• Journal of Radiation Industry
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• v.4 no.4
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• pp.335-339
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• 2010

In this study, the surface of polyimide (PI) films was modified using ion implantation to enhance its adhesion to a deposited copper (Cu) layer. The surfaces of the PI films were implanted with 150 keV $Xe^+$ ions at fluences varying from $1{\times}10^{14}$ to $1{\time}10^{16}ions\;cm^{-2}$. The Cu layers were then deposited on the implanted PI. The surface properties of the implanted PI film were investigated based on the contact angle measurements, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Furthermore, the adhesive strength between the deposited Cu layer and PI film was estimated through a scratch test using a nanoindenter. As a result, the surface environment of the PI film was changed by the ion implantation, which could have a significant effect on the adhesion between the deposited Cu layer and the PI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.398-398
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• 2007

Most recently, the Liquid Crystal (LC) aligning capabilities achieved by ion beam exposure on the diamond-like carbon (DLC) thin film layer have been successfully studied. The DLC thin films have a high mechanical hardness, a high electrical resistance, optical transparency and chemical inertness. Nitrogen doped Diamond Like Carbon (NDLC) thin films exhibit properties similar to those of the DLC films and better thermal stability than the DLC films because C:N bonding in the NDLC film is stronger against thermal stress than C:H bonding in the DLC thin films. Moreover, our research group has already studied ion beam alignment method using the NDLC thin films. The nematic liquid crystal (NLC) alignment effects treated on the SiNx thin film layers using ion beam irradiation for three kinds of N rations was successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition (PECVD) and used three kinds of N rations. In order to characterize the films, the atomic force microscopy (AFM) image was observed. The good LC aligning capabilities treated on the SiNx thin film with ion beam exposure for all N rations can be achieved. The low pretilt angles for a NLC treated on the SiNx thin film with ion beam irradiation were measure.

• Journal of Radiation Industry
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• v.4 no.4
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• pp.359-364
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• 2010

PVDF-HFP (binder)/silylated alumina (inorganic particle)-coated PE (polyethylene) separators were with various compositions of binder and inorganic particle were prepared by a dip-coating process with humidity control (R.H. 25% and 50%) using electron beam irradiation. The morphology of the coated PVDF-$HFP/Al_2O_3$ layer with various compositions of PVDF-HFP and $Al_2O_3$, and humidity condition was found to be an important factor in determining ionic conductivity of the prepared separators. The PVDF-$HFP/Al_2O_3$ (5/5)-coated PE separator prepared at R.H. 50% followed by electron beam irradiation at 200 kGy was applied for lithium-ion polymer battery and the cell test results showed improved high-rate discharge performance and better cyclic stability compared to the cells with the bare PE and the PVDF-HFP-coated PE separators.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.935-940
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• 1998

The Korea Superconducting Tokamak Research (KSTAR) tokamak will have 6 MW of radio-frequency (rf) heating in the ion cyclotron range of frequencies (ICRF). The response of the antenna to the heat loads is analyzed and the resulting stresses in the Faraday shield during the normal operation is calculated. Various heat loading conditions including in the analyzes are the heat loads from the plasma, the ripple-trapped beam particles and the rf loss.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.951-956
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• 1998

The beam extraction system for the KOMAC[1] (Korea Multi-purpose Accelerator Complex) project is to be designed to partially extract H￣ beam at both 100 and 260 MeV This paper describes a simulation study of charge changing extraction with a stripper magnet and a possible design of a H$^{0}$ extractor by utilizing the simulation study The method consists of converting the negative hydrogen (H￣) ion beam from the linac to a chosen intensity (0-100%) of neutral hydrogen (H$^{0}$ ) beam having an acceptable omittance and drifting it directly onto a stripper foil followed by a downstream beamline.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.77-81
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• 2011

Aluminum nitride (AlN) thin films were prepared by using nitrogen ion beam assisted reactive radio frequency (RF) magnetron sputtering on the glass substrates without intentional substrate heating. After deposition, the effect of nitrogen ion beam energy on the structural and optical properties of AlN films were investigated by x-ray diffraction (XRD), atomic force microscope (AFM) and UV-Vis. spectrophotometer, respectively. AlN films deposited with $N^+$ ion irradiation at 100 eV show the higher (002) peak intensity in XRD pattern than other films. It means that $N^+$ ion energy of 100 eV is the favorable condition for low temperature crystallization. AFM images also show that surface average roughness is increased from 1.5 to 9.6 nm with $N^+$ ion energy in this study. In an optical observation, AlN films which deposited by $N^+$ ion beam energy of 100 eV show the higher transmittance than that of the films prepared with the other $N^+$ ion beam conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.218.2-218.2
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• 2014

그래핀은 높은 전기 전도도와 열전도도, 기계적 강도를 가지고 있고 동시에 높은 전자이동도($200,000cm^2{\cdot}V{\cdot}^1{\cdot}s{\cdot}^1$) 특성을 갖는 물질로써 차세대 소재로 각광받고 있다. 하지만 그래핀을 소자에 응용하기 위해서는 전사공정과 lithography 공정 과정에서 발생되는 PMMA(Poly methyl methacrylate) residue를 완벽하게 제거해야 하는 문제점이 있다. 특히, lithography 공정 중 완벽하게 PMMA residue 가 제거되지 않고 잔류해 있을 경우에 소자의 life time, performance에 악영향을 준다는 보고가 있다. 이와같은 문제를 해결하기 위해 화학적 cleaning, 열처리를 통한 cleaning, 전류 인가에 의한 cleaning과 같은 방법들을 이용하여 그래핀의 PMMA residue를 제거하는 공정들이 보고되고 있지만, 화학적 cleaning 방법의 경우 chloroform 이라는 독성물질 사용으로 인해 산업적으로 응용이 어렵고, 열처리 방법은 전극 등의 금속이 $200^{\circ}C$ 이상의 높은 온도에서 장시간 노출될 경우 쉽게 손상을 입으며, 전류 인가에 의한 cleaning 방법은 국부적으로만 효과를 볼 수 있기 때문에 lithography 공정 후 PMMA residue를 효과적으로 제거하기에는 한계를 보이고 있다. 본 연구에서는 Ar을 이용하는 Ion beam 시스템을 통해 beam energy를 제어함으로써 PMMA residue를 효과적으로 제거하는 연구를 진행하였다. 최적화된 플라즈마 발생 조건을 찾기 위해 QMS(Quadrupole Mass Spectrometer)를 이용하여 입사하는 ion energy와 flux 양을 컨트롤 하였고, 250 W에서 최적화된 ion energy distribution 영역이 존재한다는 것을 확인할 수 있었다. 또한, 25 Gauss 정도의 electro-magnetic field를 이용하여 Ar의 ion energy를 10 eV 이하로 낮추어 damage를 최소화함으로써 효과적으로 그래핀을 cleaning 할 수 있었다. Cleaning과정에서 ion bombardment에 의해 발생한 damage는 $250^{\circ}C$에서 6시간 동안 annealing 공정을 거치면서 회복되는 것을 Raman spectroscopy의 D peak ($1335cm{\cdot}^1$) / G peak ($1572cm{\cdot}^1$) ratio 로 확인할 수 있었고, PMMA residue의 cleaning 여부는 G peak ($1580cm{\cdot}^1$)의 blue shift와 2D peak ($2670cm{\cdot}^1$)의 red shift를 통해 확인하였다. 그리고 AFM (Atomic Force Microscopy)을 이용하여 cleaning 공정과정에서 RMS roughness가 4.99 nm에서 2.01 nm로 감소하는 것을 관찰하였다. 마지막으로, PMMA residue의 cleaning 정도를 정량적으로 분석하기 위해 XPS (X-ray Photoelectron Spectroscopy)를 이용하여 sp2 C-C bonding이 74.96%에서 87.66%로 증가함을 확인을 할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.355-358
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• 2016

We present the alignment characteristics of LC (liquid crystal) molecules on solution-derived HLO (hafnium lanthanum oxide) films fabricated using IB (ion-beam) irradiation. We then demonstrated that LC molecules can be homogeneously and uniformly aligned on the HLO film irradiated at an IB incident energy of 1.2 keV. Physicochemical analysis methods such as atomic force microscopy and X-ray photoelectron spectroscopy were used to verify the LC alignment mechanism on the IB-irradiated HLO film. In addition, the electro-optical performance of a TN (twisted-nematic) cell fabricated using the IB-irradiated HLO film exhibited characteristics superior to those of the conventional TN cell fabricated using a rubbed polyimide layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.385-385
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• 2011

Ion beam Sputtering (IBS)를 이용한 물질 표면의 pattern 형성은 물리적 변수 조절로 손쉽게 nano structure의 크기와 형태를 조절할 수 있어 관심을 받고 있다. 본 연구발표에서는 massless Dirac Fermion behavior로 인한 highly carrier mobility와 같은 특성으로 인해 차세대 device material로 각광받고 있는 Graphene의 layered compound (층상구조) 형태인 HOPG (Highly Ordered Pyrolysis Graphite)에 IBS (Ion beam Sputtering)를 이용해 nano structure가 형성 가능함을 보이고 그 특징에 대해 소개하려 한다. HOPG(0001)를 Sputter 했을 때, 표면에 잘 정렬된 nano ripple pattern이 형성 가능함을 확인하였으며 sputter하는 시간을 변화하면 약 10 nm에서 80 nm까지 wavelength를 조절할 수 있다. 또한 이전의 IBS를 이용한 연구들에서 확인할 수 있는 다른 물질의 곧게 뻗은 nano ripple과는 다르게 ripple의 끝에 nano swab이 생기는 것을 AFM (Atomic Force Microscope)으로 확인할 수 있었다. 이러한 Graphite에서만 나타나는 Sputter에 의한 표면의 변화의 원인을 규명하고자 Sputter가 지속됨에 따라 나타나는 mopology의 roughness와 wavelength의 시간에 따른 dynamic scaling behavior를 확인하였고 그 얼개를 알기 위해 simulation을 수행 하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.334-339
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• 1998

$Bi_2Sr_2CuO_x$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of $5.0\times10^{-5}$ Torr is supplied with ultraviolent light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.