• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1539_1540
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• 2009

본 논문에서는 Porous Au-Pt 전극을 기반으로 연료전극과 공기전극으로 구성된 초소형 메탄올 센서를 설계 및 제작하고 그 특성을 분석해 보았다. 제안된 Porous Au-Pt 전극은 Porous 구조의 금속을 만드는 방법 중 하나인 Templating기법을 적용하여 수백나노 크기의 Pore들을 가진 Porous Au 전극을 제작하였고 그 위에 수 나노 크기의 Pt particles을 전해 도금하여 제작되었다. 고분자 전해질막 층으로서 Nafion film은 전해 도금한 Porous Au-Pt 전극 사이에 삽입하고 hot Pressing 통하여 센서를 구성하였다. Porous Au-Pt 전극을 기반으로한 전기화학 메탄올 센서는 $0.25\;cm^2$ 의 작은 전극 면적에도 불구하고 넓은 온도 범위 ($20^{\circ}C-100^{\circ}C$) 에서 온도에 따른 뛰어난 선형성(Correlation coefficient = 0.986)을 보였으며, 특히, 일정온도 ($60^{\circ}C$)에서 메탄올 농도 0 M에서 2 M 까지의 전류응답 특성을 측정, 분석 결과 메탄올 농도에 따른 9.6 mA/$mM{\cdot}cm^2$ 의 민감도 및 10 초 이내의 응답시간 특성을 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.164-164
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• 2000

Since Au-Pt alloys have various atomic structures depending upon composition and annealing temperature, it is very interesting to investigate the electronic structures of alloys. We studied the changes of the electronic structure I the Au-Pt alloys by x-ray absorption near edge spectroscopy (XANES). Two kinds of Au-Pt alloy samples were prepared by arc melting methods and ion-beam-mixing technique. The Pt L2, 3-edge and Au L2, 3-edge X-ray absorption spectra (XPS) were measured with the electron yield mode detector at the 3C1 beam line of the Pohang Light Source (PLS). It was found that there was a substantial decrease in the area of the Pt L2, 3 white lines compared with that of pure Pt. The observed decrease in white line area was attributed to an increase in the number of pure Pt. The observed decrease in white line area was attributed to an increase in the number of 5d-electrons at the Pt site upon alloy formation. However, the Au L2, 3 edge spectra for Au-Pt alloys are all similar to that of pure Au. This implies that the 5d hole count of Au is not changed by alloy formation with Pt.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.556-560
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• 2016

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

• ETRI Journal
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• v.28 no.6
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• pp.787-789
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• 2006

In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-$Al_2O_3$ substrates. However, pre-growth annealing of the Au thin layer on c-$Al_2O_3$ resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

• Journal of the Korean Vacuum Society
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• v.14 no.3
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• pp.147-152
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• 2005

The structural evolution of $Ni(400\;\AA)/Au(400\;\AA)$ films on p-type GaN during thermal oxidation in ai. was investigated by in situ x-ray scattering experiments. These results indicate that Ni layer and Au layer intermix during thermal oxidation. Au-rich solid solutions containing the different amount of Ni atoms are formed during oxidation. The Ni atoms in Au-rich solid solution out-diffuse as the oxidation proceeds resulting in the formation of NiO(111) phase. Despite of the complete oxidation at $650^{\circ}C$, the position of bulk Au(111) diffraction profile indicates that small amount of Wi atoms are still incorporated in the Au phase.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.101-108
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• 1996

The silicon $p^{+}-n$ junction diodes were fabricated. The fabricated wafers were treated by single or double annealing steps. Single annealing process was performed by diffusion of either Au or Pt into the wafer under the oxygen or nitrogen ambient at $800{\sim}1010^{\circ}C$. Second annealing step involved additional annealing of the single annealed wafer under the oxygen ambient at $800{\sim}1010^{\circ}C$ for one hour. Electrical characteristics of the diodes were investigated to evaluate the effect of the annealing treatments. In the case of single annealing under nitrogen ambient at $1010^{\circ}C$ for one hour, the amount of leakage current of Pt diffused diode was 75 times larger than that of Au diffused one. The optimum processing condition to achieve high speed silicon $p^{+}-n$ junction diodes from this study was obtained when Pt diffused wafer(treated under the nitrogen ambient at $1010^{\circ}C$ for one hour) was secondly annealed in an oxygen ambient at $800^{\circ}C$ for one hour. The resulting leakage current of two step annealed diodes were remarkably reduced to 1/1100 of the single annealed one. The diode characteristics such as recovery time, breakdown voltage, leakage current, and forward voltage were 4ns, 138V, 1.72nA, and 1V, respectively.

• Journal of Technologic Dentistry
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• v.34 no.4
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• pp.345-352
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• 2012

Purpose: The age-hardening mechanism of an Au-Ag-Cu-Pt-Zn alloy for crown and bridge fabrication was investigated by means of hardness test, X-ray diffraction study and field emission scanning electron microscopic observation. Methods: Before hardness testing, the specimens were solution treated and then were rapidly quenched into ice brine, and were subsequently aged isothermally at $400-450^{\circ}C$ for various periods of time in a molten salt bath and then quenched into ice brain. Hardness measurements were made using a Vickers microhardness tester. The specimens were examined at 15 kV using a field emission scanning electron microscope. Results: By the isothermal aging of the solution-treated specimen at $450^{\circ}C$, the hardness increased rapidly in the early stage of aging process and reached a maximum hardness value. After that, the hardness decreased slowly with prolonged aging. However, the relatively high hardness value was obtained even with 20,000 min aging. By aging the solution-treated specimen, the f.c.c. Au-Ag-rich ${\alpha}_0$ phase was transformed into the Au-Ag-rich ${\alpha}_1$ phase and the AuCu I ordered phase. Conclusion: The hardness increase in the early stage of aging process was attributed to the formation of lattice strains by the precipitation of the Cu-rich phase and then subsequent ordering into the AuCu I-type phase. The decrease in hardness in the later stage of aging process was due to the release of coherency strains by the coarsening of tweed structure in the grain interior and by the growth and coarsening of the lamellar structure in the grain boundary. The increase of inter-lamellar space contributed slightly to the softening compared to the growth of lamellar structure toward the grain interior.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.6
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• pp.241-248
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• 2003

$Bi_{1.84}Pb_{0.34}Sr_{1.91}Ca_{2.03}Cu_{3.06}O_{10+\delta}$ high $T_{c}$ superconductors containing Ag as an additive were fabricated by a solid-state reaction method. The superconducting properties, such as the structural characteristics, the critical temperatures, the grain size and the image of mapping on the surface were investigated. Samples with Ag and Au of 50 wt% each were sintered at various temperature(820~$850^{\circ}C$). The structural characteristics, the microstructure of surface and the critical temperature with respect to the each samples were analyzed by XRD and SEM, EDS and four-prove methode respectively. The critical temperature showed the result which the Ag additive samples are higher than Au additive samples. The microstructure of the surface showed the tendency which the Ag additive samples become more minuteness than Au additive samples.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.219-223
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• 2003

Zirconia gels dispersed with fine Au particles have been prepared by the sol-gel method. Starting solution with (OC$Zr_4$$H_{ 9}$)$_4$, $C_4$ $H_{9}$ OH, $H_2$O,$ HNO_3$, $HAuC1_4$ was used to prepare gels in several molar ratio. After hydrolysis, viscosity of solutions as 4∼5 cP and gelling time of sols were spent about 9 days. As the heat-treatment temperature was increased,$ ZrO_2$ had the phase transition from tetragonal to monoclinic at $750^{\circ}C$. Heat-treatments of the gel have performed at 500, 700, 750, 800, 1000 and $1100^{\circ}C$ for 3 hrs, respectively. We have investigated TG-DTA, X-ray diffraction patterns, SEM and EDS. The size of Au fine particles dispersed in the heat-treatmented gel was about 0.15∼0.23 $\mu\textrm{m}$ and the shape was most sphericity.

• Journal of ILASS-Korea
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• v.21 no.2
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• pp.111-115
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• 2016

This paper experimentally reports the effect of suspension stability on the thermal conductivity of water-based Au nanofluids. For this purpose, the water-based Au nanofluids are prepared by the one-step method called electro-chemical method with volume fraction of 0.0005%. The thermal conductivity of water-based Au nanofluids is measured from $22^{\circ}C$ to $42^{\circ}C$ using the transient hot wire method. To quantify the suspension stability of Au nanofluids, the suspension stability of nanofluids is evaluated using the in-house developed laser scattering system at a fixed wavelength of 632.8nm with the elapsed time. Based on the experimental results, the both thermal conductivity and suspension stability of water-based Au nanofluids are gradually decreased according to the time. These results experimentally show that the suspension stability of water-based Au nanofluids is the one of the important factor of thermal conductivity.