• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.84-84
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• 2012

소자가 고집적화 됨에 따라, 비저항이 낮고 electro migration (EM), Stress Migration (SM) 특성이 우수한 구리(Cu)를 배선재료로서 사용하고 있다. 그러나, 구리는 Si과 $SiO_2$의 내부로 확산이 빠르게 일어나, Si 소자 내부에 deep donor level을 형성하고, 누설 전류를 증가시키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 그러나, electroplating 을 이용하여 증착한 Cu 박막은 일반적으로 확산 방지막으로 쓰이는 TiN, TaN, 등의 물질과의 접착 (adhesion) 특성이 나쁘다. 따라서, Cu CMP 에서 증착된 Cu 박막의 벗겨지거나(peeling), EM or SM 저항성 저하 등의 배선에서의 reliability 문제를 야기하게된다. 따라서 Cu 와 접착 특성이 좋은 새로운 확산방지막 또는 adhesion layer의 필요성이 대두되고 있다. 본 연구에서는 이러한 Cu 배선에서의 접착성 문제를 해결하고자 Metal organic chemical vapor deposition (MOCVD)을 이용하여 제조한 코발트(Co) 박막을 $Cu/TaN_x$ 사이의 접착력 개선을 위한 adhesion layer로 적용하려는 시도를 하였다. Co는 비저항이 낮고, Cu 와 adhesion이 좋으며, Cu direct electroplating 이 가능하다는 장점을 가지고 있다. 하지만, 수소 분위기에서 $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) 전구체에 의한 MOCVD Co 박막의 경우 탄소, 산소와 같은 불순물이 다량 함유되어 있어, 비저항, surface roughness 가 높아지게 된다. 따라서 구리 전착 초기에 구리의 핵 생성(nucleation)을 저해하고 핵 생성 후에도 응집(agglomeration)이 발생하여 연속적이고 얇은 구리막 형성을 방해한다. 이를 해결하기 위해, MOCVD Co 박막 증착 시 수소 반응 가스에 암모니아를 추가로 주입하여, 수소/암모니아의 분압을 1:1, 1:6, 1:10으로 변화시켜 $Co/TaN_x$ 박막의 특성을 비교 분석하였다. 각각의 수소/암모니아 분압에 따른 $Co/TaN_x$ 박막을 TEM (Transmission electron microscopy), XRD (X-ray diffraction), AES (Auger electron spectroscopy)를 통해 물성 및 조성을 분석하였고, AFM (Atomic force microscopy)를 이용하여, surface roughness를 측정하였다. 실험 결과, $Co/TaN_x$ 박막은 수소/암모니아 분압 1:6에서 90 ${\mu}{\Omega}-cm$의 낮은 비저항과 0.97 nm 의 낮은 surface roughness 를 가졌다. 뿐만 아니라, MOCVD 에 의해 증착된 Co 박막이4-6 % concentration 의 탄소 및 산소 함량을 가지는 것으로 나타났고, 24nm 크기의 trench 기판 위에 약 6nm의 $Co/TaN_x$ 박막이 매우 균일하게 형성된 것을 확인 할 수 있었다. 이러한 결과들은, 향후 $Co/TaN_x$ 박막이 Cu direct electroplating 공정이 가능한 diffusion barrier로서 성공적으로 사용될 수 있음을 보여준다.

• Journal of the Korean Chemical Society
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• v.35 no.4
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• pp.355-361
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• 1991

The separative preconcentration of trace mercury[Hg(II)] in a water sample was studied by a coprecipitation flotation technique. The trace Hg(II) was precipitated together with Ce(OH)$_3$ by adding 3.0 ml of 0.1M Ce$^{3+}$ solution to 1,000 ml of water sample and adjusting pH to 11.0 with 1.0M NaOH solution. The hydrophobic precipitate[Ce(OH)$_3$-Hg(OH)$_2$], which was formed by adding 2.0 ml of 0.1${\%}$ ethanolic sodium oleate solution, were floated on the surface with an aid of tiny nitrogen gas bubbles. The floated materials were quatitatively collected in a suction flask and dissolved with 5.0 ml of 2.0M HNO$_3$. The solution was marked to 25.00 ml with a deionized water. The content of Hg(II) was determined by cold vapor atomic absorption spectrophotometry. Any interferences of concomitants such as Ag$^+$, Br$^-$, I$^- $, etc. were not observed on the whole procedure. The analytical result showed that Hg(II) found in the wastewater of Seochang Campus, Korea University was 1.98 ng/ml with the relative standard deviation of 3.6${\%}$. And recoveries of Hg(II) in the wastewater into which 1.0 ng/ml and 2.0 ng/ml were added were 95${\%}$ and 91${\%}$, respectively. From such results, this procedure could be concluded to be tolerably accurate and reproducible for the determination of trace mercury in a water sample.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.188-188
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• 2000

DLC (Diamond-Like Carbon) 박막은 높은 경도와 가시광선 및 적외선 영역에서의 광 투과도, 전기적 절연성, 화학적 안정성 및 저마찰.내마모 특성 등의 우수한 물리.화학적인 물성을 갖고 있기 때문에 여러 분야의 응용연구가 이루어지고 있다. 이러한 DLC 박막을 제작하는 과정에는 여러 가지가 있으나, 본 연구에서는 ECR-PECVD electron cyclotron resonance plasma enhanced chemical vapor deposition) 방법을 사용하였다. 이것은 최근에 많이 이용되고 있는 방법으로, 이온화률이 높을뿐만 아니라 상온에서도 성막이 가능하고 넓은 진공도 영역에서 플라즈마 공정이 가능한 장점이 있다. 기판으로는 4" 크기의 S(100)를 사용하였고, 박막을 제작하기 전에 진공 중에서 플라즈마 전처리를 하였다. 플라즈마 전처리는 Ar 가스를 150SCCM 주입시켜 5$\times$10-1 torr 의 진공도를 유지시키면서, ECR power를 700W로 고정하고, 기판 bias 전압을 -300 V로 하여 5분 동안 기판을 청정하였다. DLC 박막은 ECR power를 700W. 가스혼합비와 유량을 CH4/H2 : 10/100 SCCM, 증착시간을 2시간으로 고정하고, 기판 bias 전압을 0, -50, -75, -100, -150, -200V로 변화시켜가면서 제작하였다. 이때 ECR 소스로부터 기판까지의 거리는 150mm로 하였고, 진공도는 2$\times$10-2torr 였으며, 기판 bias 전압은 기판에 13.56 MHz의 RF power를 연결하여 RF power에 의해서 유도되는 negative DC self bias 전압을 이용하였다. 제작된 박막을 Auger electron spectroscopy, elastic recoil detection, Rutherford backscattering spectroscopy, X-ray diffraction, secondary electron microscopy, atomic force microscoy, $\alpha$-step, Raman scattering spectroscopu, Fourier transform infrared spectroscopy 및 micro hardness tester를 이용하여 기판 bias 전압이 DLC 박막의 특성에 미치는 영향을 조사하였다. 분석결과 본 연구에서 제작된 DLC 박막은 탄소와 수소만으로 구성되어 있으며, 비정질 상태임을 알 수 있었다. 기판 bias 전압의 증가에 따라 박막의 두께가 감소됨을 알 수 있었고, -150V에서는 박막이 거의 만들어지지 않았으며, -200V에서는 기판 표면이 식각되었다. 이것은 기판 bias 전압과 ECR 플라즈마에 의한 이온충돌 효과 때문으로 판단되며, 150V 이하에서는 증착되는 양보다 re-sputtering 되는 양이 더 많을 것으로 생각된다. 기판 bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 (dehydrogenation) 현상을 확인할 수 있었으며, 이것은 C-H 결합에너지가 C-C 결합이나 C=C 결합보다 약하여 수소 원자가 비교적 해리가 잘되므로 이러한 현상이 일어난다고 판단된다. 결합이 끊어진 탄소 원자들은 다른 탄소원자들과 결합하여 3차원적 cross-link를 형성시켜 나가면서 내부 압축응력을 증가시키는 것으로 알려져 있으며, hardness 시험 결과로 이것을 확인할 수 있었다. 그리고 표면거칠기는 기판 bias 전압을 증가시킬수록 더 smooth 해짐을 확인하였다.인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.76-76
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• 2000

최근 비정질 SiC 박막은 열과 광안정도면에서 비정질 Si 박막에 비해 우수하며 공정변수들을조절함으로써 비교적 쉽고 다양하게 광학적.전기적 특성을 얻을 수 있고, 낮은 광흡수계수 및 105($\Omega$cm)1 이상의 높은 전도도를 가지고 있어 Plasma Enhanced Chemical Vapor Deposition(PECVD)을 통해 가전자제어 (Valency electron control)가 가능한 비정질 SiC 박막이 제작된 이래 대한 많은 연구가 진행되고 있다. 결정성이 없는 비정질 물질은 상대적으로 낮은 온도에서 성장이 가능하며, 특히 glow-sidcharge 방식으로 저온에서 성장시킬 수 있음에 따라 유리등과 같은 다른 저렴한 물질을 기판으로 이용, 넓은 면적의 비정질 SiC 박막을 성장시켜 여러 분야의 소자에 응용되고 있다. 비정질 SiC 박막이 넓은 에너지띠 간격을 갖는 물질이라는 점과 화학적 안정성 및 높은 경도, 비정질성에 기인한 대면적 성장의 용이성 등의 장점이외에, 원자의 성분비 변화에 의해 에너지띠 간격(1.7~3.1eV)을 조절할 수 있다는 점은 광전소자의 응용에 큰 잠재성이 있음을 나타낸다. PECVD 방식으로 성장된 비정질 SiC 박막은 태양전지의 Window층이나 발광다이오드, 광센서, 광트랜지스터 등에 응용되어 오고 있다. 본 연구에서는, RF-PECVD(ULVAC CPD-6018) 방법에 의하여 비정질 Si1-xCx 박막을 2.73Torr의 고정된 압력에서 RF 전력(50~300W), 증착온도(150~30$0^{\circ}C$), 주입 가스량 (SiH4:CH4)등의 조건을 다양하게 변화시켜가며 증착된 막의 특성을 평가하였다. 성장된 박막을 X-ray Photoelectron Spectroscopy(XPS), UV-VIS spectrophotometer, Ellipsometry, Atomic Force Microscopy(AFM)등을 이용하여 광학적 밴드갭, 광흡수 계수, Tauc Plot, 그리고 파장대별 빛의 투과도의 변화를 분석하였으며 각 변수가 변화함에 따라 광학적 밴드갭의 변화를 정량적으로 조사함으로써 분자결합상태와 밴드갭과 광 흡수 계수간의상관관계를 규명하였고, 각 변수에 따른 표면의 조도를 확인하였다. 비정질 Si1-xCx 박막을 증착하여 특성을 분석한 결과 성장된 박막의 성장률은 Carbonfid의 증가에 따라 다른 성장특성을 보였고, Silcne(SiH4) 가스량의 감소와 함께 박막의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1211-1215
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• 1999

Fluorinated amorphous carbon (a-C:F) films were prepared by an electron cyclotron resonance chemical vapor deposition (ECRCVD) system using a gas mixture of $C_2F_6$ and $CH_4$ over a range of deposition temperature (room temperature ~ 300$^{\circ}C$). 500$^{\AA}C$ thick DLC films were pre-deposited on Si substrate to improve the strength between substrate and a-C:F film. The chemical bonding structure, chemical composition, surface roughness and dielectric constant of a-C:F films deposited by varying the deposition temperature were studied with a variety of techniques, such as Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), atomic force microscopy (AFM) and capacitance-voltage(C-V) measurement. Both deposition rate and fluorine content decreased linearly with increasing deposition temperature. As the deposition temperature increased from room temperature to 300$^{\circ}C$, the fluorine concentration decreased from 53.9at.% down to 41.0at.%. The dielectric constant increased from 2.45 to 2.71 with increasing the deposition temperature from room temperature to 300$^{\circ}C$. The film shrinkage was reduced with increasing deposition temperature. This results ascribed by the increased crosslinking in the films at the higher deposition temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.497-502
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• 2019

Metal oxide nanostructures are promising materials for advanced applications, such as high sensitive gas sensors, and high capacitance lithium-ion batteries. In this study, tin oxide (SnO) nanostructures were grown on a Si wafer substrate using a two-zone horizontal furnace system for a various substrate temperatures. The raw material of tin dioxide ($SnO_2$) powder was vaporized at $1070^{\circ}C$ in an alumina crucible. High purity Ar gas, as a carrier gas, was flown with a flow rate of 1000 standard cubic centimeters per minute. The SnO nanostructures were grown on a Si substrate at $350{\sim}450^{\circ}C$ under 545 Pa for 30 minutes. The surface morphology of the as-grown SnO nanostructures on Si substrate was characterized by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Raman spectroscopy was used to confirm the phase of the as-grown SnO nanostructures. As the results, the as-grown tin oxide nanostructures exhibited a pure tin monoxide phase. As the substrate temperature was increased from $350^{\circ}C$ to $424^{\circ}C$, the thickness and grain size of the SnO nanostructures were increased. The SnO nanostructures grown at $450^{\circ}C$ exhibited complex polycrystalline structures, whereas the SnO nanostructures grown at $350^{\circ}C$ to $424^{\circ}C$ exhibited simple grain structures parallel to the substrate.

• Journal of Preventive Medicine and Public Health
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• v.27 no.1 s.45
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• pp.44-58
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• 1994

This study was conducted to examine the levels of total and organic mercury in the scalp hair of the elementary school children and adults, and their relationship with the consumption pattern of fishes and shellfishes. The scalp hair samples were collected from the occipital part of 115 children and 131 adults in costal, urban and rural areas of Kyungpook province from June to August 1991. The mercury content was analysed by the atomic absorption spectrophotometer (model IL. 555) with atomic vapor accessory (model IL. 440). The total and organic mercury contents of hair were significantly higher (p<0.01) among the children who prefer fish and/or shellfish (7.728 ppm, 6.610 ppm), and canned fish and/or fish pastes (6.969 ppm, 5.885 ppm) than those who prefer meat (4.822 ppm, 3.905 ppm) and vegetables (3.974 ppm, 3.224 ppm). The children who prefer to eat the canned fish without cooking showed a higher mercury content than the children who prefer to eat it as stew or mixed with vegetables (p<0.01). There was a dose-response relationship between the intake frequency of canned fish, raw fish and cooked fish and the content of total and organic mercury of hair, the children who eat fish almost everyday showed 2 times higher than those who eat rarely (p<0.01). The mercury content in the hair of the children who eat raw fish was significantly higher than that of the children who eat boiled or broiled fish (p<0.01). The total and organic mercury contents of adult scalp hair increased with age up to the forties and slightly decreased in the fifties. The mercury contents of those who were engaged in the fishery and raw fish restaurant were 2 times higher than those of the farmers. The mercury content of the persons who were favorite dishes of fish and shellfish were most high, and who prefer raw fish were 2 times higher than those of the persons who prefer vegetables and broiled fish. The contents of total and organic mercury in adult scalp hair showed also a increasing tendency with the intake frequency of raw and cooked fish.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of Biomedical Engineering Research
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• v.25 no.2
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• pp.157-163
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• 2004

Nitrogen ion implantation and ion plating techniques were applied for improvement of the wear resistance of metallic implant materials. In this work, the wear dissolution behaviour of a nitrogen ion implanted super stainless steel (S.S.S, 22Cr-20Ni-6Mo-0.25N) was compared with those of S.S.S, 316L SS and TiN coated 316L SS. The amounts of Cr and Ni ions worn-out from the specimens were Investigated using an electrothermal atomic absorption spectrometry. Furthermore, the Ti(Grade 2) disks were coated with TiN, ZrN and TiCN by use of low temperature arc vapor deposition and the wear resistance of the coating layers was compared with that of titanium. The chemical compositions of the nitrogen ion implanted and nitride coated layers were examined with a scanting auger electron spectroscopy. It wat observed that the metal ions released from the nitrogen ion implanted S.S.S surface were significantly reduced. From the results obtained, it was shown that the nitrogen ion implanted zone obtained with 100 KeV ion energy was easily removed within 200,000 revolutions from a wear dissolution testing under a similar load condition when applied to artificial hip joint. The remarkable improvement in wear resistance weir confirmed by the nitrides coated Ti materials and the wear properties differ greatly according to the chemical composition of the coating layers. for specimens with the same coating thickness of about 3$\mu\textrm{m}$, TiCN coated Ti showed the highest wear resistance. However, after removing the coating layers, the wear rates of all nitrides coated Ti reverted to their normal rates of below 10,000 revolutions from Ti-disk-on-disk wear testing under the same load condition. From the results obtained, it is suggested that the insufficient depth of the 100 Kel N$\^$＋/ ion implanted zone and of the nitrides coated layers of 3$\mu\textrm{m}$ are subject to restriction when used as frictional parts of load bearing implants.