• Title/Summary/Keyword: Atomic relaxation

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Time-delayed State Estimator for Linear Systems with Unknown Inputs

  • Jin Jaehyun;Tahk Min-Jea
    • International Journal of Control, Automation, and Systems
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    • v.3 no.1
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    • pp.117-121
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    • 2005
  • This paper deals with the state estimation of linear time-invariant discrete systems with unknown inputs. The forward sequences of the output are treated as additional outputs. In this case, the rank condition for designing the unknown input estimator is relaxed. The gain for minimal estimation error variance is presented, and a numerical example is given to verify the proposed unknown input estimator.

A Study on High Temperature Creep and Stress Relaxation Properties of Zr-4 (Zr-4의 고온 크리프 및 응력이완 특성에 관한 연구)

  • Oh, Sea-Kyoo;Park, Chung-Bae;Han, Sang-Deok
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.28 no.1
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    • pp.71-78
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    • 1992
  • Zr-4 used for a cladding and an end plug of reactor component has creep deformation under operation at high temperature. Creep is regarded as the time dependent deformation of a material under constant applied stress. Although the major source of the deformation of zirconium component in water-cooled reactors is irradiation creep, the thermal creep may give a rise to significant deformation in reactor component especially at relatively high temperatures and at various constant stresses, and therefore it must be predicted accurately. Stress relaxation is the time dependent change of stress at constant strain and it is a process related intimately to creep. In this paper, the creep behavior and stress relaxation of Zr-4 is examined at the temperature of 50$0^{\circ}C$ that is 40% of the absolute melting temperature of Zr-4 under the stress below yield stress and under the various constant strains. The results obtained are summarized as follows: 1) With an increase of stress, the steady state creep rate increases and the creep rupture time decreases. 2) The steady state creep rate $\varepsilon$(%/s) for the stress $\sigma$sub(c) (kgf/mm super(2)) of Zr-4 increases outstandingly. All the empirical equations computed for Zr-4 increases outstandingly. All the empirical equations computed for Zr-4 are in accord with Norton's model equation($\varepsilon$=K$\sigma$ sub(c) super (n)). The constants of materials computed are as follows: K=3.9881$\times$10 super(-5), n=1.9608 3) The rupture time T sub(r) (hr) decreases linearly with the increase of stress on the log-log scaled graph. The empirical equations computed for Zr-4 are in accord with Bailey's model equation (T sub(r)=K sub(1)$\sigma$sub(c) super(m)). The constants of materials computed are as follows: K sub(1)=1.2875$\times$10 super(16), m=-3.467 4) It seems clear that the strain could be quantitatively dependent on the high temperature creep properties such as creep stress, rupture time, steady state creep rate and total creep rate. It is found that these relationships are linear on the log-log graph. 5) In stress relaxation test, as the critical constant strain that can be allowed to the specimen is larger, stress relaxation becomes more rapid, and as the constant strain is smaller, the stress relaxation becomes slower.

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Finite element analysis of reactor internals with structural faults (기계적 결함이 있는 원자로 내부구조물의 유한요소해석)

  • Jung, Seung-Ho;Park, Jin-Seok;Kim, Tae-Ryong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.21 no.8
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    • pp.1270-1275
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    • 1997
  • This paper concerns with the finite element analysis of reactor internals with structural faults. For investigating the influence of hold-down spring faults on dynamic characteristics of CSB (core support barrel), reactor internals of Ulchin-1 nuclear power plant are modeled using finite element method and simulated with artificial defects on the hold-down springs. To prove the validity of the finite element models, the calculated natural frequencies of CSB in normal state are compared with those from the measurement results, which shows good agreement. According to results of finite element analysis, CSB beam mode natural frequency decreases by 4.5% in the case of 10% partial relaxation of hold-down springs, and decreases by 18.4% in the case of 20%. The range of shell mode natural frequency change is within 5.3%.

Thermal aging of Gr. 91 steel in supercritical thermal plant and its effect on structural integrity at elevated temperature

  • Min-Gu Won;Si-Hwa Jeong;Nam-Su Huh;Woo-Gon Kim;Hyeong-Yeon Lee
    • Nuclear Engineering and Technology
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    • v.56 no.1
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    • pp.1-8
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    • 2024
  • In this study, the influence of thermal aging on structural integrity is investigated for Gr. 91 steel. A commercial grade Gr. 91 steel is used for the virgin material, and service-exposed Gr. 91 steel is sampled from a steam pipe of a super critical plant. Time versus creep strain curves are obtained through creep tests with various stress levels at 600 ℃ for the virgin and service-exposed Gr. 91 steels, respectively. Based on the creep test results, the improved Omega model is characterized for describing the total creep strain curve for both Gr. 91 steels. The proposed parameters for creep deformation model are used for predicting the steady-state creep strain rate, creep rupture curve, and stress relaxation. Creep-fatigue damage is evaluated for the intermediate heat exchanger (IHX) in a large-scale sodium test facility of STELLA-2 by using creep deformation model with proposed creep parameters and creep rupture curve for both Gr. 91 steels. Based on the comparison results of creep fatigue damage for the virgin and service-exposed Gr. 91 steels, the thermal aging effect has been shown to be significant.

Thermal Annealing Effect on the Machining Damage for the Single Crystalline Silicon (단결정 실리콘의 기계적 손상에 대한 열처리 효과)

  • 정상훈;정성민;오한석;이홍림
    • Journal of the Korean Ceramic Society
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    • v.40 no.8
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    • pp.770-776
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    • 2003
  • #140 mesh and #600 mesh wheels were adopted to grind (111) and (100) oriented single crystalline silicon wafer and the grinding induced change of the surface integrity was investigated. For this purpose, microroughness, residual stress and phase transformation were analyzed for the ground surface. Microroughness was analyzed using AFM (Atomic Force Microscope) and crystal structure was analyzed using micro-Raman spectroscopy. The residual stress and phase transformation were also analyzed after thermal annealing in the air. As a result, microroughness of (111) wafer was larger than that of (100) wafer after grinding. It was observed using Raman spectrum that the silicon was transformed from diamond cubic Si-I to Si-III(body centered tetragonal) or Si-XII(rhombohedral). Residual stress relaxation was also shown in cavities which were produced after grinding. The thermal annealing was effective for the recovery of the silicon phase to the original phase and the residual stress relaxation.

Application of In Situ Measurement for Site Remediation and Final Status Survey of Decommissioning KRR Site

  • Hong, Sang Bum;Nam, Jong Soo;Choi, Yong Suk;Seo, Bum Kyoung;Moon, Jei Kwon
    • Journal of Radiation Protection and Research
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    • v.41 no.2
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    • pp.173-178
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    • 2016
  • Background: In situ gamma spectrometry has been used to measure environmental radiation, assumptions are usually made about the depth distribution of the radionuclides of interest in the soil. The main limitation of in situ gamma spectrometry lies in determining the depth distribution of radionuclides. The objective of this study is to develop a method for subsurface characterization by in situ measurement. Materials and Methods: The peak to valley method based on the ratio of counting rate between the photoelectric peak and Compton region was applied to identify the depth distribution. The peak to valley method could be applied to establish the relation between the spectrally derived coefficients (Q) with relaxation mass per unit area (${\beta}$) for various depth distribution in soil. The in situ measurement results were verified by MCNP simulation and calculated correlation equation. In order to compare the depth distributions and contamination levels in decommissioning KRR site, in situ measurement and sampling results were compared. Results and Discussion: The in situ measurement results and MCNP simulation results show a good correlation for laboratory measurement. The simulation relationship between Q and source burial for the source layers have exponential relationship for a variety depth distributions. We applied the peak to valley method to contaminated decommissioning KRR site to determine a depth distribution and initial activity without sampling. The observed results has a good correlation, relative error between in situ measurement with sampling result is around 7% for depth distribution and 4% for initial activity. Conclusion: In this study, the vertical activity distribution and initial activity of $^{137}Cs$ could be identifying directly through in situ measurement. Therefore, the peak to valley method demonstrated good potential for assessment of the residual radioactivity for site remediation in decommissioning and contaminated site.

Characteristics of Nano-dispersed Powder by Electric Explosion of Conductors

  • Kwon, Young-Soon;Kim, Ji-Soon;Moon, Jin-Soo;Kim, Hwan-Tae;Ilyin, Alexander-P;Rhee, Chang-Kyu;Rim, Geun-Hie
    • Journal of Powder Materials
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    • v.10 no.6
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    • pp.430-435
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    • 2003
  • The phenomenon of electrical explosion of conductors is considered in the context of the changes in the energy and structural states of the metal at the stages of energy delivery and relaxation of the primary products of EEC. It is shown that these changes are related to the forced interaction of an intense energy flux with matter and to the subsequent spontaneous relaxation processes. The characteristics of nano-sized metal powders are also discussed. The preferential gas media during EEC is Ar+$H_2$. An increase in $e/e_s$ (in the range of values studied) leads to a reduction in the metal content. For reactive powders obtained with high metal content, it is necessary to separate the SFAP fractions, which settled on the negative electrode of the electric filter.

Suppression of Macrostep Formation Using Damage Relaxation Process in Implanted SiC Wafer (SiC 웨이퍼의 이온 주입 손상 회복을 통한 Macrostep 형성 억제)

  • Song, G.H.;Kim, N.K.;Bahng, W.;Kim, S.C.;Seo, K.S.;Kim, E.D.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.346-349
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    • 2002
  • High Power and high dose ion implantation is essentially needed to make power MOSFET devices based on SiC wafers, because the diffusivities of the impurities such as Al, N, p, B in SiC crystal are very low. In addition, it is needed high temperature annealing for electrical activation of the implanted species. Due to the very high annealing temperature, the surface morphology after electrical activation annealing becomes very rough. We have found the different surface morphologies between implanted and unimplanted region. The unimplanted region showed smoother surface morphology It implies that the damage induced by high energy ion implantation affects the roughening mechanism. Some parts of Si-C bonding are broken in the damaged layer, s\ulcorner the surface migration and sublimation become easy. Therefore the macrostep formation will be promoted. N-type 4H-SiC wafers, which were Al ion implanted at acceleration energy ranged from 30kev to 360kev, were activated at 1600$^{\circ}C$ for 30min. The pre-activation annealing for damage relaxation was performed at 1100-1500$^{\circ}C$ for 30min. The surface morphologies of pre-activation annealed and activation annealed were characterized by atomic force microscopy(AFM).

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Studies of the Organic Molecules Dissociative Surface Ionization in the Mass-Spectrometric Surface Ionization Method

  • Ilkhomjan Saydumarov;Dilshadbek Usmanov
    • Mass Spectrometry Letters
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    • v.15 no.1
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    • pp.54-61
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    • 2024
  • An improved voltage modulation method (VMM) was used to control the heat release and adsorption properties of the adsorbent. In this work, the voltage and flux modulation methods were considered under unified experimental conditions of dissociative surface ionization (SI) of polyatomic organic molecules, the criteria were found when under VMM conditions the current relaxation of SI carries information about the kinetic properties of thermal desorption of ionizable dissociation particles arriving on the surface of polyatomic molecules. Conditions were found under which the relaxation of the ionic current in the flux modulation method is determined by the kinetics of the heterogeneous dissociation reaction of the original polyatomic molecules. The values of the thermal desorption rate constant K+ and the activation energy E+ obtained with VMM for desorption of (CH3)2NCH+2 ions with m/z 58 by adsorption of imipramine and amitriptyline molecules agree well with each other and with the results for the desorption of the same ions by adsorption of other molecules. This confirms one of the basic conditions for the equilibrium process SI - the a degree (β coefficient) of the same particles SI on the same emitter surface is the same and does not depend on the way these particles are formed on the emitter surface.