• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.602-607
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• 2004

This paper describes the characteristics of Ru-Zr alloy gate electrodes deposited by co-sputtering. The various atomic composition was made possible by controlling sputtering power of Ru and Zr. Thermal stability was examined through 600 and 700 $^{\circ}C$ RTA annealing. Variation of oxide thickness and X-ray diffraction(XRD) pattern after annealing were employed to determine the reaction at interface. Low and relatively stable sheet resistances were observed for Ru-Zr alloy after annealing. Electrical properties of alloy film were measured from MOS capacitor and specific atomic composition of Zr and Ru was found to yield compatible work function for nMOS. Ru-Zr alloy was stable up to $700^{\circ}C$ while maintaining appropriate work function and oxide thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.310.2-310.2
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• 2013

For enhancement of dye-sensitized solar cell performance, TiO2 blocking layer has been used to prevent recombination between electron and hole at the conducting oxide and electrolyte interface. In solid state dye-sensitized solar cells, it is necessary to fabricate pin-hole free TiO2 blocking layer. In this work, we deposited the TiO2 blocking layer on conducting oxide by atomic layer deposition and compared the efficiency. To compare the efficiency, we fabricate solid state dye-sensitized solar cell with using CuSCN as hole transport material. We see the efficiency improve with 40nm TiO2 blocking layer and the TiO2 blocking layer morphology was characterized by SEM. Also, we used this blocking layer in TiO2/Sb2S3/ CuSCN solar cell.

• Journal of the Korean Magnetics Society
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• v.6 no.3
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• pp.170-173
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• 1996

Co-Zr multilayered thin films were prepared by three-gun magnetron sputtering system and low temperature arrorphization was attempted. According to thin film X-ray and cross-sectional TEM analysis, it has been found that zirconium layer is arrorphized by diffusion of cobalt and the amorphization rate at the upper interface is two or three times faster than that at the lower interface of the zirconium layers. This new phenomenon is explained in terms of atomic mixing during sputtering.

• Journal of Adhesion and Interface
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• v.6 no.1
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• pp.7-10
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• 2005

Condensation control of nano-particles has become important in order to fabricate minute condensed structures. In this study, we focus our attention on condensation mechanism of polymer aggregates in a resist film. The polymer aggregate is structural component of a resist material which is used in lithography process. The condensation nature of polymer aggregates in the resist film surface is observed by using atomic force microscope (AFM). By using the AFM, the condensation of polymer aggregates can be observed clearly. The condensation of polymer aggregate strongly affects to precise fabrication of resist pattern below 100nm size. The interaction force among polymer aggregates can be analyzed based on Derjaguin approximation. We also discuss about condensation nature of polymer aggregates in the resist film surface with the help of micro sphere model.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1415-1418
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• 2007

Electronic and structural properties of the interfaces formed by pentacene deposited on a polymer-based dielectrics are investigated by electron spectroscopy, atomic force microscopy, and water contact angle measurement. There is strong influence of surface treatment of the polymer dielectrics on the energy level alignment and the surface topography upon the pentacene deposition.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10b
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• pp.1527-1530
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• 1996

Telerobot system is being developed for the application to nuclear power plants by Korea Atomic Energy Research Institute. Human-machine interaction and interface are very important elements of telerobotic systems. The main purpose of this study is developing a control system based on 3-D graphic techniques for the easy user interface and realistic visual I information supply. This system possesses the abilities for (1) virtual work, environment modelling and simulation, (2) kinematic animation include redundant behavior (3) interfacing with a real robot system, (4) transformation between real and virtual mode within the same graphics system. This system is especially focused on enhancing the overall efficiency and reliably of nozzle dam installation task inside water chamber of steam generator in nuclear power plant.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.59-64
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• 1996

InSb MIS devices prepared by remote PECVD SiO$_{2}$ were fabricated. The SiO$_{2}$ films on InSb were deposited at atemperature range of 67~190$^{\circ}$C. The effects of deposition temperature on the structural characteristics of the SiO$_{2}$ films evaluated Auger electron spectroscopy showed that atomic raito of silicon to oxygen was 0.5 and composition toms were distributed uniformaly throuout the oxide film. The transition region is about 100$\AA$ for SiO$_{2}$/InSb interface. The leakage current density at 1MV/cm and the breakdownelectric field of the MiS device using SiO$_{2}$ film deposited at 105$^{\circ}$C were about 22 nA/cm$^{2}$ and 3.5MV/cm, respectively. The interface-state density at mid-bandgap extracted from 1 MHz high frequency C-V measurement was about 2X10$^{11}$ cm$^{-2}$eV$^{-1}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1122-1125
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• 2006

The TFT performances were enhanced and stabilized by plasma oxidation of the polycrystalline Si surface prior to the plasma enhanced atomic layer deposition of $Al_2O_3$ gate dielectric film. We attribute the improvement to the formation of a high quality oxide interface layer between the gate dielectric film and the poly-Si film. The interface oxide has a predominant effect on the TFT's characteristics, and is regulated by the gap distance between the electrode and the polycrystalline Si surface.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1061-1064
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• 2003

In this paper, we deposited A1$_2$O$_3$ thin film using atomic layer deposition(ALD) method on Ti and fabricated metal-insulator-metal(MIM) capacitor. In the result of this study, the typical deposition rate was about 1.12$\AA$/cycle. About 30 nm of Ti was consumed during deposition and TiO$_{x}$ was formed at the interface of A1$_2$O$_3$ and Ti. Its surface roughness was 1.54nm. The leakage current density was 1.5 nA/$\textrm{cm}^2$. The temperature coefficient of capacitance(TCC) of MIM capacitor was 41 ppm/$^{\circ}C$ at 1MHz and 100 ppm/$^{\circ}C$ at 100 kHz.z.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.169-169
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• 2017

Due to key roles for the electrochemical stability and charge capacity the solid-electrolyte interphase (SEI) has been extensively studied in anodes of a Li-ion battery cell. There is, however, few of investigation for cathodes. Using first-principles based calculations we describe atomic-level process of the SEI layer formation at the interface of a carbonate electrolyte and $LiMn_2O_4$ spinel cathode. Furthermore, using beyond the conventional density functional theory (DFT+U) calculations we examine the work function of the cathode and frontier orbitals of the electrolyte. Based on the results we propose that proton transfer at the interface is an essential mechanism initiating the SEI layer formation in the $LiMn_2O_4$. Our results can guide a design concept for stable and high capacity Li-ion battery cell through screening an optimum electrolyte fine-tuned energy band alignment for a given cathode.