark current.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.160-161
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• 2001

APD(avalanche photo diode)는 수광된 빛에 의해 생성된 캐리어를 강한 역바이어스 전압(40 ～ 400V)으로 가속시켜 avalanche 증배를 일으켜 큰 current를 얻을 수 있도록 제작된 소자이다. APD는 P-N 포토 다이오드에 비하여 수십～수백배의 높은 반응도(responsivity)를 얻을 수 있으며 응답 시간이 매우 짧다는 장점이 있는 반면 불규칙한 전류에 의해 만들어지는 내부 잡음 레벨이 높으며 온도에 민감하다는 단점을 갖고 있다. (중략)

• Electronics and Telecommunications Trends
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• v.8 no.1
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• pp.92-110
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• 1993

광통신의 전송용량을 증가시키는 방법의 한가지로 전송속도의 증대에 관한 연구개발이 국내외에서 진행되어 왔다. 전송속도가 증가하여 Gb/s 급 이상이 되면 수신단 전치증폭기의 잡음이 급격히 증가하게 되어 수신감도가 떨어지게 되는데 이는 곧 중계기의 간격 감소로 인한 경제성의 저하를 의미한다. 이러한 수신단의 수신감도 저하를 극복하는 방법의 하나로 내부 이득을 갖는 APD(Avalanche Photodiode)를 수광소자로 사용하고자 하는 연구가 진행되어 왔다. 본 고에서는 InGaAs를 흡수층으로 하는 광통신용 APD의 구조, 동작특성 및 최근 연구동향을 소개하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.232.2-232.2
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• 2013

본 연구에서는 asymmetric과 symmetric MOSFET 소자의 drain breakdown 및 snapback 특성을 분석하였다. 실험에서는 두 MOSFET 소자의 동작 영역에서 게이트와 드레인에 각각 전압을 인가하였다. 드레인 전류-전압 곡선으로 부터 drain breakdown 전압과 snapback 전압을 추출하였다. 결과 avalanche breakdown 발생 전의 드레인 전류는 asymmetric 구조의 경우 더 작은 값을 보였으며 이는 asymmetric 구조에서의 drain field 가 더 낮기 때문이다. 따라서 impact ionization은 asymmetric 구조에서 덜 발생하며, snapback 전압은 avalanche breakdown voltage가 작은 asymmetric 구조에서 크게 나타났다.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.414-423
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• 2007

Field Emission Display(FED) has significant advantages over existing display technologies, particularly in the area of small and high quality display. In order to test the feasibility of fabricating the System-on-Chip(SOC) with FED, we conducted the experiment to use the p-n junction as an electron beam source for the flat panel display. A novel structure was constructed to form p-n junctions by generating inversion layer with the electric field from the cantilever style gate. When we applied more than 220V at the cantilever style gate which has a height of $1{\mu}m$, avalanche breakdown onset was successfully achieved. The characteristics was compared with the electron emission from the ultra shallow junction in the avalanche region. The experiment result and the future direction were discussed.

• The Journal of the Korea Contents Association
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• v.9 no.8
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• pp.91-98
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• 2009

This paper presents a solution to error avalanche of deciphering where radio noise brings random bit errors in encrypted image data under ubiquitous environment. The image capturing module is to be made comprising data compression and encryption features to reduce data traffic volume and to protect privacy. Block cipher algorithms may experience error avalanche: multiple pixel defects due to single bit error in an encrypted message. The new fault tolerant scheme addresses error avalanche effect exploiting a three-dimensional data shuffling process, which disperses error bits on many frames resulting in sparsely isolated errors. Averaging or majority voting with neighboring pixels can tolerate prominent pixel defects without increase in data volume due to error correction. This scheme has 33% lower data traffic load with respect to the conventional Hamming code based approach.