• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.543-551
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• 2012

In this study, transparent conducting Al-doped Zinc Oxide (AZO) films with a thickness of 150 nm were prepared on corning glass substrate by the RF magnetron sputtering with using a Al-doped zinc oxide (AZO), ($Al_2O_3$: 2 wt%) target at room temperature. This study investigated the effect of rapid thermal annealing temperature and oxygen ambient on structural, electrical and optical properties of Al-doped zinc oxide (AZO) thin films. The films were annealed at temperatures ranging from 400 to $700^{\circ}C$ by using Rapid thermal equipment in oxygen ambient. The effect of RTA treatment on the structural properties were studied by x-ray diffraction and atomic force microscopy. It is observed that the Al-doped zinc oxide (AZO) thin film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas reveals the strongest XRD emission intensity and narrowest full width at half maximum among the temperature studied. The enhanced UV emission from the film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas is attributed to the improved crystalline quality of Al-doped zinc oxide (AZO) thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.241-247
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• 2006

Structural studies have been performed on precipitation hardening discovered in $L1_2-ordered\;Ni_3(Al,Cr)$ containing 0.2 to 3.0 mol% of carbon using transmission electron microscopy (TEM). Fine octahedral precipitates of $M_{23}C_6$ appeared in the matrix by aging at temperatures around 973 K after solution treatment at 1423 K. TEM examination revealed that the $M_{23}C_6$ phase and the matrix lattices have a cube-cube orientation relationship and keep partial atomic matching at the {111} interface. After prolonged aging or by aging at higher temperatures, the $M_{23}C_6$ precipitates then adopt a rod-like morphology elongated parallel to the <100> directions. Deformation at temperature below 973 K, typical Orowan loops were observed surrounding the $M_{23}C_6$ particles. At higher deformation temperatures, the Orowan loops disappeared and the morphology of dislocations at the particle-matrix interfaces suggested the existence of attractive interaction between dislocations and particles. The change of the interaction modes between dislocation and particles with increasing deformation temperature can be considered as a result of strain relaxation at the interface between matrix and particles.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.25 no.4
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• pp.301-305
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• 2012

In this work the mechanical behaviors of GaN nanowires are analyzed during tension, compression, and unloading deformations. The thermal conductivity of the nanowires at each deformed state is evaluated using an equilibrium Green-Kubo approach. Under tensile loading, the [0001]-oriented nanowires with hexagonal cross-sections undergo a phase transformation from wurtzite to a tetragonal structure. The phase transformation is not observed under compressive loading. The thermal conductivity decreases on going from compressive strains to tensile strains. The strain dependence of the thermal conductivity results from the relaxation time of phonon. A reverse transformation from the tetragonal structure to the wurtzite structure is observed during unloading. The thermal conductivities in the intermediate states are lower than the conductivity in the wurtzite structure at same strain. Such differences in the thermal conductivity between different atomic structures are mainly due to changes in the group velocity of phonon.

• Asian-Australasian Journal of Animal Sciences
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• v.32 no.6
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• pp.896-903
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• 2019

Objective: Qianbei-Pockmarked goats are affected by a disorder locally referred to as 'Ruanguzheng Disorder', which is characterized by emaciation, lameness, muscular relaxation, stiffness of the extremities, and abnormal curvatures of the long bones. Our objective was to determine the relationship between the disorder and phosphorus deficiency. Methods: Tissue samples were collected from affected and healthy animals, while soil and herbage samples were collected from affected and healthy pastures. Biochemical parameters were determined using an automatic biochemical analyzer (OLYMPUS AU 640, Olympus Optical Co., Tokyo, Japan). Mineral contents in soil, forage, and tissue were determined using a Perkin-Elmer AAS5000 atomic absorption spectrophotometer (Perkin-Elmer, Norwalk, CT, USA). Results: The results showed that phosphorus contents in herbages from affected pastures were markedly lower than those from healthy areas (p<0.01), and the ratio of calcium to phosphorus in the affected herbages was 12.93:1. The phosphorus contents of wool, blood, tooth, and bone from affected animals were also markedly lower than those from healthy animals (p<0.01). Serum phosphorus values in affected animals were much lower than those in healthy animals, while serum alkaline phosphatase values from affected animals were markedly higher than those from healthy animals (p<0.01). Inorganic phosphorus values from affected animals were approximately half of that in the control group. Supplementation of disodium hydrogen phosphate prevented and cured the disorder. Conclusion: This study demonstrates that Ruanguzheng disorder in Qianbei-Pockmarked goats is primarily caused by phosphorus deficiencies in herbage due to fenced pastures and natural habitat fragmentation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.356-362
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• 2002

The molecular orientational dynamics of the nonlinear optical(NLO) side-chain polymer N-(4-nitrophenyl)-(L)-prolinol-poly (pphenylene terephthalates) have been studied using nonlinear optical responses as measured by second harmonic generation (SHG). A new pulsed corona poling is used to orient the NLO chromophores and the polymer segments into the noncentrosymmetric structure required to obtain the SHG signal. By corona poling of negative high voltage pulses with variable repetition rates (between 0.5 and 10 ㎑) at temperature between 25$^{\circ}C$ and 80$^{\circ}C$, well below and about the glass transition temperature 70$^{\circ}C$, the side-chain chromophores and the polymer chain contour rearrange themselves and create the domain structure observed by atomic force microscopy(AFM). The pulsed corona voltage enhances the orientational ordering of the NLO chromophores and also significantly influences the growth of SHG signal and the improved relaxation behavior after the poling field is removed, reducing the visible damage to the polymer film dramatically. This new pulsed corona poling experiment gave direct in situ evidence that the NLO chromophore and the polymer backbone undergo anisotropic rearrangement during the poling process.

• Nuclear Engineering and Technology
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• v.4 no.4
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• pp.306-321
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• 1972

Molecular reorientation in (NH$_4$)$_2$SO$_4$, has been studied by cold neutron scattering. For T=300$^{\circ}$K data, the isolated quasielastic spectra and form-factors at various scattering angles are compared with four reorientational models based on SKOLD theory. Front these, it is concluded that the NH$_4$ions are performing either 3-fold four axes or 2-fold three axes reorientation with $\tau$$_{c}$=2.0$\times$10$^{-11}$ sec. The temperature dependence of f. is studied over 100$^{\circ}$K-413$^{\circ}$K and for the high-temperature phase, the widths of composite spectra are compared with the results from NMR relaxation measurements. All the results have shown that the neutron scattering method is capable of giving detalis of the reorientational modes in solids and therefore some discussions are given on the application of this method. A study of the form-factor is applied for NH$_4$I (Phase I) by comparing the measurement with the calculation based on free rotation approximation and proposed a reorientation model of NH$_4$ ions in the octahedral potential cage with $\tau$$_{c}$$\leq$10$^{-12}$ sec. Also a brief theoretical prediction for the effect of reorientational motions on the inelastic spectrum is discussed.sed.

• Journal of the Korean Magnetics Society
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• v.18 no.6
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• pp.206-210
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• 2008

According to the recent reports the bulk bcc Rh is ferromagnetic with a small difference of energy compared to paramagnetic state. In this study, the electronic structure and magnetism for bcc Rh(001) surface are investigated by means of the all-electron full potential linearized augmented plane wave method within the generalized gradient approximation. It is found that the surface ferromagnetic state is preferable over the paramagnetic one. For unrelaxed system, the magnetic moment of the surface layer, $0.48{\mu}B$, is slightly increased comparing with the bulk value, $0.41{\mu}B$ while the value of the subsurface layer, $0.23{\mu}B$, is much smaller than the bulk value. The total energy and atomic force calculations show that the surface layer is relaxed downward and the subsurface layer moves upward to reduce the layer distance between the surface and subsurface layers by 7.0 %. The relaxation effect leads to weakening the surface magnetic properties. Specifically, the value of the magnetic moment of the surface atom is decreased to $0.36{\mu}B$. Since the spin polarization of the subsurface layer is only $0.14{\mu}B$, it is concluded that the bcc Rh(001) surface is rather weakly ferromagnetic.