• Applied Microscopy
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• v.47 no.3
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• pp.208-213
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• 2017

The microstructural changes in Co nanoparticles and an Au-10at.%Pd thin film have been investigated using an in situ heating holder with a micro-electro-mechanical system (MEMS). In Co nanoparticles, two phases (face-centered cubic and hexagonal close-packed crystal structures) were found to coexist at room temperature and microstructures at temperatures, higher than $1,000^{\circ}C$, were observed with a quick response time and significant stability. The actual temperature of each specimen was directly estimated from the changes in the lattice spacing (Bragg-peak separation). For the Au-10at.%Pd thin film, at a set temperature of $680^{\circ}C$, the actual temperature of the sample was estimated to be $1,020^{\circ}C{\pm}123^{\circ}C$. Note that the specimen temperature should be carefully evaluated because of the undesired effects, i.e., the temperature non-uniformity due to the sample design of the MEMS chip, and distortion due to thermal expansion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.86-89
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al and Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Au; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Progress in Superconductivity
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• v.9 no.1
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• pp.119-125
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• 2007

We investigated recovery in $Au/YBa_2Cu_3O_7$ (YBCO) thin film meander lines on sapphire substrates. The meander lines were fabricated by patterning YBCO films coated with gold layers. The lines were subjected to simulated AC fault current and then small current was applied for recovery measurements. The samples were immersed in liquid nitrogen during the experiment. After the fault, the resistance decreased linearly, first slowly and then fast to zero. The initial slow decrease was due to the decrease of the meander line temperature, whereas the fast decrease was originated from the transition from the normal state to the superconducting state. The recovery speed depended on the size of samples, and was faster in the smaller samples during the whole period of recovery. The experimental results were analyzed quantitatively with the concept of heat transfer within the sample and to the surrounding liquid nitrogen. A heat balance equation was solved for the initial phase of recovery, and an expression for the time dependence of resistance was obtained. The result agreed with data well.

• Applied Chemistry for Engineering
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• v.23 no.3
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• pp.289-292
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• 2012

Au electrodes modified with self-assembled monolayers (SAMs) were used to control the work function of source/drain electrodes in triethylsilylethynyl anthradithiophene (TES ADT)-based organic thin film transistors (OTFTs). By using benzothiol (BT) and pentafluorobenzothiol (PFBT) SAMs, the hole injection barrier between Au and the highest occupied molecular orbital (HOMO) of TES ADT was controlled. After a solvent annealing, TES ADT OTFTs with PFBT SAM-treated Au electrodes were found to exhibit high field-effect mobilities of $0.05\;cm^2/Vs$ and on/off current ratios of $10^6$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1044-1048
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• 2007

With development of electronic products the demands for miniaturization and weight-lightening have increased until a recent date. Accordingly, The effort to substitute glass substrates was widely made. However, polymer substrates have weak point that substrates were damaged at high temperature. In this paper, we deposited transparent conductive film at low temperature. And we inserted Au thin film between oxide to compensate for deteriorated electrical characteristics. Ga-doped ZnO(GZO) multilayer coatings were deposited on glass substrate by DC sputtering. The optimization of deposition conditions of both AZO and Au layers were performed to obtain better electrical and optical characteristics in advance. We presumed that the properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibited the resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77 %. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.65-70
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• 2006

Characteristics of thin-film NTC thermal sensors fabricated by micromachining technology were studied as a function of the thickness of membrane. The overall-structure of thermal sensor has a form of Au/Ti/NTC/$SiO_{X}$/(100)Si. NTC film of $Mn_{1.5}CoNi_{0.5}O_{4}$ with 0.5 mm in thickness was deposited on $SiO_{X}$ layer (1.2 mm) by PLD (pulsed laser deposition) and annealed at 873-1073 K in air for 1 hour. Au(200 nm)/Ti(100 nm) electrode was coated on NTC film by dc sputtering. By the results of microstructure, X-ray and NTC analysis, post-annealed NTC films at 973 K for 1 hour showed the best characteristics as NTC thermal sensing film. In order to reduce the thermal mass and thermal time constant of sensor, the sensing element was built-up on a thin membrane with the thickness of 20-65 mm. Sensors with thin sensing membrane showed the good detecting characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.228.1-228.1
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• 2015

We demonstrate a simple route to hybridize two different nanomaterials by using three-dimensional nanodishes that can be used as small plasmonic containers to host guest nanoparticles. Our nanodishes were fabricated using nanoimprint lithography and oblique-angle film deposition, and the guest nanoparticles were drop-casted onto the host nanodishes. Based on the proposed method, colloidal Au nanoparticles were assembled inside Au nanodishes in the form of a labyrinth. These Au nanoparticle-nanodish hybrids excited a strong surface plasmon resonance, as verified by a numerical simulation of the local field enhancement and by direct observation of the enhanced Raman signals. Our results point to the potential of the nanodishes as a useful platform for combining diverse nanomaterials and their functionalities.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.695-698
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• 2006

The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.47-53
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• 1997

We fabricated gamma radiation detector using high resistive p-Cd$_{80}$Zn$_{20}$Te grown by high pressure bridgman method and forming au thin film electrode by chemically electroless deposition method. The device of Au/Cd$_{80}$Zn$_{20}$Te/Au is a typical MIM structure. The characteristic of current-voltage showed good linearity to 3kV/cm but it depend on the square of electric field over 3kV/cm. As the results of rutherford backscattering spectroscope(RBS) and auger spectroscope on the Au/Cd$_{80}$Zn$_{20}$Te, Au penetrated to the surface of Cd$_{80}$Zn$_{20}$Te detector absorbed slightly high energy radiation like a few hundred keV and showed good performance to detect low energy gamma ray.mma ray.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.