• Title/Summary/Keyword: Au-ZnO

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A Study on the Au Recoverability from Mongolian Tailings (몽골 광미로부터 Au 회수 가능성에 관한 연구)

  • Ko, Chin-Surk;Burentogtokh, Togtokhmaa;Lee, Jong-Ju;Park, Cheon-Young
    • Korean Journal of Mineralogy and Petrology
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    • v.33 no.1
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    • pp.41-51
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    • 2020
  • The purpose of this study was to investigate the possibility of eco-friendly/efficient recovery of valuable resources, such as Au from mine tailings, which are environmental pollutants in the Mongolian mine sector. For this purpose, this study selected 4 place of mine tailings of the Mongolian mines sector and carried out mineralogy evaluation of the valuable resources in the tailings. In this study, flotation was performed to separate and concentrate valuable resources in the tailings. Microwave nitric acid leaching was used to leach the valuable resources contained in the sample and to improve the Au grade. Chloride leaching attempted to leach Au from the leaching residues. XRD analysis of the tailings samples showed that most of the samples consisted of silicate minerals. As a result of confirming the content of the element through XRF analysis, the SiO2 content was very high, the Fe2O3 content was 2.32-4.23%, and the content of PbO, CuO and ZnO components were all within 2%. As a result of flotation for the tailings samples, the recovery of Au was the highest in Bayanairag sample (95.38%). As a result of microwave nitric solution experiment on Au concentrate sample obtained by flotation, the content of Au in the microwave nitrate leaching residue increased by 12.15% from 192.72 g/ton to 216.14g/ton in Khamo sample, the highest increase was 57.58% in Bayanairag sample. TCLP tests on tailings generated after flotation showed dissolution characteristics within EPA. Chloride leaching test was performed to recover Au from solid residues. The leaching rate was 87.43-89.35% within 10 minutes. For Khamo sample, 100% Au was leached after 60 minutes of leaching time. Therefore, in order to process the tailings continuously generated in Mongolia, applying the same process as the present study is expected to effectively recover the valuable resources contained in the tailings.

Photoluminescence Studies of ZnO Nanorods Grown by Vapor Phase Transport (기상이동법으로 성장한 산화아연 나노막대의 포토루미네슨스 분석)

  • Kim, Soaram;Cho, Min Young;Nam, Giwoong;Kim, Min Su;Kim, Do Yeob;Yim, Kwang Gug;Leem, Jae-Young
    • Korean Journal of Metals and Materials
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    • v.49 no.10
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    • pp.818-822
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    • 2011
  • ZnO nanorods were grown on Au-coated Si substrates by vapor phase transport (VPT) at the growth temperature of $600^{\circ}C$ using a mixture of zinc oxide and graphite powders as source material. Au thin films with the thickness of 5 nm were deposited by ion sputtering. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the ZnO nanorods. Five peaks at 3.363, 3.327, 3.296, 3.228, and 3.143 eV, corresponding to the free exciton (FX), neutral donor bound exciton ($D^{\circ}X$), first order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, and FX-3LO emissions, were obtained at low-temperature (10 K). The intensity of these peaks decreased and their position was red shifted with the increase in the temperature. The FX emission peak energy of the ZnO nanorods exhibited an anomalous behavior (red-blue-red shift) with the increase in temperature. This is also known as an "S-shaped" emission shift. The thermal activation energy for the exciton with increasing temperature in the ZnO nanorods is found to be about 26.6 meV; the values of Varshni's empirical equation fitting parameters are = $5{\times}10^{-4}eV/K$, ${\beta}=350K$, and $E_g(0)=3.364eV$.

Synthesis and Low-concentration (50 ppm) NO2 Sensing Properties of Bare and ZnO (n) Decorated TeO2 (p) Nanowires (ZnO가 첨가된 TeO2 나노와이어의 합성 및 저농도(50 ppm) 이산화질소 가스 센싱 특성)

  • Yu, Dong Jae;Shin, Ka Yoon;Oum, Wansik;Kang, Suk Woo;Kim, Eun Bi;Kim, Hyeong Min;Kim, Hyoun Woo
    • Korean Journal of Materials Research
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    • v.32 no.10
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    • pp.435-441
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    • 2022
  • We report the synthesis and gas sensing properties of bare and ZnO decorated TeO2 nanowires (NWs). A catalyst assisted-vapor-liquid-solid (VLS) growth method was used to synthesize TeO2 NWs and ZnO decoration was performed using an Au-catalyst assisted-VLS growth method followed by a subsequent heat treatment. Structural and morphological analyses using X-ray diffraction (XRD) and scanning/transmission electron microscopies, respectively, demonstrated the formation of bare and ZnO decorated TeO2 NWs with desired phase and morphology. NO2 gas sensing studies were performed at different temperatures ranging from 50 to 400 ℃ towards 50 ppm NO2 gas. The results obtained showed that both sensors had their best optimal sensing temperature at 350 ℃, while ZnO decorated TeO2 NWs sensor showed much better sensitivity towards NO2 relative to a bare TeO2 NWs gas sensor. The reason for the enhanced sensing performance of the ZnO decorated TeO2 NWs sensor was attributed to the formation of ZnO (n)/ TeO2 (p) heterojunctions and the high intrinsic gas sensing properties of ZnO.

Optical and Electrical Properties of ZnO Hybrid Structure Grown on Glass Substrate by Metal Organic Chemical Vapor Deposition (유기금속화학증착법으로 유리기판 위에 성장된 산화아연 하이브리드 구조의 광학적 전기적 특성)

  • Kim, Dae-Sik;Kang, Byung Hoon;Lee, Chang-Min;Byun, Dongjin
    • Korean Journal of Materials Research
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    • v.24 no.10
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    • pp.543-549
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    • 2014
  • A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

Power Generating Characteristics of Zinc Oxide Nanorods Grown on a Flexible Substrate by a Hydrothermal Method

  • Choi, Jae-Hoon;You, Xueqiu;Kim, Chul;Park, Jung-Il;Pak, James Jung-Ho
    • Journal of Electrical Engineering and Technology
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    • v.5 no.4
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    • pp.640-645
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    • 2010
  • This paper describes the power generating property of hydrothermally grown ZnO nanorods on a flexible polyethersulfone (PES) substrate. The piezoelectric currents generated by the ZnO nanorods were measured when bending the ZnO nanorod by using I-AFM, and the measured piezoelectric currents ranged from 60 to 100 pA. When the PtIr coated tip bends a ZnO nanorod, piezoelectrical asymmetric potential is created on the nanorod surface. The Schottky barrier at the ZnO-metal interface accumulates elecntrons and then release very quickly generating the currents when the tip moves from tensile to compressed part of ZnO nanorod. These ZnO nanorods were grown almost vertically with the length of 300-500 nm and the diameter of 30-60 nm on the Ag/Ti/PES substrate at $90^{\circ}C$ for 6 hours by hydrothermal method. The metal-semiconductor interface property was evaluated by using a HP 4145B Semiconductor Parameter Analyzer and the piezoelectric effect of the ZnO nanorods were evaluated by using an I-AFM. From the measured I-V characteristics, it was observed that ZnO-Ag and ZnO-Au metal-semiconductor interfaces showed an ohmic and a Schottky contact characteristics, respectively. ANSYS finite element simulation was performed in order to understand the power generation mechanism of the ZnO nanorods under applied external stress theoretically.

Au Catalyst Free and Effect of Ga-doped ZnO Seed Layer on Structural Properties of ZnO Nanowire Arrays

  • Yer, In-Hyung;Roh, Ji-Hyoung;Shin, Ju-Hong;Park, Jae-Ho;Jo, Seul-Ki;Park, On-Jeon;Moon, Byung-Moo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.354-354
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    • 2012
  • In this study, we report the vertically aligned ZnO nanowires by using different type of Ga-doped ZnO (GZO) thin films as seed layers to investigate how the underlying GZO film micro structure affects the distribution of ZnO nanowires. Arrays of highly ordered ZnO nanowires have been synthesized on GZO thin film seed layer prepared on p-Si substrates ($7-13{\Omega}cm$) with utilize of a pulsed laser deposition (PLD). With the vapor-liquid-solid (VLS) growth process, the ZnO nanowire synthesis carries out no metal catalyst and is cost-effective; furthermore, The GZO seed layer facilitates the uniform growth of well-aligned ZnO nanowires. The influence of the growth temperature and various thickness of GZO seed layer have been analyzed. Crystallinity of grown seed layer was studied by X-Ray diffraction (XRD); diameter and morphology of ZnO nanowires on seed layer were investigated by field emission scanning electron microscopy (FE-SEM). Our results suggest that the GZO seed layer with high c-axis orientation, good crystallinity, and less lattice mismatch is key parameters to optimize the growth of well-aligned ZnO nanowire arrays.

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Work function variation of doped ZnO nanorods by Kelvin probe force microscopy

  • Ben, Chu Van;Hong, Min-Chi;Yang, Woo-Chul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.446-446
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    • 2011
  • One dimensional (1-D) structures of ZnO nanorods are promising elements for future optoelectronic devices. However there are still many obstacles in fabricating high-quality p-type ZnO up to now. In addition, it is limited to measure the degree of the doping concentration and carrier transport of the doped 1-D ZnO with conventional methods such as Hall measurement. Here we demonstrate the measurement of the electronic properties of p- and n-doped ZnO nanorods by the Kelvin probe force microscopy (KPFM). Vertically aligned ZnO nanorods with intrinsic n-doped, As-doped p-type, and p-n junction were grown by vapor phase epitaxy (VPE). Individual nanowires were then transferred onto Au films deposited on Si substrates. The morphology and surface potentials were measured simultaneously by the KPFM. The work function of the individual nanorods was estimated by comparing with that of gold film as a reference, and the doping concentration of each ZnO nanorods was deduced. Our KPFM results show that the average work function difference between the p-type and n-type regions of p-n junction ZnO nanorod is about ~85meV. This value is in good agreement with the difference in the work function between As-doped p- and n-type ZnO nanorods (96meV) measured with the same conditions. This value is smaller than the expected values estimated from the energy band diagram. However it is explained in terms of surface state and surface band bending.

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Application of Microwave-HClO Leaching for On-board Recovery of Au in Hydrothermal Minerals (열수광물내 Au의 선상회수를 위한 마이크로웨이브-차아염소산 용출 적용성)

  • Kim, Hyun Soo;Myung, Eun Ji;Kim, Min Sung;Lee, Sung-Jae;Park, Cheon-young
    • Korean Journal of Mineralogy and Petrology
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    • v.33 no.3
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    • pp.243-250
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    • 2020
  • The purpose of this study is to find out the possibility of applying microwave-hypochlorous acid leaching to effectively leaching Au in hydrothermal minerals on board. The comparative leaching experiment were confirmed that the leaching rate of Au with(T1)/with out(T2) of microwave nitric acid leaching. In addition, the leaching rate of Au on the conventional leaching by mechanical agitation(T3) and microwave leaching was compared. The result of microwave nitric acid leaching(solid-liquid ratio; 10%, leaching temperature; 90 ℃, leaching time; 20 min) confined that the metal leaching rate was high in the order of As>Pb>Cu>Fe>Zn, and the content of Au in the leaching residue was increased from 33.77 g/ton to 60.02 g/ton. As a result of the comparative leaching experiment using a chloride solvent, the dissolution rate of Au was high in the order of T1(61.10%)>T3(53.30%)>T2(17.30%). Therefore, chloride, which can be manufactured using seawater and that can be recycled by collecting chlorine gas generated in the leaching process, is expected to be an optimal solvent for Au leaching. In addition, the application of microwaves is believed to be effective in terms of time, efficiency and energy.

CO Gas Sensing Characteristic of ZnO Nanowires Based on the a-, cand m-plane Oriented 4H-SiC Substrate at 300℃ (a-, c-, m-면방향의 4H-SiC 기판에 형성된 ZnO 나노선 가스센서의 300℃에서 CO 가스 감지 특성)

  • Jeong, Gyeong-Hwan;Lee, Jung-Ho;Kang, Min-Seok;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.6
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    • pp.441-445
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    • 2013
  • ZnO nanowires on the a-, c- and m-plane oriented 4H-SiC substrates were grown by using a high temperature tube furnace. Ti/Au electrodes were deposited on ZnO nanowires and a-, c- and m-plane 4H-SiC substrates, respectively. The shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. It was found that the growth direction of nanowires depends strongly on growth parameters such as growth temperature and pressure. In this work, The sensitivity of nanowires formed a-, c- and m-plane oriented 4H-SiC gas sensor was measured at $300^{\circ}C$ with CO gas concentration of 80%. The nanowires grown on a-plane oriented 4H-SiC show improved sensing performance than those on c- and m-plane oriented 4H-SiC due to the increased density of nanowire on a-plane 4H-SiC.

Element Dispersion by the Wallrock Alteration of Janggun Lead-Zinc-Silver Deposit (장군 연-아연-은 광상의 모암변질에 따른 원소분산)

  • Yoo, Bong Chul
    • Economic and Environmental Geology
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    • v.45 no.6
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    • pp.623-641
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    • 2012
  • The Janggun lead-zinc-silver deposit is hydrothermal-metasomatic deposit. We have sampled wallrock, hydrother-maly-altered rock and lead-zinc-silver ore vein to study the element dispersion during wallrock alteration. The hydrothermal alteration that is remarkably recognized at this deposit consists of rhodochrositization and dolomitization. Wallrock is dolomite and limestone that consisit of calcite, dolomite, quartz, phlogopite and biotite. Rhodochrosite zone occurs near lead-zinc-silver ore vein and include mainly rhodochrosite with amounts of calcite, dolomite, kutnahorite, arsenopyrite, pyrite, chalcopyrite, sphalerite, galena and stannite. Dolomite zone occurs far from lead-zinc-silver ore vein and is composed of mainly dolomite and minor calcite, rhodochrosite, pyrite, sphalerite, chalcopyrite, galena and stannite. The correlation coefficients among major, trace and rare earth elements during wallrock alteration show high positive correlations(dolomite and limestone = $Fe_2O_3(T)$/MnO, Ga/MnO and Rb/MnO), high negative correlations(dolomite = MgO/MnO, CaO/MnO, $CO_2$/MnO, Sr/MnO; limestone = CaO/MnO, Sr/MnO). Remarkable gain elements during wallrock alteration are $Fe_2O_3(T)$, MnO, As, Au, Cd, Cu, Ga, Pb, Rb, Sb, Sc, Sn and Zn. Remarkable loss elements are CaO, $CO_2$, MgO and Sr. Therefore, elements(CaO, $CO_2$, $Fe_2O_3(T)$, MgO, MnO, Ga, Pb, Rb, Sb, Sn, Sr and Zn) represent a potential tools for exploration in hydrothermal-metasomatic lead-zinc-silver deposits.