• Tribology and Lubricants
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• v.38 no.6
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• pp.235-240
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• 2022

Atomically-thin 2D nanomaterials can be easily deformed and have surface corrugations which can influence the frictional characteristics of the 2D nanomaterials. Chemical vapor deposition (CVD) graphene can be grown in a wafer scale, which is suitable as a large-area surface coating film. The CVD growth involves cooling process to room temperature, and the thermal expansion coefficients mismatch between graphene and the metallic substrate induces a compressive strain in graphene, resulting in the surface corrugations such as wrinkles and atomic ripples. Such corrugations can induce the friction anisotropy of graphene, and therefore, accurate imaging of the surface corrugation is significant for better understanding about the friction anisotropy of CVD graphene. In this work, the combinatorial analysis using friction force microscopy (FFM) and transverse shear microscopy (TSM) was implemented to unveil the friction anisotropy of CVD bi-layer graphene. The periodic friction anisotropy of the wrinkles was measured following a sinusoidal curve depending on the angles between the wrinkles and the scanning tip, and the two domains were observed to have the different friction signals due to the different directions of the atomic ripples, which was confirmed by the high-resolution FFM and TSM imaging. In addition, we revealed that the atomic ripples can be easily suppressed by ironing the surface during AFM scans with an appropriate normal force. This work demonstrates that the friction anisotropy of CVD bilayer graphene is well-correlated with the corrugated structures and the local friction anisotropy induced by the atomic ripples can be controllably removed by simple AFM scans.

• Nuclear Engineering and Technology
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• v.42 no.6
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• pp.662-669
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• 2010

To develop the manufacturing methods for the blanket first wall (FW) of the International Thermonuclear Experimental Reactor (ITER) and to verify the integrity of the joint, Be/Cu mockups were fabricated and tested at the KoHLT-1 (Korea Heat Load Test facility), a graphite heater facility located at the Korea Atomic Energy Research Institute (KAERI). Since Be and Cu joining is the focus of the present study, the fabricated mockups had a CuCrZr heat sink joined with three Be tiles as an armor material, unlike the original ITER blanket FW, which has a stainless steel structure and coolant tubes. Hot isostatic pressing (HIP) was carried out at $580^{\circ}C$ and 100 MPa for 2 hours as the method for Be/Cu joining. Three interlayers, namely, $1{\mu}mCr/10{\mu}mCu$, $1{\mu}mTi/0.5{\mu}mCr/10{\mu}mCu$, and $5{\mu}mTi/10{\mu}mCu$ were applied as a coating to the Be tiles by a physical vapor deposition (PVD) method. A shear test was performed with the specimens, which were fabricated by the same methods as those used to fabricate the mockups. The average values were 125 MPa to 180 MPa, and the samples with the $1{\mu}mCr/10{\mu}mCu$ interlayer showed the lowest value. No defect or delamination was found in the joints of the mockups by the developed ultrasonic test using a flat-type probe with a 10 MHz frequency and a 0.25 inch diameter. High heat flux (HHF) tests were performed at $1.0\;MW/m^2$ heat flux for each mockup using the given conditions, and the results were analyzed by ANSYS-CFX code. For the test criteria, an expected fatigue lifetime about 1,000 cycles was obtained by analysis with ANSYS-mechanical code. Mockups using the interlayers of $1{\mu}mTi/0.5{\mu}mCr/10{\mu}mCu$ and $5{\mu}mTi/10{\mu}mCu$ survived up to 1,100 cycles over the required number of cycles. However, one of the Be tiles in the other two mockups using the $1{\mu}mCr/10{\mu}mCu$ interlayer was detached during the screening test, and others were detached by discharge after 862 cycles. The integrity of the joints using the proposed interlayers was proven by the HHF test, but the other interlayer requires more study before it can be used for the joining of Be to Cu. Moreover, it was confirmed that the measured temperatures agreed well with the analysis temperatures, which were used to estimate the lifetime and that the developed facility showed its capability of the long time operation.

• Membrane Journal
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• v.30 no.2
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• pp.97-110
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• 2020

CO₂ capture and storage (CCS) is one of the promising technologies that can mitigate ever-growing emission of anthropogenic carbon dioxide and resultant climate change. Among them, chemical looping combustion (CLC) and calcium looping (CaL) are getting increasing attention recently as the prospective alternatives to the existing amine scrubbing. Both methods use metal oxides in the process and consist of cyclic reactions. Yet, due to their cyclic nature, they both need to resolve sintering-induced cyclic stability deterioration. Moreover, the structure of the metal oxides needs to be optimized to enhance the overall performance of CO₂ capture and storage. Deposition of thin film coating on the metal oxide is another way to get rid of wear and tear during the sintering process. Chemical vapor deposition or atomic layer deposition are the well-known, established methods to form thin film membranes, which will be discussed in this review. Various effective recent developments on structural modification of metal oxide and incorporation of stabilizers for cyclic stability are also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.270-270
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• 2016

We fabricated an organic-inorganic nano laminated encapsulation layer using molecular layer deposition (MLD) combined with atomic layer deposition (ALD). The $Al_2O_3$ inorganic layers as an effective single encapsulation layer were deposited at 80 degree C using ALD with alternating surface-saturation reactions of TMA and $H_2O$. A self-assembled organic layers (SAOLs) were fabricated at the same temperature using MLD. MLD and ALD deposition process were performed in the same reaction chamber. The prepared SAOL-$Al_2O_3$ organic-inorganic nano laminate films exhibited good mechanical stability and excellent encapsulation property. The measurement of water vapor transmission rate (WVTR) was performed with Ca test. We controlled thickness-ratio of organic and inorganic layer, and specific ratio showed a lowest WVTR value. Also this encapsulation layer contained very few pin-holes or defects which were linked in whole area by defect test. To apply into real OLEDs panels, we controlled a film stress from tensile to compressive and flexibility defined as an elastic modulus with organic-inorganic ratio. It has shown that OLEDs panel encapsulated with nano laminate layer exhibits better properties than single layer encapsulated in acceleration conditions. These results indicate that the organic-inorganic nano laminate thin films have high potential for flexible display applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.179-179
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• 2010

다양한 분야에서 확산 방지막은 소자의 신뢰성 향상에 중요한 역할을 하고 있다. 최근 반도체에 적용되기 시작한 구리 배선 형성 공정에서도 실리콘이나 실리콘 산화막으로 구리가 확산하는 것을 방지하는 기술이 중요한 부분을 차지하고 있다. 기존 physical vapor deposition (PVD)법을 이용한 $TaN_x$ 확산 방지막 형성 기술이 성공적으로 적용되고 있으나 반도체의 최소선폭이 지속적으로 감소함에 따라 한계에 다다르고 있다. 20 nm 급과 그 이하의 구리 배선을 위해서는 5 nm 이하의 매우 얇고 높은 피복 단차율을 가진 확산 방지막 형성 기술이 요구된다. 또한, 요구 두께의 감소에 따라 더 우수한 확산 방지 특성이 요구된다. Atomic layer deposition (ALD)은 박막의 정교한 두께 조절이 가능하며 높은 종횡비를 가지는 구조에서도 균일한 박막 형성이 가능하다. 이번 연구에서는 다른 질소 함량을 가진 $TaN_x$ 박막을 Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT) 전구체와 $H_2+N_2$ 반응성 플라즈마를 사용하여 plasma enhanced atomic layer deposition (PEALD) 법으로 형성하였다. 박막 내질소 함량에 따라 $TaN_x$의 상 (phase)과 미세구조 변화가 관찰되었고, 이러한 물성의 변화는 확산 방지 특성에 영향을 주었다. TEM (Transmission electron microscopy)과 SEM (scanning electron microscope), XPS (x-ray photoelectron spectroscopy)를 통해 $TaN_x$의 물성을 분석하였고, 300 도에서 700 도까지 열처리 후 XRD (x-ray deffraction)와 I-V test를 통해 확산 방지막의 열적 안정성이 평가되었다. PEALD를 통해 24 nm 크기의 trench 기판 위에 약 4 nm의 $TaN_x$ 확산 방지막이 매우 균일하게 형성할 수 있었으며 향후 구리 배선에 효과적으로 적용될 것으로 예상된다.

• Progress in Superconductivity
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• v.8 no.1
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• pp.27-32
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• 2006

[$YBa_2Cu_3O_{7-x}$] thin films were deposited on various buffered-templates by a metal organic chemical vapor deposition(MOCVD). Three different templates of $CeO_2/YSZ/CeO_2/pure-Ni(CYC),\;CeO_2/YSZ/Y_2O_3/Ni-3at.%W(YYC)$ and $CeO_2/IBAD-YSZ$/stainless steel were used. The Ni and Ni-W alloy tapes were biaxially textured by cold rolling and annealing heat treatment. The dense YBCO films were grown on both the IBAD and YYC templates with no microcrack, while the YBCO films on the CYC templates were grown with the formation of microcracks and NiO. The YBCO film on the YYC template showed the higher $I_c$ than that on CYC template. Especially, the IBAD templates with a thin $CeO_2$(type I) and thick $CeO_2$(type II) top layer were used to compare the deposition nature of the YBCO on them. Comparing the current property of the YBCO films on IBAD templates, the YBCO film deposited on thick $CeO_2$ layer was better than the film on thin $CeO_2$ layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.265-265
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• 2013

We have investigated the influences of dangling bonds generated by alpha particle irradiation on friction and adhesion properties of graphene. Single layer of graphene grown with chemical vapor deposition on copper foil was irradiated by the alpha beam with the average energy of 3.04 MeV and the irradiation dosing between $1{\times}10^{14}$ and $1{\times}10^{15}$/$cm^3$. Raman spectroscopic showed that the ${\pi}$ electron states below Fermi level arises and the $I_D$/$I_G$ increases as increasing the dosing of alpha particle irradiation. The core level X-ray photoelectron (XPS) revealed that these defects represent the creation of various carbon-related defects and dangling bond. The nanoscale tribological properties were investigated with atomic force microscopy in ultrahigh vacuum. The friction appeared to increase remarkably as increasing the amount of dosing, indicating that the dangling bonds on graphene layers enhances the energy dissipations in friction. This trend can be explained by the additional channel of energy dissipation by dangling bond or O- and H- terminated clusters created by alpha particle irradiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.175-175
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• 2008

투명전극으로 사용되고 있는 Indium tin oxide (ITO) 박막은 전기적 전도도와 기판과의 접확성, 화학적 안정성, 광투과율 등의 특성과 함께 우수한 전기 광학적 거동을 보이고 있다. 그러나 ITO는 고가의 재료이기 때문에 대체 투명전극으로 Al을 도핑한 ZnO 박막의 연구가 활발히 진행되고 있다. ZnO:Al 박막은 chemical vapor deposition, reactive magnetron sputtering, electron-beam evaporation, pulsed laser deposition 등의 당양한 방법을 이용하여 증착하였다. 그러나 최근 낮은 온도에서 대면적의 균일성과 우수한 특성 때문에 atomic layer depositon (ALD) 방법을 이용하여 많은 연구가 진행되고 있으며, 이런 투명전극은 태양전지를 위해 연구되어지고 있다. 따라서 본 연구에서는 ALD 방법으로 Al의 도핑 양을 조절하여, ZnO:Al 박막을 제조하여 그 특성을 평가하고, 또한 ZnO TFT를 제작하여 발표하고자 한다. ZnO와 ZnO:Al 박막은 실리콘과 유리 기판 위에 ALD (Lucida-D200, NCD Technology) 장치로 증착하였다. DEZn, TMA, $H_2O$는 ZnO와 ZnO:Al 박막을 증착하기 위한 전구체와 반응가스로 사용하였다. 증착된 박막은 XRD와 HRTEM을 이용하여 결정구조와 미세구조를 분석하였다. AFM과 4-point probe를 이용하여 증착된 박막의 표면 거칠기와 면저항을 관찰하였다. semiconductor parameter 분석기를 이용하여 제작된 ZnO TFT를 평가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.99-102
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• 2003

Tin dioxide thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition process to find the relationship between physicochemical properties and the annealing treatments. The small grains with heat treatments grew to the bunch of grains and then showed the hillocks on the film surface. The thickness decreased with annealing treatment. The measured binding energy (BE) and branching ratio of the Sn 3d spin-orbital doublet were typical of oxidized states of Sn and the BE of the O1s core level of about 530~530.65eV also confirmed the presence of O-Sn bonds. The BE of oxygen and tin with annealing treatment shifted to higher position. O/Sn atomic ratios of films deposited at $375^{\circ}C$ for 2min and 4min were 1.99 and 2.01, respectively. The value of the atomic ratio O/Sn of films deposited at $375^{\circ}C$ for 2min changed from 1.99 to 2.45 with annealing treatment. Gas sensitivity depended on annealing temperature, the sensitivity increased with increasing annealing temperature.