• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.94-100
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• 2017

Stress drain bias dependent current model is proposed for sub-70-nm p-channel metal-oxide semiconductor field-effect transistors (pMOSFETs) under drain-avalanche-hot-carrier (DAHC-) mechanism. The proposed model describes the both on-current and off-current degradation by using two device parameters: channel length variation (${\Delta}L_{ch}$) and threshold voltage shift (${\Delta}V_{th}$). Also, it is a simple and effective model of predicting reliable circuit operation and standby power consumption.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.5
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• pp.273-278
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• 2002

Even though the modulating signal frequency of the light is too high to detect directly, the signal can be extracted by frequency conversion at the same time as the detection by means of the non-linearity of the APD. An analysis is presented for super-high-speed optical demodulation by an APD with electronic mixing. A normalized gain is defined to evaluate the performance of the frequency conversion demodulation. The nonlinear effect of the internal capacitance was included in the small signal circuit analysis. We showed theoretically and experimentally that the normalized gain is dependent on the down converted difference frequency component. In the experiment, the down converted different frequency outputs became larger than the directly detected original signal for the applied local signal of 20㏈m.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.638-643
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• 2003

Channel width dependence of hot-carrier effect in nMOSFET with shallow trench isolation is analyzed. $I_{sub}$- $V_{G}$ and $\Delta$ $I_{ㅇ}$ measurement data show that MOSFETs with narrow channel-width are more susceptible to the hot-carrier degradation than MOSFETs with wide channel-width. By analysing $I_{sub}$/ $I_{D}$, linear $I_{D}$- $V_{G}$ characteristics, thicker oxide-thickness at the STI edge is identified as the reason for the channel-width dependent hot-carrier degradation. Using the charge-pumping method, $N_{it}$ generation due to the drain avalanche hot-carrier (DAHC) and channel hot-electron (CHE) stress are compared. are compared.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.30-36
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• 1997

AlGaAs/GaAs HBTs are developed well enough to be commercialized as an active device in optical transmission system, but there remains the unanswered questions about reliability. In this paper we applied the reverse constant current stress at the high voltage in avalanche region for a long time to find out a new degradation mechanism of junctrion I-V. The unction off-set voltage at which the current vanishes to zero was shifted to the negative direction of applied bias due to the increment of leakage current as the stress time increases. It was identified that the degradation was induced by the hot carriers which were generated at space charge region and trapped at the interface between GaAs base and the passivation nitride enhancing the electric field across the nesa edge.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.43-49
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• 1997

The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.

• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.3-3
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• 2007

• Journal of the Korean Society of Safety
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• v.12 no.1
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• pp.29-36
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• 1997

Precision electronic equipments for outdoor use are composed of sophisticated microcircuits that are extremely vulnerable to lightning-caused voltage spike. This transient voltage spike may cause upset, latent failure or Interference on electronic equipments. In order to develop efficient lightning protection measures on AC power lines of a road traffic controller as a electronic equipment for outdoor use, experimental surge immunity tests were conducted according to IEC standard 801-5. The combination of gas tube arrester and metal-oxide varistor was installed at the input of AC power lines and the silicon avalanche suppressor installed at the output of DC power supply for the lightning protection measures.

• Journal of applied mathematics & informatics
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• v.7 no.1
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• pp.269-278
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• 2000

A Boolean function generates a binary sequence which is frequently used in a stream cipher. There are number of critical concepts which a Boolean function, as a key stream generator in a stream cipher, satisfies. These are nonlinearity, correlation immunity, balancedness, SAC(strictly avalanche criterion), PC(propagation criterion) and so on. In this paper, we present the algorithms for generating random nonlinear combining functions satisfying given correlation immune order and nonlinearity. These constructions can be applied for designing the key stream generators. We use Microsoft Visual C++6.0 for our program.

• Journal of Mechanical Science and Technology
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• v.14 no.7
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• pp.744-751
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• 2000

To achieve lower flying height for high areal recording density, the laser zone texturing of the disk needs to be designed to reduce glide height. One problem of the laser bump design is that the regular laser bump pattern often produces glide resonance phenomenon, which leads to failure of the glide height test. However, it was found in this study that glide resonance is an intrinsic problem of the glide head used and resonance phenomenon depends on the type of the head slider, that is, the natural frequency of the slider body. Therefore, higher glide height or glide failure caused by glide resonance does not lead to head/media interface problem in the real drive operating conditions in which the data head is used. Pseudo-random bump pattern greatly reduces the glide resonance. Smaller bump pitch will also help to reduce the glide resonance. However, as bump spacing becomes smaller, glide height will be increased due to increased air pressure developed around the bumps. Lowering bump height is the most effect way to reduce glide avalanche.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.33-33
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• 2009