• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.176-180
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• 2006

[ $(Na_{0.5}Bi_{0.5})TiO_3$ ][NBT] thin films were prepared on a highly (100) oriented $LaNiO_3[LNO]$ by sol-gel process. X-ray diffraction patterns of the NBT films annealed above $600^{\circ}C$ for 5 minutes have confirmed a highly (100) oriented growth and pseudocubic structure (a=3.884${\AA}$). The (l00) orientation factor increased from 90 to $99\%$ with increasing soaking time from 5 to 60 minutes at $600^{\circ}C$. The NBT films ($600^{\circ}C$/5 min,) have a flat and dense microstructure with large columnar grains, and their grain size are about 44 nm. The Au/NBT/LNO/Si hetero structure sample show a ferroelectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.813-816
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• 2002

We investigate the junction between CdZnTe and a variety of metals with the aim of determining whether the choice of metal can improve the performance of X-ray image detectors, in particular minimizing the dark current. The samples consist of $5{\mu}m$ thick CdZnTe with top electrodes formed from In, Al, and Au. For each metal, current transients following application of valtages from -10V to 10V are measured for up to 1 hour. We find that dark currents depending on the metal used. The current is controlled by hole injection at the metal-CdZnTe junction and there is consistent trend with the metal's work function possibly and it seems that metal to CdZnTe layer junction is ohmic contact.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.360-366
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• 2013

For conventional electrical actuators, the materials are mainly made up of metals, which mean they are prone to corrosion and electrical sparking. Replacing these systems with polymer metal composite based materials can be solved both problems. Considering their excellent electromechanical property, low device fabrication cost, light weight, and good electrical conductivity, the actuator based on ionic polymer metal composite (IPMC) was fabricated using Nafion film, NaOH 0.1 molar solution, and Au electrode. IPMCs exhibit good electrostatic property which means they can in principle be used in making actuators based on electromechanical motions. The resistance measurements of Nafion film after soaking in NaOH and deionized water were demonstrated and compared each other. The result of sample soaked in NaOH showed better electrical conductivity than in deionized water. The fabricated IPMC actuator exhibits a large deformation of bending displacement of approximately 9 mm with applied low AC voltage 6.89 V at 2.84 Hz. The result of computer simulation was also very similar and shown as a bending displacement of 8.6085 mm.

• Proceedings of the KWS Conference
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• 2005.11a
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• pp.225-227
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• 2005

Sn-8wt%Zn-3wt%Bi (이하, Sn-8Zn-3Bi) 솔더의 장기 신뢰성을 평가하기 위하여 열 충격 시험을 행하였다. 열 충격 시험은 $-40^{\circ}C$에서 $80^{\circ}C$범위에서 1000 사이클 동안 하였다. 접합 기판으로는 각각 OSP(Organic Solderability Preservative), Sn 그리고 Ni/Au 처리를 한 PCB(Printed Circuit Board) 패드를 사용하였다. 접합에 사용한 부품은 1608 Chip(Multi Layer Chip Capacitor, Chip Resistor) 으로 전극 부위에 Sn-37wt%Pb, Sn 도금하여 사용하였다. 솔더링 후 1608 Chip의 전단 강도와 솔더링부에서 미세조직 및 IMC(Inter Metallic Compound) 변화를 관찰하였다. 측정결과, Sn-8Zn-3Bi 솔더의 초기 전단 강도는 기판의 표면처리에 상관없이 약 40N 이상이었다. 그리고 열충격 시험 1000 사이클 후에는 모든 기판에서 2N 정도 약간의 강도 저하를 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.178-178
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• 2008

초소형 박막의 열전 발전모듈은 작은 부피와 한번 설치시 교체없이 지속적인 전원공급으로 소형의 센서 노드에 전원으로 각광 받고 있다. 이에 본 논문에서는 In Plane방식의 PIN Junction의 박막형 열전소자를 제작하여 보았다. 열전 박막인 P-type의 $BiSbTe_3$와 N-type의 $Bi_2Te_3$은 (001)GaAs 기판에 MOCVD(Metal Organic Chemical Vapour Deposition)방식으로 성장하였으며 전극으로는 E-Beam Evaporator를 이용하여 금(Au), 알루미늄(Al)을 사용하였다. 열전박막의 두께는 MOCVD의 성장시간과 온도 MO-x 가스의 압력으로 조절하여 주었다. 제작결과 1Pairs 당 약 $63{\mu}V$/K을 나타내었다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.2
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• pp.93-99
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• 2006

In this paper, we fabricated and evaluated polydimethylsiloxane(PDMS)-based flexible and implantable micro electrodes. The electrode patterning was carried out with the photolithography and chemical etching process after e-beam evaporation of 100 ATi and 1000 A Au. The PDMS substrate was treated by oxygen plasma using reactive ion etching(RIE) system to improve the adhesiveness of PDMS and metal layers. The minimum line width of fabricated micro electrode was 20 $\mu$m. After finished patterning, we did packaging with PDMS and then brought up the electrode's part about 40 $\mu$m with gold electroplating. The Hank's balanced salt solution(HBSS) test was carried out for 6 month for endurance of fabricated micro electrode. We carried out in-vivo test for the evaluation of biocompatibility by implanting electrodes under the ICR mouse skin for 42 days.

• Journal of the Korean Institute of Gas
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• v.12 no.2
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• pp.32-37
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• 2008

For a development of U-safety system, liquid/gas-sensors that are easy to carry and install in any place are needed. Therefore, in this work, we prepared porous gold using a templating method with nanoporous alumina, and it was used as sensing materials and electrode. The resulting materials showed high purity macroporous structure with $200{\sim}300\;nm$ of window-pore and $4.8\;m^2/g$ of surface area. Because porous gold had good electric conductivity, convenience to measure the change of electric resistivity and good reproducibility, it could be used as potential sensing materials. As a proof-of-concept test, the detection test for mercury ion was carried out.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.189.2-189.2
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• 2013

1차원 산화아연 나노구조물은 광대역 에너지 밴드갭(~3.3 eV)과 독특한 물리적 특성을 갖고 있어, 전계효과 트랜지스터(field effect transistor), 발광다이오드(light emitting diode), 자외선 광검출기 (ultraviolet photodetector) 및 태양전지(photovoltaic cell)에 널리 이용되고 있다. 특히, 1차원 산화아연 나노구조물은 직접천이형 에너지 밴드갭(direct bandgap)을 갖고 있으며, 빛으로부터 여기된 전자가 1차원 나노구조물을 통해 향상된 이동경로를 제공할 수 있어서 차세대 자외선 광검출기 응용에 대한 연구가 활발히 진행되고 있다. 한편, 수열합성법(hydrothermal method)을 통해서 1차원 산화아연 나노구조물을 비교적 간단하고 저온공정을 통해서 합성할 수 있는데, 이를 광검출기 소자구조에 응용에서 양전극에 연결하기 위해서는 복잡하고 정교한 공정이 필요하다. 이에 본 연구에서는 수열합성법을 통해 합성된 산화아연 나노로드가 포함된 에탄올 용액을 금(Au) 패턴에 drop-casting을 통해서 간단한 방법으로 metal-semiconductor-metal (MSM) 광검출기를 제작하여 광반응 특성을 분석하였다. 또한 염료를 통해 가시광을 흡수하여 광전류(photocurrent)를 발생시킬 수 있도록 염료를 흡착한 산화아연 나노로드를 이용하여 같은 구조의 MSM 광검출기를 제작하여 가시광에 대한 광반응 특성을 관찰하였다.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.575-578
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• 2011

We fabricated a novel simple and rapid method of three dimensional nanoporous gold thin film (NPGF) onto a Au substrate using electrochemical deposition method. The NPGF-modified electrode analysis by scanning electron microscope and reveals the formation of nanopores, approximately 30~50 nm in diameter. differential pulse voltammetry was measured for the determination of ${\gamma}$-aminobutiric acid in the concentration range of ($10{\sim}100{\mu}M$ using a NPGF. The high sensitivity feature of NPGF is expected to be applied for real sample biosensor applications.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.754-762
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• 1995

Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.